ACM Research Announces Major Upgrades to Its Ultra C wb Wet Bench Cleaning Tool for Advanced Chip Manufacturing
ACM Research (NASDAQ: ACMR) has announced significant upgrades to its Ultra C wb wet bench cleaning tool for advanced semiconductor manufacturing. The enhanced system features a patent-pending nitrogen (N2) bubbling technology that improves wet etching uniformity by more than 50% compared to conventional batch processes.
The upgraded tool includes enhanced etching uniformity, improved particle removal performance, and expanded process capabilities compatible with various chemical solutions. The technology is particularly valuable for manufacturing 3D DRAM, 3D logic, and 500+ layer 3D NAND devices. The N2 bubbling technology can also be applied to ACM's Ultra C Tahoe platform for future process requirements.
ACM Research (NASDAQ: ACMR) ha annunciato importanti miglioramenti al suo strumento di pulizia a bagnomaria Ultra C wb per la produzione avanzata di semiconduttori. Il sistema potenziato presenta una tecnologia brevettata in attesa di brevetto con bolle di azoto (N2) che migliora l'uniformità dell'incisione a umido di oltre il 50% rispetto ai processi batch tradizionali.
Lo strumento aggiornato offre una maggiore uniformità di incisione, una migliore rimozione delle particelle e capacità di processo ampliate, compatibili con diverse soluzioni chimiche. Questa tecnologia è particolarmente utile nella produzione di 3D DRAM, 3D logic e dispositivi 3D NAND con oltre 500 strati. La tecnologia a bolle di N2 può inoltre essere applicata alla piattaforma Ultra C Tahoe di ACM per esigenze di processo future.
ACM Research (NASDAQ: ACMR) ha anunciado mejoras significativas en su herramienta de limpieza en húmedo Ultra C wb para la fabricación avanzada de semiconductores. El sistema mejorado cuenta con una tecnología de burbujeo de nitrógeno (N2) pendiente de patente que mejora la uniformidad del grabado húmedo en más de un 50% en comparación con los procesos por lotes convencionales.
La herramienta actualizada incluye una mayor uniformidad de grabado, mejor rendimiento en la eliminación de partículas y capacidades de proceso ampliadas compatibles con diversas soluciones químicas. Esta tecnología es especialmente valiosa para la fabricación de 3D DRAM, lógica 3D y dispositivos 3D NAND con más de 500 capas. La tecnología de burbujeo de N2 también puede aplicarse a la plataforma Ultra C Tahoe de ACM para futuros requerimientos de proceso.
ACM Research (NASDAQ: ACMR)는 첨단 반도체 제조용 Ultra C wb 습식 세정 장비에 대한 중요한 업그레이드를 발표했습니다. 향상된 시스템은 특허 출원 중인 질소(N2) 버블링 기술을 적용하여 기존 배치 공정 대비 습식 에칭 균일도를 50% 이상 개선했습니다.
업그레이드된 장비는 향상된 에칭 균일도, 개선된 입자 제거 성능, 다양한 화학 용액과 호환되는 확장된 공정 기능을 포함합니다. 이 기술은 특히 3D DRAM, 3D 로직, 500층 이상 3D NAND 장치 제조에 유용합니다. N2 버블링 기술은 향후 공정 요구에 맞춰 ACM의 Ultra C Tahoe 플랫폼에도 적용할 수 있습니다.
ACM Research (NASDAQ : ACMR) a annoncé des améliorations majeures de son outil de nettoyage humide Ultra C wb pour la fabrication avancée de semi-conducteurs. Le système amélioré intègre une technologie de bullage à l'azote (N2) en instance de brevet qui améliore l'uniformité de la gravure humide de plus de 50% par rapport aux procédés par lots conventionnels.
L'outil mis à jour offre une meilleure uniformité d'attaque, une performance accrue dans l'élimination des particules et des capacités de traitement étendues compatibles avec diverses solutions chimiques. Cette technologie est particulièrement précieuse pour la fabrication de 3D DRAM, 3D logique et dispositifs 3D NAND à plus de 500 couches. La technologie de bullage N2 peut également être appliquée à la plateforme Ultra C Tahoe d'ACM pour les besoins futurs en procédés.
ACM Research (NASDAQ: ACMR) hat bedeutende Verbesserungen an seinem Ultra C wb Nassreinigungsgerät für die fortschrittliche Halbleiterfertigung angekündigt. Das verbesserte System verfügt über eine patentanmeldete Stickstoff-(N2)-Blubbertechnologie, die die Gleichmäßigkeit des Nassätzens um mehr als 50% gegenüber herkömmlichen Chargenprozessen verbessert.
Das aufgerüstete Gerät bietet verbesserte Ätzungsgleichmäßigkeit, eine bessere Partikelentfernung und erweiterte Prozessfähigkeiten, die mit verschiedenen chemischen Lösungen kompatibel sind. Die Technologie ist besonders wertvoll für die Herstellung von 3D DRAM, 3D-Logik und 3D NAND-Geräten mit über 500 Schichten. Die N2-Blubbertechnologie kann auch auf ACMs Ultra C Tahoe Plattform für zukünftige Prozessanforderungen angewendet werden.
- New N2 bubbling technology improves wet etching uniformity by more than 50%
- Technology is qualified for three layers of advanced-node processes
- Enhanced cleaning capabilities for organic residue removal in advanced-node processes
- Compatible with multiple chemical solutions and expandable to additional applications
- Cost-effective batch processing with increased efficiency and lower chemical consumption
- None.
Insights
ACM's new nitrogen bubbling technology significantly improves wet etching performance for advanced nodes, strengthening its competitive position.
ACM Research has introduced a patent-pending nitrogen bubbling technology for its Ultra C wb wet bench cleaning tool that addresses critical challenges in advanced semiconductor manufacturing. This innovation specifically tackles poor wet etching uniformity and by-product regrowth issues in high aspect ratio structures when using phosphoric acid—problems that become increasingly significant at advanced nodes.
The technical improvements are substantial: the N₂ bubbling technique enhances transport efficiency of chemicals and promotes uniformity in temperature, concentration, and flow velocity. Most impressively, it improves within-wafer and wafer-to-wafer etching uniformity by more than 50% compared to conventional batch processes. This advancement has particular relevance for manufacturing complex 3D architectures like 3D DRAM, 3D logic, and 500+ layer 3D NAND devices.
The upgraded tool has already been qualified for three critical process layers in advanced node manufacturing, including stack silicon nitride removal, channel hole polysilicon etch back, and gate line tungsten recess. It's compatible with multiple chemical solutions including phosphoric acid, H4 etchant, TMAH, SC1, and SiGe etching solutions. Importantly, this technology can also be applied to ACM's Ultra C Tahoe platform, expanding its application potential.
This development strengthens ACM's position in the batch processing segment of wet cleaning, which remains attractive to manufacturers due to its cost-effectiveness, efficiency benefits, and lower chemical consumption compared to single-wafer approaches. The advancement directly addresses the increasingly complex cleaning challenges that emerge as semiconductor manufacturers push toward more advanced process nodes with intricate 3D architectures.
ACM’s patent-pending nitrogen bubbling technique provides significant wet etching uniformity improvement and enhanced cleaning performance
FREMONT, Calif., July 24, 2025 (GLOBE NEWSWIRE) -- ACM Research, Inc. (“ACM”) (NASDAQ: ACMR), a leading supplier of wafer and panel processing solutions for semiconductor and advanced packaging applications, today announced major upgrades to its Ultra C wb cleaning tool. These new enhancements are designed to meet the demanding technical requirements of advanced-node manufacturing processes.
The upgraded Ultra C wb features a patent-pending nitrogen (N2) bubbling technology to solve poor wet etching uniformity and by-product regrowth. These issues frequently appear in conventional wet bench processes of phosphoric acid in high aspect ratio trenches and via structures in advanced-node processes. ACM’s patent-pending N2 bubbling technique enhances the transport efficiency of phosphoric acid and promotes the uniformity of temperature, concentration and flow velocity in wet etching bath. The improved mass transfer efficiency of the wet etching process avoids by-product accumulation in wafer micro-structures to prevent regrowth. This technology holds significant application potential in the wet etching process for manufacturing 3D DRAM, 3D logic and 500+ layer 3D NAND devices.
“With performance a top priority, ACM has enhanced its Ultra C wb tool to deliver improved results by integrating the N2 bubbling technique,” said ACM’s President and Chief Executive Officer, Dr. David Wang. “Batch processing remains a vital component of the wet processing market, offering advantages such as cost-effectiveness, increased efficiency, and lower chemical consumption compared to single-wafer wet cleaning.”
New Features and Benefits of the Upgraded Ultra C wb Tool:
- Enhanced Etching Uniformity: Compared to conventional batch processes for wet cleaning, the Ultra C wb platform is equipped with the N2 bubbling technique, improving within-wafer and wafer-to-wafer wet etching uniformity by more than
50% . - Enhanced Particle Removal Performance: The Ultra C wb platform’s advanced cleaning capabilities have been proven in organic residue removal of special phosphoric acid additives in advanced-node processes.
- Expanded Process Capabilities: The upgraded bench module is qualified for three layers of advanced-node processes, including: stack silicon nitride removal, channel hole polysilicon etch back and gate line tungsten recess. It is compatible with a variety of chemical solutions, such as phosphoric acid, H4 etchant (a mixed acid solution typically used for metal film etching), tetramethylammonium hydroxide (TMAH), standard clean 1 (SC1) and silicon-germanium (SiGe) etching solution, etc. Additional layers and applications are currently in development at the customer site.
- Proprietary Design: The nitrogen bubbling technology designs in the patent application generate large-size bubbles with good uniformity, while the bubble density can be precisely controlled. The N₂ bubbling core technology can be applied to ACM’s Ultra C Tahoe (single-wafer and bench combined cleaning tool) platform, effectively addressing customers’ future process requirements.
Forward-Looking Statements
Certain statements contained in this press release are not historical facts and may be forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995. Words such as “plans,” “expects,” “believes,” “anticipates,” “designed,” and similar words are intended to identify forward-looking statements. Forward-looking statements are based on ACM management’s current expectations and beliefs, and involve a number of risks and uncertainties that are difficult to predict and that could cause actual results to differ materially from those stated or implied by the forward-looking statements. A description of certain of these risks, uncertainties and other matters can be found in filings ACM makes with the U.S. Securities and Exchange Commission, all of which are available at www.sec.gov. Because forward-looking statements involve risks and uncertainties, actual results and events may differ materially from results and events currently expected by ACM. Readers are cautioned not to place undue reliance on these forward-looking statements, which speak only as of the date hereof. ACM undertakes no obligation to publicly update these forward-looking statements to reflect events or circumstances that occur after the date hereof or to reflect any change in its expectations with regard to these forward-looking statements or the occurrence of unanticipated events.
About ACM Research, Inc.
ACM develops, manufactures and sells semiconductor process equipment spanning cleaning, electroplating, stress-free polishing, vertical furnace processes, track, PECVD, and wafer- and panel-level packaging tools, enabling advanced and semi-critical semiconductor device manufacturing. ACM is committed to delivering customized, high-performance, cost-effective process solutions that semiconductor manufacturers can use in numerous manufacturing steps to improve productivity and product yield. For more information, visit www.acmr.com.
© ACM Research, Inc. ULTRA C and the ACM Research logo are trademarks of ACM Research, Inc. For convenience, these trademarks appear in this press release without ™ symbols, but that practice does not mean ACM will not assert, to the fullest extent under applicable law, its rights to such trademarks. All other trademarks are the property of their respective owners.
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