SK hynix Introduces Industry's First Commercial High NA EUV
SK hynix (OTC:HXSCL) has achieved a significant technological milestone by installing the industry's first High NA EUV lithography system for mass production at its M16 fabrication plant in Icheon, South Korea. The TWINSCAN EXE:5200B, developed by ASML, represents a major advancement in semiconductor manufacturing technology.
The new system enables 1.7x smaller transistors and 2.9x higher transistor densities compared to existing EUV systems, with a 40% improvement in NA from 0.33 to 0.55. This breakthrough will help SK hynix simplify its EUV process, accelerate next-generation memory development, and strengthen its position in high-value memory products, particularly for AI and next-generation computing markets.
SK hynix (OTC:HXSCL) ha raggiunto un importante traguardo tecnologico installando il primo impianto industriale di litografia EUV High NA per la produzione di massa presso lo stabilimento M16 di Icheon, Corea del Sud. Il TWINSCAN EXE:5200B, sviluppato da ASML, rappresenta un notevole progresso nella tecnologia di produzione dei semiconduttori.
Il nuovo sistema permette di ottenere transistor 1,7 volte più piccoli e densità di transistor 2,9 volte superiori rispetto agli attuali sistemi EUV, grazie a un miglioramento della NA del 40% (da 0,33 a 0,55). Questa innovazione aiuterà SK hynix a semplificare il processo EUV, accelerare lo sviluppo della memoria di nuova generazione e rafforzare la sua posizione nei prodotti di memoria ad alto valore, in particolare per l'IA e il computing di nuova generazione.
SK hynix (OTC:HXSCL) ha alcanzado un hito tecnológico importante al instalar el primer sistema de litografía EUV High NA para producción en masa en su planta M16 en Icheon, Corea del Sur. El TWINSCAN EXE:5200B, desarrollado por ASML, supone un avance relevante en la tecnología de fabricación de semiconductores.
El nuevo sistema permite transistores 1,7 veces más pequeños y densidades de transistores 2,9 veces mayores en comparación con los sistemas EUV actuales, con una mejora de la NA del 40% (de 0,33 a 0,55). Este progreso ayudará a SK hynix a simplificar su proceso EUV, acelerar el desarrollo de memorias de próxima generación y fortalecer su posición en productos de memoria de alto valor, especialmente para IA y la computación de nueva generación.
SK hynix (OTC:HXSCL)가 국내 이천의 M16 생산라인에 업계 최초로 High NA EUV 리소그래피 장비를 양산용으로 도입하며 중요한 기술적 성과를 달성했습니다. ASML이 개발한 TWINSCAN EXE:5200B는 반도체 제조기술의 큰 진전을 의미합니다.
이 신규 장비는 기존 EUV 장비 대비 트랜지스터를 1.7배 더 작게, 트랜지스터 집적도를 2.9배 높게 구현할 수 있으며, NA가 0.33에서 0.55로 40% 개선되었습니다. 이 성과는 SK hynix가 EUV 공정을 단순화하고 차세대 메모리 개발을 가속화하며, 특히 AI 및 차세대 컴퓨팅 시장을 위한 고부가가치 메모리 제품에서 경쟁력을 강화하는 데 기여할 것입니다.
SK hynix (OTC:HXSCL) a franchi une étape technologique majeure en installant le premier système de lithographie EUV High NA de l'industrie destiné à la production de masse dans son usine M16 à Icheon, Corée du Sud. Le TWINSCAN EXE:5200B, développé par ASML, représente une avancée significative dans la fabrication des semi‑conducteurs.
Le nouveau système permet des transistors 1,7 fois plus petits et des densités de transistors 2,9 fois supérieures par rapport aux systèmes EUV existants, avec une amélioration de la NA de 40% (de 0,33 à 0,55). Cette percée aidera SK hynix à simplifier son procédé EUV, accélérer le développement de mémoires de nouvelle génération et renforcer sa position sur les produits mémoire à forte valeur ajoutée, notamment pour l'IA et l'informatique de prochaine génération.
SK hynix (OTC:HXSCL) hat einen bedeutenden technologischen Meilenstein erreicht, indem es das erste High-NA-EUV-Lithographiesystem der Branche für die Massenproduktion in seinem Werk M16 in Icheon, Südkorea, installiert hat. Der von ASML entwickelte TWINSCAN EXE:5200B stellt einen großen Fortschritt in der Halbleiterfertigung dar.
Das neue System ermöglicht 1,7-mal kleinere Transistoren und eine 2,9-mal höhere Transistordichte im Vergleich zu bestehenden EUV-Systemen und erzielt eine NA-Verbesserung um 40% (von 0,33 auf 0,55). Dieser Durchbruch wird SK hynix dabei helfen, den EUV-Prozess zu vereinfachen, die Entwicklung der nächsten Speichergeneration zu beschleunigen und seine Position im Bereich hochwertigen Speicherprodukten, insbesondere für KI und Next‑Generation‑Computing, zu stärken.
- First company in the industry to implement High NA EUV technology for mass production
- Achieves 1.7x smaller transistors and 2.9x higher transistor densities compared to existing systems
- 40% improvement in Numerical Aperture (NA) from 0.33 to 0.55
- Will enhance product performance and cost competitiveness through simplified EUV process
- Significant capital investment required for new EUV equipment implementation
- Complex technology transition may affect initial production yields
- Brings ASML's EXE:5200B, critical system for next-generation chips, to M16 fab
- Improved precision, density by 1.7x and 2.9x to help competitive production
- Company to lead AI memory with cutting-edge tech required by key industries
* High NA EUV(High Numerical Aperture Extreme Ultraviolet Lithography): a next-generation lithography system that delivers much better resolution by applying a larger NA**, compared with an earlier EUV system. By enabling the world's finest patterns, it is expected to help shrink the pattern and improve density |
*NA(Numerical Aperture):a measure of an optical system's ability to collect light. A higher NA enables a more precise pattern |
At an event to commemorate the assembly of the system, SK hynix's Head of R&D Cha Seon Yong, Head of Manufacturing Technology Lee Byoungki and ASML's Head of Customer Team SK hynix-Japan Kim Byeong-Chan celebrated the introduction of the equipment to produce next-generation DRAM.
The move lays the foundation for a swift development and supply of the cutting-edge products that meet customer demand amid intense competition of the global semiconductor industry. SK hynix aims to enhance credibility and stability of the global supply chain through close collaboration with business partners.
A sophisticated process technology to scale memory cells is critical to advance productivity and product performance. A more sophisticated pattern leads to an increase in the number of chips produced from a wafer and an improvement in power efficiency and performance.
SK hynix has been expanding the scope of EUV adoption for production of the most advanced DRAM since the first introduction of the technology in 2021 for the 1anm, the fourth generation of the 10nm tech. The assembly of the next-generation technology system that outperforms the existing EUV equipment comes amid the company's efforts to prepare for the industry's requirement for extreme scaling and high density.
The TWINSCAN EXE:5200B, the first model for volume production of ASML's High NA EUV product line, enables printing of transistors 1.7 times smaller and achievement of transistor densities 2.9 times higher, compared with the existing EUV system, with a
With the adoption of the new system, SK hynix plans to simplify the existing EUV process and accelerate the development of the next-generation memory to advance product performance and cost competitiveness. The company also aims to enhance its position in the high-value memory product market and make its technological leadership stronger.
"High NA EUV is a critical technology that opens the next chapter of the semiconductor industry," said Kim at ASML. "ASML will closely collaborate with SK hynix to bring forward the innovation of the next-generation memory."
"We expect the addition of the critical infrastructure to bring our technological vision we have been pursuing into reality," said Cha at SK hynix. "We aim to enhance our leadership in the AI memory space with the cutting-edge technology required by the fast-growing AI and next-generation computing markets."
About SK hynix Inc.
SK hynix Inc., headquartered in
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SOURCE SK hynix Inc.
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