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Veeco Receives Propel®300 MOCVD System Order From Leading GaN-on-Si Power Semiconductor IDM

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Veeco (NASDAQ: VECO) received an order for a Propel®300 MOCVD system from a leading power semiconductor IDM for GaN epitaxy on 300mm Si wafers. The order reinforces Veeco’s position in 300mm MOCVD technology and follows prior Propel®300 shipments across compound semiconductor markets.

Veeco highlights a 2.3x chip-per-wafer advantage moving from 200mm to 300mm, compatibility with existing 300mm production lines, and features including TurboDisc MOCVD technology, automated wafer handling, best-in-class thickness and doping uniformity, low defectivity, and long campaigns without in-situ cleaning. Yole Group projects the GaN device market to grow at a 35% CAGR from $555M (2025) to $2.5B (2030), driven by automotive, industrial, and data center power-efficiency demand.

Veeco (NASDAQ: VECO) ha ricevuto un ordine per un sistema Propel®300 MOCVD da un IDM leader nel settore dei semiconduttori di potenza per l’epitassia di GaN su wafer da 300 mm in Si. L’ordine rafforza la posizione di Veeco nella tecnologia MOCVD da 300 mm e segue le spedizioni Propel®300 nel mercato dei semiconduttori composti.

Veeco evidenzia un vantaggio di 2,3x chip-per-wafer passando da 200 mm a 300 mm, la compatibilità con le linee di produzione da 300 mm esistenti e caratteristiche quali TurboDisc MOCVD, movimentazione automatizzata dei wafer, uniformità di spessore e drogaggio tra le migliori della categoria, bassa difettività e campagne lunghe senza pulizia in-situ. Il gruppo Yole proietta che il mercato dei dispositivi GaN crescerà a un CAGR del 35% da $555 milioni (2025) a $2,5 miliardi (2030), trainato dalla domanda di efficienza energetica nei settori automobilistico, industriale e dei data center.

Veeco (NASDAQ: VECO) recibió un pedido para un sistema Propel®300 MOCVD de un IDM líder en semiconductores de potencia para epitaxia de GaN en obleas de Si de 300 mm. El pedido refuerza la posición de Veeco en la tecnología MOCVD de 300 mm y sigue a envíos previos de Propel®300 en mercados de semiconductores compuestos.

Veeco destaca una ventaja de 2,3x chips por oblea al pasar de 200 mm a 300 mm, compatibilidad con las líneas de producción existentes de 300 mm y características como la tecnología TurboDisc MOCVD, manejo automático de obleas, la mejor uniformidad de espesor y dopaje, baja defectividad y campañas largas sin limpieza in-situ. El grupo Yole proyecta que el mercado de dispositivos GaN crecerá a una tasa de CAGR del 35% desde $555 millones (2025) hasta $2,5 mil millones (2030), impulsado por la demanda de eficiencia energética en automoción, industria y centros de datos.

Veeco (NASDAQ: VECO)Propel®300 MOCVD 시스템에 대한 주문을 선도적인 파워 반도체 IDM으로부터 받았으며 GaN 에피택시 GaN on 300mm Si 웨이퍼를 제공합니다. 이 주문은 Veeco의 300mm MOCVD 기술에서의 위치를 강화하고, 이전 Propel®300의 반도체 재료 시장 전반으로의 공급에 이어집니다.

Veeco는 200mm에서 300mm로 전환할 때 칩당 웨이퍼 수가 2.3배 향상되고, 기존의 300mm 생산 라인과의 호환성, TurboDisc MOCVD 기술, 웨이퍼 자동 취급, 두께 및 도핑 균일성 최상, 결함률 저하, 현장 청소 없이도 긴 캠페인 등의 특징을 강조합니다. Yole Group은 GaN 소자 시장이 2025년의 $555M에서 2030년의 $2.5B까지 매년 35%의 CAGR로 성장할 것으로 전망합니다.

Veeco (NASDAQ: VECO) a reçu une commande pour un système Propel®300 MOCVD auprès d'un IDM de premier plan dans les semiconducteurs de puissance pour l’épitaxie GaN sur des plaquettes Si de 300 mm. La commande renforce la position de Veeco dans la technologie MOCVD 300 mm et s’inscrit dans la continuité des livraisons Propel®300 sur les marchés des semiconducteurs composites.

Veeco met en avant un avantage de 2,3x puces par plaquette lors du passage de 200 mm à 300 mm, la compatibilité avec les lignes de production 300 mm existantes, et des caractéristiques telles que la technologie TurboDisc MOCVD, la manipulation automatisée des plaquettes, la meilleure uniformité d’épaisseur et de dopage, une faible taux de défauts et de longues campagnes sans nettoyage in-situ. Le groupe Yole prévoit que le marché des dispositifs GaN croîtra à un CAGR de 35% de $555M (2025) à $2,5B (2030), porté par la demande d’efficacité énergétique dans l’automobile, l’industrie et les centres de données.

Veeco (NASDAQ: VECO) hat eine Bestellung für ein System Propel®300 MOCVD von einem führenden IDM im Bereich Power-Semiconductors erhalten für GaN-Epitaxie auf 300-mm-Si-Wafer. Die Bestellung stärkt Veecos Position in der 300-mm-MOCVD-Technologie und folgt auf frühere Propel®300-Lieferungen in Märkten für Compound-Semiconductors.

Veeco hebt einen 2,3x-Chips-per-Wafer-Vorteil beim Übergang von 200 mm auf 300 mm hervor, die Kompatibilität mit bestehenden 300-mm-Produktionslinien und Merkmale wie die TurboDisc MOCVD-Technologie, automatisierte Wafer-Handhabung, branchenbeste Dicken- und Dotierungs-Ungleichmäßigkeit, geringe Defektivität und lange Kampagnen ohne In-Situ-Reinigung. Die Yole Group prognostiziert, dass der GaN-Geräte-Markt von $555M (2025) auf $2,5B (2030) mit einer CAGR von 35% wächst, angetrieben durch die Nachfrage nach Energieeffizienz in der Automobil-, Industrie- und Data-Center-Branche.

Veeco (NASDAQ: VECO) تلقّت أمراً بنظام Propel®300 MOCVD من IDM رائد في أشباه الموصلات عالية القدرة لـ التكاثف النسيجي لـ GaN على شرائح Si بقطر 300 مم. يعزز الطلب موقع Veeco في تكنولوجيا MOCVD بقطر 300 مم ويتبع شحنات Propel®300 السابقة عبر أسواق أشباه الموصلات المركبة.

تُبرز Veeco ميزة 2.3x شرائح لكل رقاقة عند الانتقال من 200 مم إلى 300 مم، وتوافقها مع خطوط الإنتاج 300 مم القائمة، وميزات تشمل تكنولوجيا TurboDisc MOCVD، التعامل الآلي مع الشرائح، وأفضل توافر في اتساق السماكة والدّوْب، وانخفاض العيوب، وحملات طويلة بدون تنظيف داخلي في المكان. تتوقع مجموعة Yole أن ينمو سوق أجهزة GaN بمعدل نمو سنوي مركب قدره 35% من $555M (2025) إلى $2.5B (2030)، مدفوعاً بالطلب على كفاءة الطاقة في السيارات والصناعات ومراكز البيانات.

Positive
  • Order received from leading power IDM for Propel®300
  • 2.3x chips per wafer shifting from 200mm to 300mm
  • Supports existing 300mm lines to lower device costs
  • GaN market projected 35% CAGR to $2.5B by 2030
  • TurboDisc MOCVD: thickness and doping uniformity
  • Long campaigns without in-situ cleaning reduce OOE per wafer
Negative
  • None.

Insights

Order from a major IDM for the Propel®300 signals commercial progress in 300mm GaN-on-Si power-device production and potential revenue upside.

The order links Veeco's Propel®300 to a large power semiconductor IDM moving to 300mm GaN-on-Si epitaxy, which directly supports higher wafer throughput (about 2.3× more chips per wafer). The product claims—TurboDisc MOCVD, automated wafer handling, long campaigns without in-situ cleaning—address manufacturing pain points: uniformity, defectivity, and cost of ownership per wafer.

Dependencies and risks include the single-order nature and lack of disclosed contract size or timeline, which limit visibility into near-term revenue. Adoption also depends on the IDM completing qualification and scaling on existing 300mm lines; until production ramp data appears, the commercial and financial impact remains uncertain.

Watch for concrete milestones: qualification completion and production start dates, repeat orders or multi-system agreements, and any quantified revenue or shipment guidance over the next 12–24 months. Also monitor disclosed unit counts or multi-year contracts to assess whether this is a trial order or a production rollout.

Supports Rapidly Growing GaN Device Market Driven by Demand for Power Efficiency for Data Center, Industrial, and Automotive Applications

PLAINVIEW, N.Y., Nov. 05, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (NASDAQ: VECO) announced today receipt of an order for a Propel®300 system from a major power semiconductor integrated device manufacturer (IDM) for gallium nitride (GaN) epitaxy on 300mm silicon (Si) wafers. This order cements Veeco’s position as a leader in 300mm MOCVD technology, building on years of experience including previous shipments of the Propel®300 platform for various applications across the compound semiconductor industry.

“Qualifying Propel®300 for 300mm GaN-on-Si epitaxy for power devices is a significant achievement in the path to widespread adoption of GaN technology,” commented Anil Vijayendran, Vice President, MOCVD Product Line Management. “Moving from 200mm to 300mm enables customers to achieve 2.3 times more chips per wafer, while allowing them to use existing 300mm production lines, and ultimately lower their device costs”

GaN’s high efficiency and superior thermal and switching properties, which can significantly reduce device and overall system size and weight, are accelerating its adoption in power semiconductor manufacturing. According to Yole Group, the GaN device market is expected to grow at a 35% CAGR from $555M in 2025 to $2.5B in 2030. Key to this growth will be the increased adoption of GaN technology in automotive, industrial, and data center applications, where the continuously rising power consumption requirements of AI workloads are fueling demand for more efficient power supplies.

Featuring Veeco’s proven MOCVD TurboDisc technology, Propel®300 combines exceptional performance with fully automated wafer handling to provide not only best-in-class thickness and doping uniformity but also low defectivity and high productivity. These benefits, together with its industry-renowned ease of use and long campaigns that do not require in-situ cleaning, contribute to Propel®300’s low cost of ownership per wafer.

About Veeco

Veeco (NASDAQ: VECO) is an innovative manufacturer of semiconductor process equipment. Our laser annealing, ion beam, metal organic chemical vapor deposition (MOCVD), single wafer etch & clean and lithography technologies play an integral role in the fabrication and packaging of advanced semiconductor devices. With equipment designed to optimize performance, yield and cost of ownership, Veeco holds leading technology positions in the markets we serve. To learn more about Veeco’s systems and service offerings, visit www.veeco.com.

To the extent that this news release discusses expectations or otherwise makes statements about the future, such statements are forward-looking and are subject to a number of risks and uncertainties that could cause actual results to differ materially from the statements made. These factors include the risks discussed in the Business Description and Management's Discussion and Analysis sections of Veeco's Annual Report on Form 10-K for the year ended December 31, 2024 and in our subsequent quarterly reports on Form 10-Q, current reports on Form 8-K and press releases. Veeco does not undertake any obligation to update any forward-looking statements to reflect future events or circumstances after the date of such statements.

Veeco Contacts:
Investors: Alex Delacroix | (516) 528-1020 | adelacroix@veeco.com
Media: Brenden Wright | (410) 984-2610 | bwright@veeco.com


FAQ

What did Veeco announce on November 5, 2025 regarding Propel®300 (VECO)?

Veeco announced an order for a Propel®300 MOCVD system for 300mm GaN-on-Si epitaxy from a major power IDM.

How does Propel®300 improve chip output compared with 200mm systems?

Veeco cites a 2.3x increase in chips per wafer when moving from 200mm to 300mm.

What GaN market growth figures are cited in the Veeco announcement for VECO investors?

The release cites Yole Group projecting a 35% CAGR from $555M in 2025 to $2.5B in 2030.

What technical advantages does Propel®300 offer for GaN power device makers?

Propel®300 features TurboDisc MOCVD, automated wafer handling, best-in-class uniformity, low defectivity, and long campaigns without in-situ cleaning.

How could the Propel®300 order affect VECO’s market position?

The order reinforces Veeco’s leadership in 300mm MOCVD technology and supports adoption of GaN-on-Si in power-device manufacturing.

Which end markets are expected to drive GaN demand mentioned in the Veeco release?

Veeco identifies automotive, industrial, and data center power-efficiency needs—including AI-driven data center power consumption—as growth drivers.
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