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Marvell Develops Industry's First 2nm Custom SRAM for Next-Generation AI Infrastructure Silicon

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Marvell Technology (NASDAQ: MRVL) has introduced the industry's first 2nm custom Static Random Access Memory (SRAM), designed to enhance the performance of custom XPUs and devices for cloud data centers and AI clusters. The innovative SRAM delivers up to 6 gigabits of high-speed memory while operating at up to 3.75 GHz. Key benefits include up to 15% total die area savings and 66% reduction in on-chip memory standby power consumption. The custom SRAM achieves the industry's highest bandwidth per square millimeter, allowing chip designers to integrate more compute cores, expand memory, or reduce device size. This development is part of Marvell's broader custom technology platform strategy, which includes previous innovations like CXL technology and custom HBM technology, aimed at improving memory hierarchy performance in accelerated infrastructure.
Marvell Technology (NASDAQ: MRVL) ha presentato il primo Static Random Access Memory (SRAM) personalizzato a 2 nm del settore, progettato per migliorare le prestazioni di XPUs personalizzati e dispositivi destinati a data center cloud e cluster AI. Questa innovativa SRAM offre fino a 6 gigabit di memoria ad alta velocità, funzionando a frequenze fino a 3,75 GHz. I principali vantaggi includono un risparmio fino al 15% della superficie totale del chip e una riduzione del 66% del consumo di energia in standby della memoria on-chip. La SRAM personalizzata raggiunge la più alta larghezza di banda per millimetro quadrato del settore, consentendo ai progettisti di chip di integrare più core di calcolo, ampliare la memoria o ridurre le dimensioni del dispositivo. Questo sviluppo fa parte della più ampia strategia di piattaforma tecnologica personalizzata di Marvell, che comprende innovazioni precedenti come la tecnologia CXL e la tecnologia HBM personalizzata, mirate a migliorare le prestazioni della gerarchia di memoria nelle infrastrutture accelerate.
Marvell Technology (NASDAQ: MRVL) ha presentado la primera memoria estática de acceso aleatorio (SRAM) personalizada de 2 nm en la industria, diseñada para mejorar el rendimiento de XPUs personalizadas y dispositivos para centros de datos en la nube y clústeres de IA. Esta innovadora SRAM ofrece hasta 6 gigabits de memoria de alta velocidad, operando a frecuencias de hasta 3,75 GHz. Entre sus beneficios clave se incluyen un ahorro de hasta el 15% en el área total del chip y una reducción del 66% en el consumo de energía en modo de espera de la memoria integrada. La SRAM personalizada logra el mayor ancho de banda por milímetro cuadrado de la industria, lo que permite a los diseñadores de chips integrar más núcleos de cómputo, ampliar la memoria o reducir el tamaño del dispositivo. Este desarrollo forma parte de la estrategia más amplia de plataforma tecnológica personalizada de Marvell, que incluye innovaciones previas como la tecnología CXL y la tecnología HBM personalizada, destinadas a mejorar el rendimiento de la jerarquía de memoria en infraestructuras aceleradas.
Marvell Technology(NASDAQ: MRVL)는 업계 최초의 2nm 맞춤형 정적 임의 접근 메모리(SRAM)를 선보였습니다. 이 SRAM은 클라우드 데이터 센터 및 AI 클러스터용 맞춤형 XPU와 장치의 성능 향상을 위해 설계되었습니다. 혁신적인 SRAM은 최대 3.75GHz에서 작동하며 최대 6기가비트의 고속 메모리를 제공합니다. 주요 이점으로는 총 칩 면적을 최대 15% 절감하고, 칩 내 메모리 대기 전력 소비를 66% 줄인 점이 있습니다. 맞춤형 SRAM은 업계 최고 수준의 평방 밀리미터당 대역폭을 달성하여 칩 설계자가 더 많은 연산 코어를 통합하거나 메모리를 확장하거나 장치 크기를 줄일 수 있게 합니다. 이 개발은 CXL 기술과 맞춤형 HBM 기술과 같은 이전 혁신을 포함하는 Marvell의 광범위한 맞춤형 기술 플랫폼 전략의 일부로, 가속화된 인프라에서 메모리 계층 성능 향상을 목표로 합니다.
Marvell Technology (NASDAQ : MRVL) a introduit la première mémoire statique à accès aléatoire (SRAM) personnalisée en 2 nm de l'industrie, conçue pour améliorer les performances des XPUs personnalisés et des dispositifs destinés aux centres de données cloud et aux clusters d'IA. Cette SRAM innovante offre jusqu'à 6 gigabits de mémoire haute vitesse tout en fonctionnant à une fréquence allant jusqu'à 3,75 GHz. Les principaux avantages incluent jusqu'à 15 % d'économie de surface totale de la puce et une réduction de 66 % de la consommation d'énergie en veille de la mémoire intégrée. La SRAM personnalisée atteint la plus haute bande passante par millimètre carré de l'industrie, permettant aux concepteurs de puces d'intégrer davantage de cœurs de calcul, d'étendre la mémoire ou de réduire la taille des dispositifs. Ce développement s'inscrit dans la stratégie plus large de plateforme technologique personnalisée de Marvell, qui comprend des innovations antérieures telles que la technologie CXL et la technologie HBM personnalisée, visant à améliorer les performances de la hiérarchie mémoire dans les infrastructures accélérées.
Marvell Technology (NASDAQ: MRVL) hat den branchenweit ersten kundenspezifischen 2-nm-Static-Random-Access-Memory (SRAM) vorgestellt, der darauf ausgelegt ist, die Leistung von kundenspezifischen XPUs und Geräten für Cloud-Datenzentren und KI-Cluster zu verbessern. Der innovative SRAM bietet bis zu 6 Gigabit Hochgeschwindigkeitsspeicher und arbeitet mit bis zu 3,75 GHz. Zu den wichtigsten Vorteilen zählen eine Einsparung von bis zu 15 % der gesamten Chipfläche und eine Reduzierung des Standby-Stromverbrauchs des On-Chip-Speichers um 66 %. Der kundenspezifische SRAM erreicht die höchste Bandbreite pro Quadratmillimeter der Branche, was es Chip-Designern ermöglicht, mehr Rechenkernen zu integrieren, den Speicher zu erweitern oder die Gerätegröße zu reduzieren. Diese Entwicklung ist Teil der umfassenderen Strategie von Marvell für kundenspezifische Technologieplattformen, zu der auch frühere Innovationen wie CXL-Technologie und kundenspezifische HBM-Technologie gehören, die darauf abzielen, die Leistung der Speicherhierarchie in beschleunigten Infrastrukturen zu verbessern.
Positive
  • Achieves industry's highest bandwidth per square millimeter with up to 6 gigabits of high-speed memory
  • Enables up to 15% recovery of total die area in 2nm designs
  • Reduces on-chip memory standby power consumption by up to 66%
  • Operates at high speeds of up to 3.75 GHz
  • Provides flexibility for designers to optimize compute cores, memory, or device size
Negative
  • None.

Insights

Marvell's 2nm custom SRAM breakthrough enables significant AI chip improvements through memory efficiency, area savings, and reduced power consumption.

Marvell's announcement of the industry's first 2nm custom SRAM represents a significant technical achievement in the semiconductor space, particularly for AI infrastructure. The new technology delivers up to 6 gigabits of high-speed memory while providing 15% die area savings and reducing standby power consumption by up to 66%.

The technical implications are substantial. By achieving the highest bandwidth per square millimeter in the industry, Marvell is addressing one of the critical bottlenecks in AI chip design. The reclaimed silicon real estate gives chip designers valuable flexibility - they can add more compute cores, expand memory capacity, or reduce overall chip size and cost depending on specific application requirements.

This innovation aligns with the industry's post-Moore's Law strategy where performance gains come less from transistor scaling and more from specialized design optimizations. The 3.75 GHz operating frequency is particularly impressive for on-chip SRAM at the 2nm node.

Marvell's holistic approach to memory hierarchy optimization is noteworthy. The company has systematically addressed memory challenges at multiple levels: on-die SRAM (this announcement), package-level with custom HBM technology, and system-level with their CXL technology. This comprehensive strategy positions Marvell strongly in the custom silicon era where chip design increasingly focuses on workload-specific optimizations rather than general-purpose computing.

For AI applications specifically, memory bandwidth and capacity are critical constraints. This custom SRAM technology helps alleviate these bottlenecks while simultaneously addressing power efficiency - another major challenge in large-scale AI deployments. The technology appears particularly valuable for inference workloads where reduced latency and power consumption are paramount.

  • Industry's highest bandwidth per sq mm with up to 6 gigabits of high-speed memory
  • Saves up to 15% of total die area and reduces on-chip memory standby power by up to 66%
  • Expands Marvell custom technology platform to transform the performance and economics of AI infrastructure

SANTA CLARA, Calif., June 17, 2025 /PRNewswire/ -- Marvell Technology, Inc. (NASDAQ: MRVL), a leader in data infrastructure semiconductor solutions expanded its custom technology platform with the launch of the industry's first 2nm custom Static Random Access Memory (SRAM), designed to boost the performance of custom XPUs and devices powering cloud data centers and AI clusters. Combining advanced custom circuitry and software from Marvell with core SRAM and cutting-edge 2nm process technology, Marvell® custom SRAM delivers up to 6 gigabits of high-speed memory while significantly reducing memory power consumption and die area at comparable densities.

Custom SRAM is the latest Marvell innovation designed to enhance memory hierarchy performance within accelerated infrastructure. Marvell previously introduced its CXL technology for integration into custom silicon to add terabytes of memory and supplemental compute capacity to cloud servers and unveiled custom HBM technology that increases memory capacity by up to 33% while reducing the space and power required for dense high-bandwidth memory (HBM) stacks inside XPUs.

Delivering the highest bandwidth per square millimeter in the industry, Marvell custom SRAM enables chip designers to recover up to 15% of the total area of a 2nm design. This recovered silicon real estate can be leveraged to integrate more compute cores, expand memory, shrink device size and cost, or achieve a tailored balance to meet specific performance power, application or TCO objectives. Built on an innovative data path and architecture, Marvell custom SRAM also consumes up to 66% less power than standard on-chip SRAM at equivalent densities, while operating at up to 3.75 GHz.

"Custom is the future of AI infrastructure. The methodologies and technologies used by hyperscalers today to develop cutting-edge custom XPUs will percolate to more customers, more classes of devices, and more applications," said Will Chu, senior vice president of Custom Cloud Solutions at Marvell. "We look forward to collaborating with our partners and customers creating the leading technology portfolio for the custom era."

"Memory remains one of the biggest challenges for AI clusters and clouds. These systems need as much memory as they can get as fast as they can," said Alan Weckel, co-founder of the 650 Group. "Marvell's holistic approach to the problem of improving memory performance at every available juncture—on the die, inside the chip package, and inside the system—is compelling and underscores the gains that become possible through customization."

A Foundation for the Custom Silicon Era

Custom SRAM is the latest extension of the Marvell custom technology platform for developing chips in a post-Moore's Law world. For over 50 years, advances in semiconductor performance and power were primarily achieved through shrinking the size of transistors. With the costs and challenges of transistor scaling increasing dramatically, semiconductor companies and their customers are customizing silicon to better serve a customer's unique infrastructure architecture, experimenting with new chip and packaging breakthroughs, and rethinking assumptions about chip design to extend the boundaries of computing.

Marvell Custom Platform Strategy

The Marvell custom platform strategy seeks to deliver breakthrough results through unique semiconductor designs and innovative approaches. By combining expertise in system and semiconductor design, advanced process manufacturing, and a comprehensive portfolio of semiconductor platform solutions and IP—including electrical and optical serializer/deserializers (SerDes), die-to-die interconnects for 2D and 3D devices, silicon photonics, co-packaged copper, custom HBM, system-on-chip (SoC) fabrics, optical IO, and compute fabric interfaces such as PCIe Gen 7— Marvell is able to create platforms in collaboration with customers that transform infrastructure performance, efficiency and value. 

About Marvell

To deliver the data infrastructure technology that connects the world, we're building solutions on the most powerful foundation: our partnerships with our customers. Trusted by the world's leading technology companies for over 25 years, we move, store, process and secure the world's data with semiconductor solutions designed for our customers' current needs and future ambitions. Through a process of deep collaboration and transparency, we're ultimately changing the way tomorrow's enterprise, cloud, automotive, and carrier architectures transform—for the better.

Marvell and the M logo are trademarks of Marvell or its affiliates. Please visit www.marvell.com for a complete list of Marvell trademarks. Other names and brands may be claimed as the property of others.

This press release contains forward-looking statements within the meaning of the federal securities laws that involve risks and uncertainties. Forward-looking statements include, without limitation, any statement that may predict, forecast, indicate or imply future events, results or achievements. Actual events, results or achievements may differ materially from those contemplated in this press release. Forward-looking statements are only predictions and are subject to risks, uncertainties and assumptions that are difficult to predict, including those described in the "Risk Factors" section of our Annual Reports on Form 10-K, Quarterly Reports on Form 10-Q and other documents filed by us from time to time with the SEC. Forward-looking statements speak only as of the date they are made. Readers are cautioned not to put undue reliance on forward-looking statements, and no person assumes any obligation to update or revise any such forward-looking statements, whether as a result of new information, future events or otherwise.

For further information, contact:
Kim Markle
pr@marvell.com

Essential technology, done right (PRNewsfoto/Marvell Technology Group Ltd.)

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SOURCE Marvell

FAQ

What are the key features of Marvell's new 2nm custom SRAM technology?

Marvell's 2nm custom SRAM delivers up to 6 gigabits of high-speed memory, operates at 3.75 GHz, saves up to 15% die area, and reduces power consumption by up to 66%.

How does Marvell's custom SRAM improve power efficiency?

The custom SRAM consumes up to 66% less power than standard on-chip SRAM at equivalent densities while maintaining high performance.

What benefits does Marvell's 2nm SRAM provide for chip designers?

It enables designers to recover up to 15% of total die area, which can be used to add compute cores, expand memory, reduce device size, or optimize for specific performance requirements.

How does this SRAM development fit into Marvell's broader strategy?

It's part of Marvell's custom technology platform strategy, which includes CXL and HBM technologies, aimed at improving memory hierarchy performance for AI and cloud infrastructure.

What is the significance of MRVL's 2nm SRAM for AI infrastructure?

It provides higher memory bandwidth and power efficiency crucial for AI clusters and cloud data centers, while enabling customization options for specific infrastructure needs.
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