Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter

Microchip Technology (MCHP) introduced the POL-05-20S-T, a radiation-tolerant power converter designed for space processing applications and available in production quantities.

Rhea-AI Summary

Microchip Technology (MCHP) introduced the POL-05-20S-T, a radiation-tolerant power converter designed for space processing applications and available in production quantities. The device uses gallium nitride power components and delivers up to 20A of output current in a 25g surface-mount package. Its input range is 4.75V to 13.2V, with adjustable output from 0.7V to 5V.

Electrical parameters are specified before and after irradiation up to a total ionizing dose of 50 krad. The converter operates from −55°C to +100°C at full load. Microchip intends the design to address power and size constraints in onboard processing systems.

Key Figures

Continuous output current: 20A Package weight: 25g Package dimensions: 1.51” x 1.51” x 0.45” +5 more

Continuous output current

20A

POL-05-20S-T converter

Package weight

25g

Surface-mount package

Package dimensions

1.51” x 1.51” x 0.45”

Surface-mount package

Input voltage range

4.75V to 13.2V

POL-05-20S-T converter

Adjustable output voltage

0.7V to 5V

POL-05-20S-T converter

Total Ionizing Dose

50 krad

Electrical parameters specified before and after irradiation

Linear Energy Transfer

43 MeV·cm²/mg

Single Event Effects characterization

Operating temperature

−55°C to +100°C

At full load

Key Terms

gallium nitride (gan), point-of-load (pol) converter, synchronous buck topology, total ionizing dose (tid), +1 more

5 terms

gallium nitride (gan) technical

"uses Gallium Nitride (GaN) power devices"

Gallium nitride (GaN) is a durable semiconductor material used to build electronic components that switch power and radio signals faster and with less energy loss than older silicon parts. Think of it as a more efficient, high-performance engine that lets devices be smaller, run cooler, and handle higher voltages; investors watch GaN adoption because it can lower manufacturing and operating costs, enable new products, and shift competitive advantage and profit margins across chipmakers and equipment makers.

point-of-load (pol) converter technical

"a radiation-tolerant, Point-of-Load (POL) converter"

A point-of-load (POL) converter is a small DC–DC power regulator placed physically close to the electronic circuit or component it supplies, converting an intermediate or bulk supply voltage into the precise low-voltage rail the load needs. By locating regulation at the 'point' of consumption it reduces voltage drop and noise from distribution lines, improves transient response to changing load current, and allows a higher upstream bus voltage instead of routing many low-voltage rails across a board or rack. POL converters can be standalone modules or integrated chips and still require an upstream power source or intermediate bus to provide their input voltage.

synchronous buck topology technical

"combines a synchronous buck topology with current-mode control"

A synchronous buck topology is a type of DC–DC step-down converter that uses two actively driven switching transistors (one high‑side and one low‑side) instead of a diode for the return path. The controller alternates the transistors on and off to chop the input voltage, then smooths the pulses with an inductor and output capacitor to produce a lower, regulated DC output; replacing the diode with a driven low‑side transistor reduces conduction losses and improves efficiency. It requires timed gate control (dead‑time and shoot‑through protection) and typically needs more complex driver circuitry than a diode‑rectified (asynchronous) buck, and efficiency can fall at very light loads unless additional control techniques are used.

total ionizing dose (tid) technical

"up to a Total Ionizing Dose (TID) of 50 krad"

Total ionizing dose (TID) is the cumulative amount of ionizing radiation energy absorbed by a material or device over time, expressed as energy per unit mass (commonly grays, Gy, or rads). It measures the gradual, accumulated damage caused by ionizing radiation (gamma rays, X-rays, electrons) and is used in testing and regulation to quantify long-term degradation of electronic components, materials, and medical devices. TID differs from dose rate (how quickly radiation is delivered) and from single-event effects: it records the total exposure over time and does not describe instantaneous transient faults caused by a single high-energy particle.

single event effects (see) technical

"characterized for Single Event Effects (SEE)"

Damage or malfunctions in electronic components caused when a single energetic particle (for example a cosmic ray, neutron, or heavy ion) strikes a device and deposits enough charge to change a circuit’s state. Single-event effects include temporary errors like bit flips or transient pulses (single-event upsets and transients) and potentially destructive outcomes such as latch-up, burnout, or permanent functional failure; they are distinguished by whether the effect is transient or causes lasting damage and by the device area or circuit function affected.

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Power device delivers 20A of continuous current in a compact form factor for new space and traditional space applications

CHANDLER, Ariz., Oct. 14, 2026 (GLOBE NEWSWIRE) -- Microchip Technology (Nasdaq: MCHP) today announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the demanding power requirements of space processing applications. The new device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current with high efficiency and power density.

The converter is supplied in a compact, 25g surface-mount package measuring 1.51” x 1.51” x 0.45”. By delivering 20A in this footprint, the device helps engineers manage the size, power and energy constraints that accompany increasingly capable onboard processing systems. The GaN-based design is intended to provide a combination of high efficiency, high power density and continuous current capability for challenging space power applications.

“Space designers are integrating increasingly powerful digital processing, creating demand for compact power solutions that can respond quickly, while operating reliably in harsh environments,” said Ronan Dillon, senior director of Microchip’s high-reliability and RF business unit. “The POL-05-20S-T extends our space power portfolio with a high-current GaN solution that helps customers achieve high power density, design flexibility and system-level reliability.”

The POL-05-20S-T is designed for high-current, fast-transient applications such as for the core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. It combines a synchronous buck topology with current-mode control to support fast current transients and stable operation. With a wide input range of 4.75V to 13.2V and adjustable 0.7V to 5V output, the device offers flexibility to address multiple power rails and system architectures.

Designed for harsh radiation environments, the POL-05-20S-T has electrical parameters specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad. The device is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg. It operates from −55°C to +100°C at full load, supporting systems exposed to wide temperature variations over the course of a mission.

To support reliable power delivery, the POL-05-20S-T incorporates remote sensing, undervoltage and overvoltage protection, soft start, an enable pin and power-good indication pin. Adjustable output voltage, a wide input range and output droop regulation further help designers tailor the converter to high-current loads requiring tight voltage regulation and rapid transient response.

Microchip delivers a comprehensive space power suite that is part of an end-to-end solution for space system designers, including EMI filters, DC-DC converters, point-of-load regulators, Hi-Rel discrete components, FPGAs and the PIC64-HPSC High-Performance Spaceflight Computing devices. Built on decades of space heritage, the portfolio helps customers simplify development, reduce design risk and accelerate deployment of mission-critical space systems. For more information about Microchip’s space solutions, visit the website.

Pricing and Availability

The POL-05-20S-T is now available in production quantities. You can purchase directly from Microchip or contact a Microchip sales representative or authorized worldwide distributor.

Resources

High-res images available through Flickr or editorial contact (feel free to publish):
• Application image: www.flickr.com/photos/microchiptechnology/55543010558/sizes/l

About Microchip Technology:
Microchip Technology Inc. is a broadline supplier of semiconductors committed to making innovative design easier through total system solutions that address critical challenges at the intersection of emerging technologies and durable end markets. Its easy-to-use development tools and comprehensive product portfolio supports customers throughout the design process, from concept to completion. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support and delivers solutions across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. For more information, visit the Microchip website at www.microchip.com.

Note: The Microchip name and logo and the Microchip logo are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. All other trademarks mentioned herein are the property of their respective companies.

Editorial Contact:
Kim Dutton
kim.dutton@microchip.com