Micron Technology Inc Stock Price, News & Analysis

Micron Technology (Nasdaq: MU) has announced its participation in the upcoming KeyBanc Capital Markets Technology Leadership Forum in Deer Valley, Utah. Company executives will present on Monday, August 11, at 9:00 a.m. Mountain Time.

Investors can access both the live webcast and replay of the presentation through Micron's Investor Relations website at investors.micron.com/.

Micron Technology (Nasdaq: MU) has unveiled three groundbreaking data center SSDs powered by its G9 NAND technology. The portfolio includes the 9650 SSD, the world's first PCIe Gen6 data center SSD delivering 28 GB/s performance, the 6600 ION SSD offering industry-leading 122TB capacity (with 245TB version planned), and the 7600 SSD featuring superior PCIe Gen5 performance.

The new portfolio specifically targets AI workloads, with the 9650 delivering twice the performance of competitive drives and 25-67% better energy efficiency. The 6600 ION increases storage density by up to 67% and can provide 88PB per rack, while the 7600 offers best-in-class sub-1 millisecond latency for critical response time workloads.

Micron Technology (Nasdaq: MU) has launched the industry's highest-density, radiation-tolerant single-layer cell (SLC) NAND flash memory with 256 gigabits capacity, specifically designed for space applications. The product, available now, is the first in a planned portfolio of space-qualified NAND, NOR, and DRAM solutions.

The memory undergoes rigorous testing aligned with NASA's PEM-INST-001 Level 2 standards, including radiation characterization and extreme environment testing. Micron's technology is already deployed in NASA's Earth Surface Mineral Dust Source Investigation (EMIT) mission through Mercury Systems' solid-state data recorders.

As the only U.S.-based memory manufacturer, Micron is strengthening its aerospace support through modernized facilities, specialized customer labs, and enhanced manufacturing processes for space-grade solutions.

[ "First major manufacturer to offer high-density 256Gb radiation-tolerant SLC NAND", "Already proven successful deployment in NASA's EMIT mission", "End-to-end U.S.-based supply chain control enhancing security and traceability", "Expanding manufacturing capabilities in Manassas, Virginia facility", "Rigorous NASA-aligned testing and certification processes" ]

Micron Technology (Nasdaq: MU) has unveiled the Micron 2600 NVMe SSD, featuring the industry's first 9th-generation QLC NAND and innovative Adaptive Write Technology (AWT). The new SSD delivers exceptional performance with up to 63% faster sequential write and 49% faster random write speeds compared to competing value QLC and TLC SSDs.

The 2600 SSD achieves speeds up to 3.6 GB/s and features a multi-tiered SLC, TLC, and QLC dynamic caching architecture, providing up to four times faster sequential write speeds while writing up to 800GB of data to a 2TB SSD. Now shipping globally in multiple form factors (22x30mm, 22x42mm, and 22x80mm) with capacities from 512GB to 2TB, the drive is optimized for ultra-thin laptops, workstations, and handheld gaming devices.

Micron Technology (NASDAQ:MU) reported outstanding fiscal Q3 2025 results, achieving record revenue of $9.30 billion, up from $8.05 billion in the previous quarter and $6.81 billion year-over-year. The company posted GAAP net income of $1.89 billion ($1.68 per share) and non-GAAP net income of $2.18 billion ($1.91 per share).

Key highlights include nearly 50% sequential growth in HBM revenue and data center revenue more than doubling year-over-year. Operating cash flow reached $4.61 billion. The company declared a quarterly dividend of $0.115 per share and projects Q4 2025 revenue of $10.7 billion (±$300 million), representing 15% sequential growth.

Micron Technology (MU) announced the integration of its HBM3E 36GB 12-high memory solution into AMD's upcoming Instinct MI350 Series GPUs. The collaboration focuses on enhancing AI data center capabilities through improved power efficiency and performance. The AMD Instinct MI350 Series GPU platforms, featuring AMD's CDNA 4 architecture, will incorporate 288GB of HBM3E memory capacity per GPU, delivering up to 8 TB/s bandwidth. This enables support for AI models with up to 520 billion parameters on a single GPU. In full platform configuration, the MI350 Series achieves peak theoretical performance of 161 PFLOPS at FP4 precision, with up to 2.3TB of HBM3E memory. The partnership aims to accelerate AI solutions' time to market, with Micron's HBM3E technology now qualified on multiple leading AI platforms.

Micron Technology (MU) announces a massive $200 billion investment plan for U.S. semiconductor manufacturing and R&D, including $150B for manufacturing and $50B for R&D. The expansion includes building a second leading-edge memory fab in Idaho, modernizing facilities in Virginia, and developing HBM manufacturing capabilities. The investment aims to create 90,000 direct and indirect jobs and increase Micron's U.S. DRAM production to 40% of its total output. The plan includes two high-volume fabs in Idaho, up to four in New York, and Virginia facility expansion. Micron has secured $6.4B in CHIPS Act funding and expects all investments to qualify for Advanced Manufacturing Investment Credit. The first Idaho fab will begin DRAM production in 2027, with the second Idaho fab scheduled before the first New York facility. The company also commits $325M for workforce development across these states.

Micron Technology (MU) has announced the shipment of HBM4 36GB 12-high samples to key customers, marking a significant advancement in AI memory technology. Built on their 1β DRAM process, the new HBM4 achieves speeds over 2.0 TB/s per memory stack, delivering more than 60% better performance compared to the previous generation. The product features a 2048-bit interface and demonstrates over 20% improved power efficiency versus their previous HBM3E products. This advancement is particularly crucial for AI applications, enhancing inference performance in large language models and chain-of-thought reasoning systems. Micron plans to begin volume production of HBM4 in 2026, aligning with customers' next-generation AI platform deployments.

Micron Technology (MU) has announced the shipping of qualification samples of the world's first 1γ (1-gamma) node-based LPDDR5X memory, designed for flagship smartphones. The new memory delivers industry-leading speed of 10.7 Gbps with up to 20% power savings, enabling faster AI applications and longer battery life. The LPDDR5X features the industry's thinnest package at 0.61mm, 6% thinner than competitors and 14% reduction from previous generation. Testing with Llama 2 showed significant performance improvements: 30% faster restaurant recommendations, 50% faster language translation, and 25% faster car purchase recommendations. The technology uses advanced EUV lithography and will be available in 8GB to 32GB capacities for 2026 flagship smartphones.