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Veeco Receives Propel®300 MOCVD System Order From Leading GaN-on-Si Power Semiconductor IDM

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Veeco (NASDAQ: VECO) received an order for a Propel®300 MOCVD system from a leading power semiconductor IDM for GaN epitaxy on 300mm Si wafers. The order reinforces Veeco’s position in 300mm MOCVD technology and follows prior Propel®300 shipments across compound semiconductor markets.

Veeco highlights a 2.3x chip-per-wafer advantage moving from 200mm to 300mm, compatibility with existing 300mm production lines, and features including TurboDisc MOCVD technology, automated wafer handling, best-in-class thickness and doping uniformity, low defectivity, and long campaigns without in-situ cleaning. Yole Group projects the GaN device market to grow at a 35% CAGR from $555M (2025) to $2.5B (2030), driven by automotive, industrial, and data center power-efficiency demand.

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Positive

  • Order received from leading power IDM for Propel®300
  • 2.3x chips per wafer shifting from 200mm to 300mm
  • Supports existing 300mm lines to lower device costs
  • GaN market projected 35% CAGR to $2.5B by 2030
  • TurboDisc MOCVD: thickness and doping uniformity
  • Long campaigns without in-situ cleaning reduce OOE per wafer

Negative

  • None.

News Market Reaction

+1.41%
1 alert
+1.41% News Effect

On the day this news was published, VECO gained 1.41%, reflecting a mild positive market reaction.

Data tracked by StockTitan Argus on the day of publication.

Supports Rapidly Growing GaN Device Market Driven by Demand for Power Efficiency for Data Center, Industrial, and Automotive Applications

PLAINVIEW, N.Y., Nov. 05, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (NASDAQ: VECO) announced today receipt of an order for a Propel®300 system from a major power semiconductor integrated device manufacturer (IDM) for gallium nitride (GaN) epitaxy on 300mm silicon (Si) wafers. This order cements Veeco’s position as a leader in 300mm MOCVD technology, building on years of experience including previous shipments of the Propel®300 platform for various applications across the compound semiconductor industry.

“Qualifying Propel®300 for 300mm GaN-on-Si epitaxy for power devices is a significant achievement in the path to widespread adoption of GaN technology,” commented Anil Vijayendran, Vice President, MOCVD Product Line Management. “Moving from 200mm to 300mm enables customers to achieve 2.3 times more chips per wafer, while allowing them to use existing 300mm production lines, and ultimately lower their device costs”

GaN’s high efficiency and superior thermal and switching properties, which can significantly reduce device and overall system size and weight, are accelerating its adoption in power semiconductor manufacturing. According to Yole Group, the GaN device market is expected to grow at a 35% CAGR from $555M in 2025 to $2.5B in 2030. Key to this growth will be the increased adoption of GaN technology in automotive, industrial, and data center applications, where the continuously rising power consumption requirements of AI workloads are fueling demand for more efficient power supplies.

Featuring Veeco’s proven MOCVD TurboDisc technology, Propel®300 combines exceptional performance with fully automated wafer handling to provide not only best-in-class thickness and doping uniformity but also low defectivity and high productivity. These benefits, together with its industry-renowned ease of use and long campaigns that do not require in-situ cleaning, contribute to Propel®300’s low cost of ownership per wafer.

About Veeco

Veeco (NASDAQ: VECO) is an innovative manufacturer of semiconductor process equipment. Our laser annealing, ion beam, metal organic chemical vapor deposition (MOCVD), single wafer etch & clean and lithography technologies play an integral role in the fabrication and packaging of advanced semiconductor devices. With equipment designed to optimize performance, yield and cost of ownership, Veeco holds leading technology positions in the markets we serve. To learn more about Veeco’s systems and service offerings, visit www.veeco.com.

To the extent that this news release discusses expectations or otherwise makes statements about the future, such statements are forward-looking and are subject to a number of risks and uncertainties that could cause actual results to differ materially from the statements made. These factors include the risks discussed in the Business Description and Management's Discussion and Analysis sections of Veeco's Annual Report on Form 10-K for the year ended December 31, 2024 and in our subsequent quarterly reports on Form 10-Q, current reports on Form 8-K and press releases. Veeco does not undertake any obligation to update any forward-looking statements to reflect future events or circumstances after the date of such statements.

Veeco Contacts:
Investors: Alex Delacroix | (516) 528-1020 | adelacroix@veeco.com
Media: Brenden Wright | (410) 984-2610 | bwright@veeco.com


FAQ

What did Veeco announce on November 5, 2025 regarding Propel®300 (VECO)?

Veeco announced an order for a Propel®300 MOCVD system for 300mm GaN-on-Si epitaxy from a major power IDM.

How does Propel®300 improve chip output compared with 200mm systems?

Veeco cites a 2.3x increase in chips per wafer when moving from 200mm to 300mm.

What GaN market growth figures are cited in the Veeco announcement for VECO investors?

The release cites Yole Group projecting a 35% CAGR from $555M in 2025 to $2.5B in 2030.

What technical advantages does Propel®300 offer for GaN power device makers?

Propel®300 features TurboDisc MOCVD, automated wafer handling, best-in-class uniformity, low defectivity, and long campaigns without in-situ cleaning.

How could the Propel®300 order affect VECO’s market position?

The order reinforces Veeco’s leadership in 300mm MOCVD technology and supports adoption of GaN-on-Si in power-device manufacturing.

Which end markets are expected to drive GaN demand mentioned in the Veeco release?

Veeco identifies automotive, industrial, and data center power-efficiency needs—including AI-driven data center power consumption—as growth drivers.
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