RTX to develop ultra-wide bandgap semiconductors for DARPA

Rhea-AI Summary

Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors (UWBGS) based on diamond and aluminum nitride technology. This new class of materials offers improved conductivity and thermal management properties, revolutionizing semiconductor electronics.

The contract's first phase focuses on developing diamond and aluminum nitride semiconductor films and integrating them into electronic devices. The second phase aims to optimize and mature the technology for larger diameter wafers in sensor applications.

UWBGS offer advantages over traditional semiconductors, enabling compact, high-power RF switches, limiters, and power amplifiers. The goal is to develop materials for extended capability and range in radar and communication systems, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems like hypersonics.

Positive

• Awarded a three-year contract from DARPA for advanced semiconductor development
• Potential for revolutionary advancements in semiconductor technology
• UWBGS offer improved conductivity and thermal management properties
• Possible applications in radar, communication systems, and high-speed weapon systems

Negative

• None.

New class of materials offer improved conductivity and thermal management properties

ANDOVER, Mass., Oct. 2, 2024 /PRNewswire/ -- Raytheon, an RTX (NYSE: RTX) business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors, or UWBGS, based on diamond and aluminum nitride technology that revolutionize semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications.

During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.

"This is a significant step forward that will once again revolutionize semiconductor technology," said Colin Whelan, president of Advanced Technology at Raytheon. "Raytheon has extensive proven experience developing similar materials such as Gallium Arsenide and Gallium Nitride for Department of Defense systems. By combining that pioneering history and our expertise in advanced microelectronics, we'll work to mature these materials towards future applications."

The unique material properties of UWBGS offer several advantages over traditional semiconductor technologies, enabling highly compact, ultra-high power radio frequency switches, limiters, and power amplifiers. Their high thermal conductivity also allows the ability to operate at higher temperatures and in more extreme environments.

The team's goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.

Work on this contract is being conducted at the company's foundry in Andover, Massachusetts.

About Raytheon
Raytheon, an RTX business, is a leading provider of defense solutions to help the U.S. government, our allies and partners defend their national sovereignty and ensure their security. For more than 100 years, Raytheon has developed new technologies and enhanced existing capabilities in integrated air and missile defense, smart weapons, missiles, advanced sensors and radars, interceptors, space-based systems, hypersonics and missile defense across land, air, sea and space.

About RTX
With more than 185,000 global employees, RTX pushes the limits of technology and science to redefine how we connect and protect our world. Through industry-leading businesses – Collins Aerospace, Pratt & Whitney, and Raytheon – we are advancing aviation, engineering integrated defense systems, and developing next-generation technology solutions and manufacturing to help global customers address their most critical challenges. The company, with 2023 sales of $69 billion, is headquartered in Arlington, Virginia.

For questions or to schedule an interview, please contact corporatepr@rtx.com

 

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SOURCE RTX

FAQ

What is the purpose of RTX's contract with DARPA for UWBGS development?

RTX's contract with DARPA aims to develop ultra-wide bandgap semiconductors (UWBGS) based on diamond and aluminum nitride technology, which offer improved conductivity and thermal management properties for advanced electronic applications.

How long is the UWBGS development contract between RTX and DARPA?

The contract between RTX and DARPA for UWBGS development is a three-year, two-phase agreement.

What are the potential applications for the UWBGS technology being developed by RTX?

The UWBGS technology being developed by RTX has potential applications in radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.

Where is RTX conducting the work for the DARPA UWBGS contract?

RTX is conducting the work for the DARPA UWBGS contract at the company's foundry in Andover, Massachusetts.