Kioxia and Sandisk Unveil New High-Performance QLC 3D Flash Memory Technology Designed for AI and Data-Intensive Applications

Key Terms

qlc technical

QLC stands for quad-level cell NAND flash, a type of solid-state storage that stores four bits of data in each memory cell. It lets manufacturers pack more capacity into the same space but generally reduces speed and the number of times the cell can be rewritten. For investors, QLC matters because it influences product pricing, manufacturing costs, profit margins and potential reliability or warranty risks—similar to fitting more items on a shelf at the expense of ease of access and durability.

3d flash memory technical

3D flash memory is a type of non‑volatile storage where memory cells are stacked vertically like floors in a building instead of spread out on a single layer, allowing more data to fit into the same chip area. For investors, it matters because this stacking lowers cost per gigabyte and can improve performance and battery life in devices, affecting manufacturers’ margins, product competitiveness, and demand across consumer and data‑center markets.

cmos directly bonded to array (cba) technical

A CMOS directly bonded to array (CBA) is a manufacturing approach where a CMOS readout chip is physically and electrically bonded directly to a sensor or detector array so the electronics sit immediately beneath each pixel. Think of it like pairing each camera cell with its own tiny amplifier glued on the back; this reduces wiring length, noise and power loss and can improve image clarity, speed and device compactness—features that affect product performance, manufacturing complexity and cost.

nand technical

NAND is a type of non-volatile memory used to store data in electronic devices such as phones, SSDs, and tablets; it keeps information even when power is off. Think of it as a digital filing cabinet made of tiny cells where data is written, erased and rewritten. Investors watch NAND because its supply, demand and manufacturing costs drive prices, company revenues and profit margins across the semiconductor and consumer electronics industries.

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Innovative 9^th-Generation architecture pairs advanced CMOS technology with a proven memory-array platform to meet the fast pace of AI while enabling capital-efficient NAND scaling

MILPITAS, Calif. & TOKYO--(BUSINESS WIRE)-- Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A), and Sandisk Corporation (Nasdaq: SNDK) today unveiled their new 9th-generation, high-performance 2Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. The technology demonstrates how architectural innovation can help storage advance at the fast pace required by AI-driven workloads, while supporting more capital-efficient manufacturing.

Leveraging the companies’ CMOS directly Bonded to Array (CBA) architecture¹, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8^th-generation 2Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements and better write and read power efficiency. And it also delivers a NAND interface speed of 4.8Gb/s ², a 33% improvement over 8th-generation devices.

Chief Technology Officer at Kioxia, Hideshi Miyajima, said, "As AI continues to underpin the advancement of society, its applications are expanding from generative AI to agent-based and physical AI, while the use of data is becoming increasingly diverse and sophisticated. By leveraging its proven memory cell technology together with the latest CMOS technology, Kioxia is accelerating the development of its 9th-generation flash memory. This approach enables us to deliver high performance while keeping investment costs relatively low."

"The rapid adoption of AI is accelerating the transition of storage interfaces, creating demand for memory technologies that can evolve more quickly than in previous technology cycles," said Alper Ilkbahar, Chief Technology Officer at Sandisk. "Our 9th-generation QLC technology demonstrates the unique flexibility of CBA, to accelerate innovation by independently advancing CMOS and memory technologies. We are bringing new capabilities to market more quickly with exceptional capital efficiency."

The introduction of the 9th-generation QLC 3D flash memory technology marks an important milestone in the evolution of the 3D flash memory roadmap and highlights the continued strength of the collaboration between Kioxia and Sandisk. By maximizing the flexibility of their CBA platform, the companies are creating new opportunities for NAND innovation and helping customers address the growing storage demands of the AI era.

1. Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together.
2. 1Gb/s is calculated as 1,000,000,000 bits/second. This value is obtained under our specific test environment and may vary depending on use conditions.
   
   

• Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits.
  
  

• Company names, product names, and service names may be trademarks of third-party companies.

About Kioxia

Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.

About Sandisk

Sandisk (Nasdaq: SNDK) delivers innovative Flash solutions and advanced memory technologies that meet people and businesses at the intersection of their aspirations and the moment, enabling them to keep moving and pushing possibility forward. Follow Sandisk on Instagram, Facebook, X, LinkedIn, YouTube. Join TeamSandisk on Instagram.

SANDISK and the SANDISK logo are registered trademarks or trademarks of Sandisk Corporation or its affiliates in the US and/or other countries. All other marks are the property of their respective owners. Product specifications subject to change without notice. Pictures shown may vary from actual products.

© 2026 Sandisk Corporation or its affiliates. All rights reserved.

Forward-Looking Statements

This press release contains forward-looking statements within the meaning of U.S. federal securities laws, including, among others, statements regarding expectations for: Sandisk Corporation’s and Kioxia Holdings Corporation’s 9th-generation, high-performance QLC 3D flash memory technology, including its technological advancements, design and device innovation, enhanced performance and capabilities, and future efficiencies; the evolution of storage interfaces and demand for memory technologies; and the ability of the companies’ technology to support AI-driven workloads and address growing storage demands, while supporting more capital-efficient manufacturing and NAND scaling. These forward-looking statements are based on current expectations and are subject to risks and uncertainties that could cause actual results to differ materially from those expressed or implied in the forward-looking statements.

Key risks and uncertainties that could cause actual results to differ materially from those expressed or implied in the forward-looking statements include: adverse changes in global or regional economic conditions, including the impact of evolving trade policies, tariff regimes and trade wars; volatility in demand for Sandisk’s products; pricing trends and fluctuations in average selling prices; inflation; changes in interest rates and a potential economic recession; the impact of business and market conditions; the impact of competitive products and pricing; the development and introduction of products based on new technologies and management of technology transitions; risks associated with strategic initiatives, including restructurings, acquisitions, divestitures, cost saving measures and joint ventures; risks related to product defects; difficulties or delays in manufacturing or other supply chain disruptions; reliance on strategic relationships with key partners, including Kioxia Corporation; risks related to long-term agreements; fluctuation of operating results, including due to changes in demand, industry cycle and timing of customer deployments, and ability to accurately forecast demand; the attraction, retention and development of skilled management and technical talent; risks associated with the use of artificial intelligence in business operations; changes to relationships with key customers or consolidation among the customer base; compromise, damage or interruption from cybersecurity incidents or other data system security risks; reliance on intellectual property; fluctuations in currency exchange rates; actions by competitors; risks related to Sandisk’s share repurchase program; risks associated with compliance with changing legal and regulatory requirements; and other risks and uncertainties listed in Sandisk’s filings with the Securities and Exchange Commission, including its Annual Report on Form 10-K filed with the SEC on August 21, 2025 and Quarterly Reports on Form 10-Q, to which your attention is directed. You should not place undue reliance on these forward-looking statements, which speak only as of the date hereof, and Sandisk undertakes no obligation to update or revise these forward-looking statements to reflect new information or events, except as required by law.

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Sandisk Contacts:
Investors: investors@sandisk.com
Media: mediainquiries@sandisk.com

Kioxia Contact:
Media: kioxia-hd-pr@kioxia.com

Source: Sandisk Corporation