Vishay Intertechnology Gen 3 650 V and 1200 V SiC Schottky Diodes Increase Efficiency While Enhancing Electrical Insulation
Vishay Intertechnology (NYSE:VSH) has unveiled three new Gen 3 silicon carbide (SiC) Schottky diodes in the SlimSMA HV package. The new lineup includes the 1A VS-3C01EJ12-M3 and 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3 models, featuring 650V and 1200V options.
The diodes boast a minimum creepage distance of 3.2mm and maintain low capacitive charge down to 7.2 nC regardless of temperature. Key features include a low profile of 0.95mm, high operating temperature of +175°C, and reduced forward voltage drop to 1.30V. These components are designed for applications in server power supplies, energy systems, industrial drives, and X-ray generators.
Samples and production quantities are available now with 14-week lead times. The devices are RoHS-compliant, halogen-free, and meet JESD 201 class 2 whisker test requirements.
Vishay Intertechnology (NYSE:VSH) ha presentato tre nuovi diodi Schottky in carburo di silicio (SiC) di terza generazione nel package SlimSMA HV. La nuova gamma comprende i modelli 1A VS-3C01EJ12-M3 e 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3, disponibili con tensioni di 650V e 1200V.
I diodi offrono una distanza minima di creepage di 3,2mm e mantengono una bassa carica capacitiva fino a 7,2 nC indipendentemente dalla temperatura. Tra le caratteristiche principali figurano un profilo sottile di 0,95mm, un’elevata temperatura operativa di +175°C e una riduzione della caduta di tensione diretta a 1,30V. Questi componenti sono progettati per applicazioni in alimentatori per server, sistemi energetici, azionamenti industriali e generatori a raggi X.
Campioni e quantità di produzione sono disponibili ora con tempi di consegna di 14 settimane. I dispositivi sono conformi RoHS, privi di alogeni e rispondono ai requisiti del test JESD 201 classe 2 per i whisker.
Vishay Intertechnology (NYSE:VSH) ha lanzado tres nuevos diodos Schottky de carburo de silicio (SiC) de tercera generación en el paquete SlimSMA HV. La nueva línea incluye los modelos 1A VS-3C01EJ12-M3 y 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3, con opciones de 650V y 1200V.
Los diodos cuentan con una distancia mínima de creepage de 3,2 mm y mantienen una baja carga capacitiva de hasta 7,2 nC sin importar la temperatura. Las características clave incluyen un perfil bajo de 0,95 mm, una alta temperatura de operación de +175°C y una reducción en la caída de tensión directa a 1,30V. Estos componentes están diseñados para aplicaciones en fuentes de alimentación para servidores, sistemas energéticos, accionamientos industriales y generadores de rayos X.
Las muestras y cantidades de producción están disponibles ahora con plazos de entrega de 14 semanas. Los dispositivos cumplen con RoHS, son libres de halógenos y satisfacen los requisitos de la prueba JESD 201 clase 2 para whiskers.
Vishay Intertechnology (NYSE:VSH)는 SlimSMA HV 패키지에 새로운 3세대 실리콘 카바이드(SiC) 쇼트키 다이오드 3종을 출시했습니다. 신규 라인업에는 1A VS-3C01EJ12-M3 및 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3 모델이 포함되며, 650V 및 1200V 옵션을 제공합니다.
이 다이오드는 최소 크리피지 거리 3.2mm를 자랑하며 온도에 관계없이 7.2nC까지 낮은 정전 용량을 유지합니다. 주요 특징으로는 0.95mm의 낮은 프로파일, +175°C의 고온 동작, 그리고 1.30V로 낮아진 순방향 전압 강하가 있습니다. 이 부품들은 서버 전원 공급 장치, 에너지 시스템, 산업용 드라이브 및 엑스선 발생기 응용 분야에 적합합니다.
샘플 및 생산 수량은 현재 14주 리드 타임으로 제공 중입니다. 해당 장치는 RoHS 준수, 할로겐 프리이며 JESD 201 클래스 2 위스커 테스트 요구 사항을 충족합니다.
Vishay Intertechnology (NYSE:VSH) a dévoilé trois nouveaux diodes Schottky en carbure de silicium (SiC) de troisième génération dans le boîtier SlimSMA HV. La nouvelle gamme comprend les modèles 1A VS-3C01EJ12-M3 et 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3, disponibles en options 650V et 1200V.
Les diodes offrent une distance minimale de fuite de 3,2 mm et maintiennent une faible charge capacitive jusqu’à 7,2 nC, quelle que soit la température. Les principales caractéristiques incluent un profil bas de 0,95 mm, une haute température de fonctionnement de +175°C, et une chute de tension directe réduite à 1,30V. Ces composants sont conçus pour des applications dans les alimentations de serveurs, les systèmes énergétiques, les entraînements industriels et les générateurs de rayons X.
Les échantillons et les quantités de production sont disponibles dès maintenant avec un délai de livraison de 14 semaines. Les dispositifs sont conformes RoHS, sans halogènes, et répondent aux exigences du test JESD 201 classe 2 pour les whiskers.
Vishay Intertechnology (NYSE:VSH) hat drei neue Siliziumkarbid (SiC) Schottky-Dioden der dritten Generation im SlimSMA HV-Gehäuse vorgestellt. Die neue Produktreihe umfasst die Modelle 1A VS-3C01EJ12-M3 und 2A VS-3C02EJ07-M3/VS-3C02EJ12-M3 mit 650V- und 1200V-Optionen.
Die Dioden verfügen über einen minimalen Kriechstreckenabstand von 3,2 mm und behalten eine niedrige kapazitive Ladung von 7,2 nC unabhängig von der Temperatur bei. Zu den wichtigsten Merkmalen zählen ein flaches Profil von 0,95 mm, eine hohe Betriebstemperatur von +175°C und eine reduzierte Durchlassspannung von 1,30V. Diese Bauteile sind für Anwendungen in Server-Netzteilen, Energiesystemen, Industriemotorantrieben und Röntgengeneratoren konzipiert.
Muster und Produktionsmengen sind jetzt mit einer Lieferzeit von 14 Wochen verfügbar. Die Geräte sind RoHS-konform, halogenfrei und erfüllen die Anforderungen des JESD 201 Klasse 2 Whisker-Tests.
- Enhanced efficiency through low capacitive charge and temperature-invariant switching behavior
- Improved electrical isolation with 3.2mm creepage distance and high CTI ≥ 600
- Compact design with 0.95mm profile compared to 2.3mm for competing packages
- Immediate availability with defined 14-week lead times
- None.
Offered in the Compact SlimSMA HV (DO-221AC) Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm
MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high speed, hard-switching power designs.
For high voltage applications, the high creepage distance of the Vishay Semiconductors devices released today provides improved electrical isolation, while their SlimSMA HV package features a molding compound with a high CTI ≥ 600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95 mm compared to 2.3 mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2 nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high frequency applications. In addition, the devices have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30 V.
With a high operating temperature of +175 °C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generation and storage systems; industrial drives and tools; and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
RoHS-compliant and halogen-free, the diodes feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker test.
Device Specification Table:
| Part # | VS-3C01EJ12-M3 | VS-3C02EJ07-M3 | VS-3C02EJ12-M3 |
| IF (A) | 1 | 2 | 2 |
| VR (V) | 1200 | 650 | 1200 |
| VF at IF (V) | 1.35 | 1.30 | 1.35 |
| IR at VR at 175 C (μA) | 4.5 | 2.0 | 5.0 |
| QC (nC) | 7.5 | 7.2 | 13 |
| Configuration | SlimSMA HV (DO-221AC) | ||
| Package | Single | ||
Samples and production quantities of the new SiC diodes are available now, with lead times of 14 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720327323868
Links to datasheets:
http://www.vishay.com/ppg?97284 (VS-3C01EJ12-M3)
http://www.vishay.com/ppg?97287 (VS-3C02EJ07-M3)
http://www.vishay.com/ppg?97286 (VS-3C02EJ12-M3)
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
FAQ
What are the key specifications of Vishay's new Gen 3 SiC Schottky diodes?
What applications are VSH's new SiC Schottky diodes designed for?
What are the advantages of Vishay's new SlimSMA HV package?
When will Vishay's new SiC Schottky diodes be available?
