STOCK TITAN

Coherent Advances Silicon Carbide Thick Epitaxy Capabilities for High-Voltage AI Datacenter and Industrial Power Applications Up to 10kV

Rhea-AI Impact
(Moderate)
Rhea-AI Sentiment
(Positive)
Tags
AI

Coherent (NYSE: COHR) announced advances in silicon carbide (SiC) thick epitaxy enabling production of power devices up to 10 kV and demonstrating capability beyond 10 kV for AI datacenter and industrial power applications.

The 150mm and 200mm epitaxy platforms target higher efficiency, power density, and reliability for multi-megawatt datacenter power conversion and industrial electrification.

Loading...
Loading translation...

Positive

  • None.

Negative

  • None.

News Market Reaction – COHR

+8.21%
78 alerts
+8.21% News Effect
+5.1% Peak in 28 hr 18 min
+$4.42B Valuation Impact
$58.28B Market Cap
0.6x Rel. Volume

On the day this news was published, COHR gained 8.21%, reflecting a notable positive market reaction. Argus tracked a peak move of +5.1% during that session. Our momentum scanner triggered 78 alerts that day, indicating high trading interest and price volatility. This price movement added approximately $4.42B to the company's valuation, bringing the market cap to $58.28B at that time.

Data tracked by StockTitan Argus on the day of publication.

SAXONBURG, Pa., April 09, 2026 (GLOBE NEWSWIRE) -- Coherent Corp. (NYSE: COHR), a global leader in photonics, today announced advancements in its silicon carbide (SiC) epitaxy capabilities, enabling power devices up to 10kV for next-generation AI datacenter and industrial power applications.

As industrial electrification accelerates, demand is rising for more efficient, higher-voltage power systems across renewable energy, rail, fast-charging infrastructure, and grid infrastructure. Meanwhile, the growth of AI workloads is driving the need for ultra-efficient, high-power-density architectures in datacenters, where every gain in conversion efficiency reduces energy consumption and operating cost.

Coherent’s latest 150mm and 200mm thick epitaxy platforms support device architectures up to 10kV in production. These platforms have demonstrated capability extending even beyond 10kV, enabling improved performance in demanding operating environments. These advancements allow customers to develop more compact, energy-efficient power conversion systems for both multi-megawatt datacenters as well as industrial infrastructure, while meeting the reliability requirements of large-scale deployments.

“Next-generation datacenter power architectures and high-voltage industrial systems are key drivers for silicon carbide adoption,” said Gary Ruland, Senior Vice President, Silicon Carbide LLC. “Our new thick epitaxy capability for multi-kilovolt SiC devices enables customers to achieve higher efficiency and power density in critical applications such as energy infrastructure, high-capacity uninterruptible power supplies, and advanced power distribution systems in AI datacenters.”

Coherent continues to expand its silicon carbide technology portfolio, from substrates to advanced epitaxy, to support customers across industrial, automotive, and energy markets, including the rapidly growing segment of high-efficiency datacenter power systems, reinforcing its leadership in wide-bandgap semiconductor materials.

For more information, please visit:
https://www.coherent.com/materials/wide-bandgap-electronics/sic-substrates-epitaxy

About Coherent 

Coherent is the global photonics leader. We harness photons to drive innovation. Industry leaders in the datacenter, communications, and industrial markets rely on Coherent’s world-leading technology to fuel their own innovation and growth. Founded in 1971 and operating in more than 20 countries, Coherent brings the industry’s broadest, deepest technology stack; unmatched supply chain resilience; and global scale to help its customers solve their toughest technology challenges. For more information, visit us at coherent.com.

Media Contact: 
innovations@coherent.com 


FAQ

What did Coherent (COHR) announce about SiC epitaxy capabilities on April 9, 2026?

Coherent announced thick SiC epitaxy platforms (150mm and 200mm) supporting devices up to 10 kV. According to the company, these platforms have demonstrated capability beyond 10 kV for high-voltage AI datacenter and industrial power uses.

How will COHR's 10 kV SiC devices affect datacenter power efficiency?

Higher-voltage SiC devices can increase conversion efficiency and power density in datacenters. According to the company, the thick epitaxy enables more compact, energy-efficient multi-megawatt power conversion systems, reducing energy consumption and operating costs.

Which industries benefit from Coherent's SiC thick epitaxy announced April 9, 2026?

Primary beneficiaries include AI datacenters, renewable energy, rail, fast-charging infrastructure, and grid systems. According to the company, the technology targets high-voltage, high-efficiency power conversion and large-scale industrial deployments.

What wafer sizes support Coherent's new SiC epitaxy platforms (COHR)?

The new thick epitaxy capability runs on 150mm and 200mm wafer platforms. According to the company, these sizes support multi-kilovolt device architectures suitable for demanding operating environments and large-scale production.

Does Coherent claim the SiC platforms exceed 10 kV and what does that mean for customers?

Yes, Coherent reported capability extending beyond 10 kV, enabling improved performance in demanding environments. According to the company, this allows customers to develop higher-efficiency, compact power conversion systems that meet reliability needs for large deployments.