Lam Research Establishes 28nm Pitch in High-Resolution Patterning Through Dry Photoresist Technology
Rhea-AI Summary
Lam Research (LRCX) has achieved a significant breakthrough in semiconductor manufacturing with its dry photoresist technology being qualified for 28nm pitch back end of line logic at 2nm and below by imec. The technology enhances extreme ultraviolet (EUV) lithography's resolution, productivity, and yield in next-generation semiconductor device production.
The dry resist technology provides key advantages including low-defect patterning, improved EUV sensitivity, and enhanced resolution. When paired with low NA EUV scanner at imec, the process is also extendible to high NA EUV scanner applications. Notably, the technology offers substantial sustainability benefits, consuming less energy and 5-10 times fewer raw materials compared to traditional wet chemical resist processes.
Positive
- Successful qualification of dry resist technology for 28nm pitch BEOL logic at 2nm and below
- Technology demonstrates superior performance with low defectivity at competitive costs
- Reduces raw material consumption by 5-10 times compared to wet chemical processes
- Enhanced EUV sensitivity and resolution improving cost, performance and yield
Negative
- None.
Insights
This breakthrough in dry photoresist technology represents a significant advancement in semiconductor manufacturing capabilities. Achieving 28nm pitch in BEOL logic at 2nm and below is a critical milestone that addresses one of the industry's most pressing challenges. The technology's qualification by imec, a highly respected research institution, validates its commercial viability.
The development impacts semiconductor fabrication in three important ways: First, it enhances EUV lithography efficiency, potentially reducing production costs through improved exposure dose management. Second, the demonstrated low defectivity at 28nm pitch enables higher yield rates, which directly affects profit margins. Third, the technology's compatibility with both current low NA and future high NA EUV scanners ensures longevity and scalability for next-generation chip production.
For context, achieving 28nm pitch with acceptable defectivity levels has been a significant hurdle in semiconductor scaling. Traditional wet resist processes struggle with pattern collapse and resolution limitations at these dimensions. Lam's dry resist technology effectively addresses these challenges while offering substantial sustainability benefits through reduced material consumption.
This technological advancement strengthens Lam Research's competitive position in the critical EUV ecosystem. The semiconductor equipment market for advanced nodes is experiencing robust growth and this innovation directly addresses the increasing demand for more sophisticated patterning solutions. The qualification by imec typically precedes adoption by major foundries, suggesting potential revenue growth opportunities in the next 12-24 months.
The technology's dual advantage of improving performance while reducing material consumption by 5-10x presents a compelling value proposition for semiconductor manufacturers facing rising costs and environmental pressures. This could accelerate adoption rates among major foundries and IDMs, potentially expanding Lam's market share in the advanced patterning segment.
Furthermore, the compatibility with future high NA EUV systems positions Lam favorably for the next generation of semiconductor manufacturing, where equipment suppliers with proven advanced node capabilities will likely capture premium pricing power.
"Lam's dry photoresist technology provides unparalleled low-defectivity, high-resolution patterning," said Vahid Vahedi, chief technology and sustainability officer at Lam Research. "We are excited to offer this technology to imec and its partners as a critical process in the design and manufacturing of leading-edge semiconductor devices."
As chipmakers move to advanced technology nodes, transistor features and pitch sizes continue to get smaller. Ambitious next-generation device roadmaps require direct-print 28nm pitch BEOL to enable scaling. Small pitch size can often result in poor pattern resolution, but Lam's dry resist technology helps optimize patterning by overcoming the well-known tradeoff between EUV exposure dose (cost) and defectivity (yield).
At imec, Lam's 28nm pitch dry resist processes are paired with a low NA EUV scanner, and extendible to a high NA EUV scanner. They enhance EUV sensitivity and the resolution of each wafer pass — improving cost, performance and yield. In addition, dry resist offers key sustainability benefits by consuming less energy and five to ten times less raw materials than existing wet chemical resist processes. Lam's technology outperforms wet resist materials with exceptionally low defectivity at competitive cost.
"Through joint research and development, imec acts as a neutral partner for equipment manufacturers, demonstrating feasibility of new materials and equipment, supporting process development, and providing integrated device manufacturers and foundries early access to innovative processes that accelerate their manufacturing roadmaps," said Steven Scheer, vice president of process technology at imec. "Lam's dry resist achieves excellent defectivity and fidelity at competitive dose."
Additional Media Resources:
- Press release: Lam Research Unveils Technology Breakthrough for EUV Lithography
- Blog: Why New Photoresist Technology Is Critical
About Lam Research
Lam Research Corporation is a global supplier of innovative wafer fabrication equipment and services to the semiconductor industry. Lam's equipment and services allow customers to build smaller and better performing devices. In fact, today, nearly every advanced chip is built with Lam technology. We combine superior systems engineering, technology leadership, and a strong values-based culture, with an unwavering commitment to our customers. Lam Research (Nasdaq: LRCX) is a FORTUNE 500® company headquartered in
Caution Regarding Forward-Looking Statements
Statements made in this press release that are not of historical fact are forward-looking statements and are subject to the safe harbor provisions created by the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to, but are not limited to: industry and market trends and expectations, and product performance, including sustainability benefits. Some factors that may affect these forward-looking statements include: trade regulations, export controls, trade disputes, and other geopolitical tensions may inhibit our ability to sell our products; business, political and/or regulatory conditions in the consumer electronics industry, the semiconductor industry and the overall economy may deteriorate or change; the actions of our customers and competitors may be inconsistent with our expectations; supply chain cost increases and other inflationary pressures have impacted and may continue to impact our profitability; supply chain disruptions or manufacturing capacity constraints may limit our ability to manufacture and sell our products; and natural and human-caused disasters, disease outbreaks, war, terrorism, political or governmental unrest or instability, or other events beyond our control may impact our operations and revenue in affected areas; as well as the other risks and uncertainties that are described in the documents filed or furnished by us with the Securities and Exchange Commission, including specifically the Risk Factors described in our annual report on Form 10-K for the fiscal year ended June 30, 2024 and our quarterly report on Form 10-Q for the fiscal quarter ended September 29, 2024. These uncertainties and changes could materially affect the forward-looking statements and cause actual results to vary from expectations in a material way. The Company undertakes no obligation to update the information or statements made in this release.
Company Contacts:
Allison L. Parker
Media Relations
(510) 572-9324
publicrelations@lamresearch.com
Ram Ganesh
Investor Relations
(510) 572-1615
investor.relations@lamresearch.com
Source: Lam Research Corporation, (Nasdaq: LRCX)
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SOURCE Lam Research Corporation
FAQ
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