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Transphorm, Inc. (OTCQB: TGAN) will present at the 24th Annual Needham Growth Conference on January 12, 2022, at 11:00 a.m. Pacific Time. The event will be virtual, and management will be available for investor meetings throughout the day. Transphorm is a leader in gallium nitride (GaN) power conversion products, boasting a robust IP portfolio of over 1,000 patents. Their innovative GaN semiconductor technology offers more than 99% efficiency and significant cost savings. For more information, visit www.transphormusa.com.
Transphorm, Inc. (OTCQX: TGAN) has successfully closed a $12.9 million private placement, raising a total of $45.9 million in equity financing over the past two months. This funding involves the issuance of 1,673,152 shares at $7.71 each, accompanied by warrants for 348,649 shares at an exercise price of $9.25. The company aims to uplist on Nasdaq, leveraging its substantial portfolio of over 1,000 patents in gallium nitride (GaN) technology to capitalize on the fast-growing power conversion market.
Transphorm (OTC-PINK:TGAN) announces that its co-founder and CTO, Umesh Mishra, Ph.D., received the IEEE Jun-ichi Nishizawa Medal for his contributions to GaN-based electronics. This is Mishra's second IEEE award, further establishing his legacy in GaN technology.
Transphorm is recognized for its advancements in GaN power conversion solutions, including automotive-qualified devices and a significant IP portfolio with over 1,000 patents. The company aims for 200% annual product revenue growth through 2023, with product revenue increasing for seven consecutive quarters.
Transphorm Inc. (OTCQX: TGAN) announced that its management will present at Oppenheimer’s Annual 5G Summit on December 14, 2021, at 8:35 a.m. Pacific Time. This virtual event will include a live fireside chat, with management available for investor meetings throughout the day. Transphorm is recognized for its high reliability gallium nitride (GaN) power conversion products and has a significant patent portfolio in the field. Investors can access the live webcast and replay via the company's Investor Relations page.
Transphorm, Inc. (OTCQX: TGAN) has launched the TDTTP2500B066B-KIT, a 2.5 kW AC-to-DC evaluation board featuring the new SuperGaN Gen IV D2PAK FET. This board allows for quick swaps between different power levels, making it ideal for Data Center and Broad Industrial power supply applications. It integrates Microchip’s dsPIC33CK digital signal controller, enabling fast development and customizable firmware. The board is now available at Digi-Key and Mouser, enhancing Transphorm's portfolio in the GaN power conversion market.
Transphorm, Inc. (TGAN) reported a strong fiscal Q2 2022, achieving record product revenue of $11.3 million, a significant increase from $1.9 million in Q2 2021. This marks the seventh consecutive quarter of growth, with a 30% year-over-year rise. Key highlights include the conversion of $15.6 million debt to equity and a $1.4 million contract from DARPA. The company also completed $33 million in equity financing. Notably, GAAP net income reached $6 million ($0.15 per share), up from losses in previous quarters. Transphorm aims to uplist its stock to NASDAQ in the near future.
Transphorm Inc. (OTCQX: TGAN) announced the successful completion of AEC-Q101 stress tests for its SuperGaN® Gen IV 35 milliohm device, marking its third automotive-qualified product line. This device, the TP65H035G4WSQA, operates at a junction temperature of 175°C, surpassing current silicon MOSFET ratings. According to OMDIA, the early adoption of GaN transistors in the automotive market could exceed $100 million by 2025. The new device promises enhanced efficiency, reduced power loss, and improved EMI handling, positioning Transphorm favorably in the multibillion-dollar automotive sector.
Transphorm (OTC-PINK:TGAN) announces a strategic partnership with Sino-American Silicon Products Inc. (SAS) and GlobalWafers Co., Ltd. (GWC) to enhance its supply chain in the GaN market. The partnership includes a US$15 million equity investment by SAS, which follows a previous US$5 million investment. GWC will supply GaN epiwafers, boosting Transphorm's internal capacity for production. The partnership targets growth in various sectors, including electric vehicles and fast chargers, signaling a multi-billion-dollar opportunity for Transphorm.
Transphorm, Inc. (OTCQX: TGAN) announced the closing of a $23 million equity financing through a private placement of 4.6 million shares at $5.00 each, which includes warrants for additional shares. This financing, combined with the recent conversion of $15.6 million debt by Yaskawa Electric to common stock, enhances shareholder equity by over $37 million. The company aims to uplist on Nasdaq, leveraging its position in the high-performance GaN power market, which is expected to see significant growth.
Diodes Incorporated (Nasdaq: DIOD) has launched a new 130W USB Type-C power delivery 3.0 adapter evaluation kit, utilizing Transphorm's SuperGaN FETs. This kit combines Diodes’ ACF controllers with cutting-edge GaN technology, offering significant advantages such as >93.5% peak efficiency, >0.90 power factor, and ultra-low standby power (43mW). Designed for quick implementation in USB PD applications, it supports a range of power profiles and enhances thermal performance and system cost efficiency. The product is now available for manufacturers.