Magnachip Launches New 6th-Generation 600V SJ MOSFETs for AI Servers and EV Charging Applications

Key Terms

super junction (sj) mosfet technical

A super junction (SJ) MOSFET is a type of power transistor designed for high-voltage switching that arranges alternating positive and negative semiconductor pillars to conduct current more efficiently than traditional designs. For investors, it matters because SJ MOSFETs enable smaller, cooler, and more energy-efficient power supplies and electric systems — like widening a highway to reduce traffic — which can lower costs, improve product performance, and drive demand in industries from consumer electronics to electric vehicles.

rds(on) technical

rds(on) is the electrical resistance of a power transistor (usually a MOSFET) when it is switched fully on; think of it as how narrow a pipe the current must flow through. Lower rds(on) means less energy lost as heat, better efficiency, and less cooling or larger batteries required. Investors watch rds(on) because it influences product performance, power consumption, component cost and reliability — all of which can affect margins and competitive position.

zener diode technical

An electronic component that acts like a built-in safety valve for voltage: it normally blocks electricity in one direction but will allow current to flow in reverse once the voltage reaches a specific, controlled level. Investors care because zener diodes are key parts in power regulation and protection for many electronic products; their availability, cost, and technological improvements can affect manufacturing reliability, product performance and a company’s supply-chain costs and margins.

fast recovery body diode technical

A fast recovery body diode is a built-in one-way electrical path inside certain power transistors that stops conducting quickly after the current direction changes, like a door that snaps shut instead of swinging slowly. For investors, this matters because faster shutdowns reduce energy loss, heat and interference in power electronics, improving efficiency and reliability of products such as electric vehicles, chargers and data-center equipment—factors that can influence product competitiveness and supplier margins.

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• Designed for High-Efficiency Power Systems in AI Servers, EV Chargers and Industrial Applications
• Low RDS(ON), Fast Recovery Body Diode and Integrated Zener Diode for Enhanced Performance and Reliability

SEOUL, South Korea--(BUSINESS WIRE)-- Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the introduction of two new 6th-generation 600V Super Junction (SJ) MOSFETs designed to meet the growing performance and efficiency requirements of AI servers, EV charging systems and industrial power applications.

Magnachip’s new 6th-generation 600V SJ MOSFETs for AI server, EV charging and industrial power applications.

The new products feature low RDS(ON) values of 36mΩ and 37mΩ, helping reduce conduction losses and improve overall power conversion efficiency. In addition, both devices integrate a Zener diode between the gate and source terminals to provide enhanced protection against electrostatic discharge (ESD), thereby improving device reliability. The chip size has also been significantly reduced compared with the previous generation, contributing to improved integration and design flexibility.

The MMTB60R037G6FZVRH incorporates a Fast Recovery Body Diode, which helps reduce reverse recovery losses and improve switching performance in high-frequency power conversion systems. These characteristics make it well suited for AI server power supplies, where efficiency, thermal management and power density are critical design considerations.

Both devices are offered in a TOLL package and are designed for high-power, high-current applications. They also feature a Kelvin Source configuration, which reduces parasitic inductance and improves switching stability.

The growing demand for energy-efficient power conversion solutions across AI servers, EV charging systems and industrial power supplies is driving the adoption of advanced power semiconductors. Higher efficiency, improved thermal performance and increased power density have become critical requirements for next-generation power systems.

According to Omdia, the discrete semiconductor market within computing & data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of approximately 9%. The growing adoption of high-density, high-efficiency server power architectures is expected to further drive demand for power discrete devices, including SJ MOSFETs.

“As demand continues to grow for more efficient and reliable power systems across AI infrastructure, EV charging systems and industrial applications, power semiconductor performance becomes increasingly important,” said Hyuk Woo, Chief Technology Officer of Magnachip. “Our new 6th-generation 600V SJ MOSFETs combine low on-resistance, enhanced switching characteristics and robust reliability features to help customers improve efficiency and power density in next-generation power designs.”

The new SJ MOSFETs are suitable for a wide range of power applications requiring high efficiency and reliability, including AI server power supplies, industrial power supplies, telecom infrastructure and EV charging systems.

Related Links

Power Solutions > SJ MOSFETs > 600V

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About Magnachip Semiconductor

Magnachip is a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions for various applications, including industrial, automotive, communication, consumer and computing. The Company provides a broad range of standard products to customers worldwide. Magnachip, with about 45 years of operating history, owns a substantial number of registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.

View source version on businesswire.com: https://www.businesswire.com/news/home/20260622718780/en/

Mike Bishop
United States (Investor Relations)
Bishop IR, LLC
Tel. +1-415-891-9633
mike@bishopir.com

Kyeongah Cho
Global Marketing Communication
Magnachip Semiconductor
Tel. +82-2-6903-3179
pr@magnachip.com

Source: Magnachip Semiconductor Corporation