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onsemi Introduces GaNEXUS Gallium Nitride Power Portfolio

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onsemi (ON) launched GaNEXUS, a gallium nitride power portfolio now sampling from 40V to 650V, including 650V GaNEXUS Smart FETs with integrated protection. The devices target AI data centers, 48V systems, robotics, industrial automation, and energy infrastructure.

According to onsemi, GaNEXUS enables faster switching, lower losses, higher power density, and improved thermal performance versus conventional silicon, and can cut magnetics size by up to ~60%, raise power density by ~1.5x–2x, and improve efficiency by ~0.5–2%, depending on topology.

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AI-generated analysis. Not financial advice.

Positive

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Key Figures

GaNEXUS voltage range: 40V to 650V Smaller magnetics (low/med V): ~30–60% smaller Power density gain (low/med V): ~1.5x–2x higher +5 more
8 metrics
GaNEXUS voltage range 40V to 650V Initial GaNEXUS FET portfolio sampling range
Smaller magnetics (low/med V) ~30–60% smaller AI server 48V IBC, BBU and motor drive systems
Power density gain (low/med V) ~1.5x–2x higher Low- and medium-voltage GaNEXUS applications
Efficiency improvement (low/med V) ~0.5–2% Depending on topology in low/medium-voltage systems
Magnetics reduction (high V) Up to ~60% High-frequency AC-DC and resonant power stages
Power density gain (high V) ~1.5x–2x higher PFC, LLC and high-voltage DC-DC architectures
Data center power share Up to 9% AI data centers’ share of U.S. electricity by 2030
Power & cooling opex share Up to 40% Portion of total data center operating expenses

Market Reality Check

Price: $120.90 Vol: Volume 11,791,346 is roug...
normal vol
$120.90 Last Close
Volume Volume 11,791,346 is roughly in line with 20-day average 11,853,180 (relative volume 0.99). normal
Technical Price $120.90 trading above 200-day MA $65.83 and about 10.39% below 52-week high $134.92.

Peers on Argus

ON gained 3.1% while peers were mixed: GFS -1.85%, UMC -1.43%, STM +0.36%, ASX +...

ON gained 3.1% while peers were mixed: GFS -1.85%, UMC -1.43%, STM +0.36%, ASX +0.11%, CRDO +2.19%. No broad semiconductor move or clustered peer news was detected, pointing to a stock-specific catalyst.

Historical Context

5 past events · Latest: Jun 08 (Positive)
Pattern 5 events
Date Event Sentiment Move Catalyst
Jun 08 Design tool launch Positive +4.3% Launch of Elite Pairing Studio cloud tool for SiC power design.
May 07 Convertible notes pricing Negative -4.9% Pricing of $1.3B 0% convertible senior notes due 2031.
May 06 Convertible notes proposal Negative +3.0% Announcement of proposed $1.3B convertible notes and stock repurchases.
May 04 Q1 2026 earnings Neutral +0.6% Q1 results with $1,513.3M revenue and mixed GAAP vs non-GAAP metrics.
Apr 28 EV partnership Positive -4.8% Expanded EliteSiC collaboration with Geely for 900V EV architectures.
Pattern Detected

Recent news shows mixed reactions: product tools often saw gains, while strategic deals and capital raises sometimes drew selling, producing both aligned and divergent moves.

Recent Company History

Over the last few months, onsemi has combined product innovation with capital markets and strategic activity. An Elite Pairing Studio launch on Jun 08 focused on SiC design tools and saw a +4.31% move. Earlier, convertible note offerings in early May produced opposite price reactions despite similar structures. Q1 2026 earnings highlighted $1,513.3M revenue and AI data center strength, while an EliteSiC EV partnership with Geely on Apr 28 drew a negative reaction. Today’s GaNEXUS GaN power launch extends this pattern of AI- and electrification-focused power offerings.

Market Pulse Summary

This announcement adds GaNEXUS gallium nitride power devices to onsemi’s existing silicon and EliteS...
Analysis

This announcement adds GaNEXUS gallium nitride power devices to onsemi’s existing silicon and EliteSiC portfolio, targeting AI data centers, robotics, and energy infrastructure with up to 1.5x–2x higher power density and ~0.5–2% efficiency gains. It follows recent initiatives in SiC tools and EV partnerships, reinforcing a focus on high-growth electrification and AI workloads. Investors may track adoption in AI power shelves, 48V systems, and EV charging as indicators of commercial traction.

Key Terms

gallium nitride, dc-dc
2 terms
gallium nitride medical
"a new gallium nitride (GaN) power portfolio engineered to deliver higher efficiency"
Gallium nitride is a durable semiconductor material used to make electronic components that switch faster, handle higher voltages, and waste less energy than older silicon parts. Think of it as a lighter, more efficient motor in an appliance: it lets devices shrink, run cooler and save power, which can lower manufacturing costs, enable new products and boost sales or margins for companies that adopt it—key factors investors watch.
dc-dc technical
"In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC"
A dc-dc is an electronic power converter that changes one direct-current voltage level to another, like a small transformer for batteries or electronic circuits. Investors care because these components determine how efficiently devices use power, affect product size and battery life, and can influence manufacturing costs and reliability—traits that impact a maker’s competitiveness and profit margins much like a car’s fuel efficiency affects its appeal and running costs.

AI-generated analysis. Not financial advice.

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Now sampling gallium nitride devices to deliver higher power density, improved efficiency in AI data centers, robotics, and energy infrastructure applications

SCOTTSDALE, Ariz., June 09, 2026 (GLOBE NEWSWIRE) -- Summary

onsemi today announced the launch of GaNEXUS™, a new gallium nitride (GaN) power portfolio engineered to deliver higher efficiency, greater power density, and improved thermal performance across AI data centers, industrial automation, robotics, and energy infrastructure applications. The initial portfolio includes GaNEXUS FETs sampling across voltage ranges from 40V to 650V, including 650V GaNEXUS Smart, GaN FETs with integrated protection features, to simplify system integration and improve reliability.

News Highlights

  • onsemi’s GaNEXUS power portfolio delivers faster switching speeds, lower switching losses, higher power density, and improved thermal performance for next-generation power architectures
  • GaNEXUS FETs from 40V to 650V and 650V GaNEXUS Smart, GaN FETs with integrated protection features, are sampling now
  • When combined with onsemi’s Treo Platform for integrated sensing, control, protection, and power management, GaNEXUS enables smarter, more reliable, and more robust system-level power solutions
  • Together, onsemi’s silicon, EliteSiC, and GaNEXUS technologies give customers the flexibility to optimize efficiency, thermal performance, system size, and total cost across the full power-delivery chain

What’s New: onsemi announced today the launch of its GaNEXUS™ gallium nitride (GaN) power portfolio, with the initial sampling of GaNEXUS FETs across voltage ranges from 40V to 650V as well as its GaNEXUS Smart 650V GaN FETs. The portfolio is ideally suited for power-hungry applications including AI data center power delivery, 48V systems, robotics and industrial automation, and energy infrastructure.

The addition of GaNEXUS to onsemi’s intelligent power portfolio expands the company’s ability to deliver optimized power solutions across a range of applications, voltage domains, and performance requirements. As part of onsemi’s broader power portfolio alongside silicon and EliteSiC technologies, GaNEXUS gives customers greater flexibility to optimize performance, efficiency, thermal behavior, and total system cost across the full power-delivery architecture.

Why it Matters: As AI infrastructure, electrification, industrial automation, and energy systems continue to increase demand for more efficient and compact power architectures, designers are facing growing challenges around energy consumption, thermal management, and system size. AI data centers alone are expected to consume up to 9% of U.S. electricity generation by 20301, with power and cooling costs accounting for up to 40% of the total data center operating expenses2.

GaNEXUS addresses these challenges by enabling faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared to conventional silicon-based solutions. These advantages allow customers to reduce the size of magnetics and cooling systems while improving overall system efficiency and responsiveness and lowering system cost in applications ranging from AI data center power delivery and electric vehicle charging to robotics and industrial power systems.

“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, vice president of the GaN division at onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”

How it Works: GaNEXUS solutions are engineered to improve how modern power systems convert and manage energy. When paired with onsemi’s Treo Platform for integrated sensing, control, protection, and power-management, GaNEXUS can deliver complete system-level power solutions that are smarter, more reliable, and more robust. This system-level approach helps customers simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimize performance across the full power delivery chain.

In low- and medium-voltage systems, including AI server 48V intermediate bus converter (IBC) and battery backup units (BBU) and motor drives, GaNEXUS enables:

  • ~30–60% smaller magnetics
  • ~1.5x–2x higher power density
  • ~0.5–2% efficiency improvement, depending on topology
  • Reduced switching losses, improved thermal performance and control stability

In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables:

  • Up to ~60% reduction in magnetics size in high-frequency AC-DC and resonant stages
  • ~1.5x–2x higher power density in PFC, LLC, and HV DC-DC architectures
  • ~0.5–1% efficiency gains with meaningful thermal and operating-cost impact at scale
  • Lower losses reduce thermal stress in compact, high-power systems
  • GaNEXUS Smart reduces system risk and simplifies power stage design for faster qualification and higher confidence

GaNEXUS devices feature thermally enhanced packages with industry-standard footprints for dual sourcing, like TOLL Bottom Cooling, TOLT Top Cooling, and dual cooling 3.3mm x 3.3mm and 5mm x 6mm packages.

Additional Information

____________________
1 Source Powering Intelligence: Analyzing Artificial Intelligence and Data Center Energy Consumption
2 Source: Data Center Operating Costs: Complete Guide (2026)

About onsemi
onsemi (Nasdaq: ON) delivers intelligent power and sensing technologies that enable electrification, energy efficiency, safety, and automation across automotive, industrial, and AI data center end-markets. With a highly differentiated and innovative product portfolio, onsemi helps customers solve complex challenges to achieve higher efficiency, improved performance, and lower system cost, while supporting a safer, cleaner, and more energy‑efficient world. The company is part of the S&P 500® index. Learn more at www.onsemi.com.

onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company references its website in this news release, information on the website is not to be incorporated herein.

Contact:
onsemi
Michael Mullaney
michael.mullaney@onsemi.com
+1 838-289-7314

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/5ca786af-b7b1-4cef-bf7e-dd21fa649e54


FAQ

What is onsemi's GaNEXUS gallium nitride power portfolio launched in June 2026 (ON)?

GaNEXUS is onsemi’s new GaN power portfolio targeting AI data centers, industrial automation, robotics, and energy infrastructure. According to onsemi, it spans 40V–650V GaN FETs, including GaNEXUS Smart 650V devices with integrated protection to simplify design and improve reliability.

How does onsemi's GaNEXUS improve power density and efficiency for AI data centers (ON)?

GaNEXUS is designed to increase power density and efficiency in AI data center power systems. According to onsemi, it can deliver ~1.5x–2x higher power density, ~0.5–2% efficiency gains, and up to ~60% magnetics size reduction, depending on voltage range and topology.

What applications are targeted by onsemi's GaNEXUS GaN FETs announced June 9, 2026 (ON)?

GaNEXUS targets power-hungry applications needing compact, efficient power conversion. According to onsemi, key uses include AI data center power delivery, 48V intermediate bus converters, battery backup units, robotics, motor drives, industrial automation, high‑voltage DC‑DC conversion, PFC and LLC power stages, and EV charging.

What performance benefits does GaNEXUS offer over conventional silicon power solutions from onsemi (ON)?

GaNEXUS aims to outperform conventional silicon in switching and thermal behavior. According to onsemi, it offers faster switching speeds, lower switching losses, higher power density, improved thermal performance, and can reduce cooling and magnetics size while helping lower overall system operating costs at scale.

What are GaNEXUS Smart 650V GaN FETs and how do they help designers of ON-based systems?

GaNEXUS Smart devices are 650V GaN FETs with integrated protection features. According to onsemi, they help reduce system risk, simplify the power stage, accelerate qualification, and increase design confidence for compact, high‑power applications such as AI power shelves and high‑voltage conversion stages.

How does onsemi's GaNEXUS integrate with the Treo Platform for system-level power solutions (ON)?

GaNEXUS can be combined with onsemi’s Treo Platform for sensing, control, protection, and power management. According to onsemi, this pairing enables smarter, more reliable, and more robust system‑level power solutions, helping simplify design complexity, shorten development, and optimize thermal and efficiency performance.