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Transphorm Inc - TGAN STOCK NEWS

Welcome to our dedicated news page for Transphorm (Ticker: TGAN), a resource for investors and traders seeking the latest updates and insights on Transphorm.

Our selection of high-quality news articles is accompanied by an expert summary from Rhea-AI, detailing the impact and sentiment surrounding the news at the time of release, providing a deeper understanding of how each news could potentially affect Transphorm's stock performance. The page also features a concise end-of-day stock performance summary, highlighting the actual market reaction to each news event. The list of tags makes it easy to classify and navigate through different types of news, whether you're interested in earnings reports, stock offerings, stock splits, clinical trials, fda approvals, dividends or buybacks.

Designed with both novice traders and seasoned investors in mind, our page aims to simplify the complex world of stock market news. By combining real-time updates, Rhea-AI's analytical insights, and historical stock performance data, we provide a holistic view of Transphorm's position in the market.

Rhea-AI Summary
Transphorm, Inc. (NASDAQ: TGAN) reported total revenue of $4.7 million for Q3 Fiscal 2024, an increase of 4.0% over the same quarter last year. The company entered into an agreement to be acquired by Renesas Electronics Corporation for approximately $339 million. Despite a decrease in product revenue, Transphorm showcased growth in government revenue. The company raised $3.0 million through warrants and $2.1 million of short-term debt. Transphorm continues its leadership in GaN technology, introducing new high power and low power devices to penetrate various markets.
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Transphorm, Inc. (Nasdaq: TGAN) is showcasing its expanding GaN device portfolio and advancements at APEC 2024, highlighting the industry's first 1200 V GaN-on-Sapphire device model and leading short circuit robustness. The company's versatile SuperGaN device portfolio, including innovative packages, will be featured, along with demonstrations of groundbreaking power systems such as electric vehicle systems. Transphorm's technology is designed to outperform competitive options, offering superior GaN solutions across a wide power spectrum, from 45 W to 10+ kW, and across various power applications.
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Transphorm, Inc. announces the availability of two new SuperGaN® devices in a 4-lead TO-247 package, offering 35 mOhm and 50 mOhm on resistance respectively. The new products will run on Transphorm’s GaN-on-Silicon substrate manufacturing process, suitable for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35 mOhm TP65H035G4YS FET is sampling and slated for release in Q1’2024. These devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in data center, renewables, and broad industrial applications.
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Transphorm, Inc. (Nasdaq: TGAN) announced that its President, Co-founder, and CEO, Primit Parikh, Ph.D., and Chief Financial Officer, Cameron McAulay, will provide a business update and company presentation at the 26th Annual Needham Growth Conference. The event will take place virtually on January 19th, 2024, at 3:45 p.m Eastern Time. A live webcast of the presentation will be available on the Company’s investor site at ir.transphormusa.com. The management team will also be available for one-on-one meetings.
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Renesas Electronics Corporation (6723) to acquire Transphorm, Inc. (TGAN) for $339 million, aiming to expand its WBG portfolio with Transphorm's expertise in GaN technology, enabling higher switching frequency, lower power losses, and smaller form factors, to cater to fast-growing markets such as EVs, data centers, AI, renewable energy, and industrial power conversion.
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Transphorm, Inc. (Nasdaq: TGAN) and Weltrend Semiconductor Inc. (TWSE: 2436) announced the availability of a 100 watt USB-C PD Power Adapter Reference Design using the SuperGaN SiP technology. The design achieved 92.7% efficiency in a Quasi-Resonant Flyback topology, demonstrating the versatility and robustness of GaN. The SuperGaN SiP allows for economies of scale and a lower cost implementation for 100-watt designs compared to the competition. It integrates Weltrend’s WT7162RHSG08 quasi-resonant/multi-mode flyback PWM controller with Transphorm’s 240 milliohm, 650-volt SuperGaN® FET, offering a peak efficiency of 92.7% and increased power density with better thermal management for long-term reliability.
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Transphorm, Inc. (Nasdaq: TGAN) announced the availability of two new reference designs for electric vehicle charging applications using GaN power semiconductors. The 300 W and 600 W Constant Current/Constant Voltage (CC/CV) battery chargers are designed to enable high volume production of chargers for 2- and 3-wheel EVs, with a focus on the Indian and Chinese markets.
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Transphorm, Inc. (Nasdaq: TGAN) and Allegro MicroSystems, Inc. (Nasdaq: ALGM) announced a collaboration to expand GaN power system design for high power applications. The collaboration includes Transphorm’s SuperGaN FETs and Allegro’s AHV85110 Isolated Gate Driver, aimed at enabling the rapid adoption of advanced GaN semiconductors in data centers, renewables, and electric vehicles. The SuperGaN FETs are designed to work in various topologies and are used in multiple commercial products, proven to notably increase reliability, power density, and efficiency. Allegro’s AHV85110 Isolated Gate Driver is optimized for driving GaN FETs, enhancing driver efficiency by as much as 50% compared to competitive gate drivers, greatly simplifying system design and reducing noise and common mode capacitance.
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Transphorm, Inc. (NASDAQ: TGAN) reported a 37% year-over-year revenue growth to $5.0 million in Q2 Fiscal 2024, with product revenue increasing to $3.55 million, up 18% over the prior quarter. The company engaged BofA Securities, Inc. to enhance stockholder value and is hosting a webcast today at 5:00 p.m. EST to review quarterly results and provide a business update.
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Transphorm introduces the SuperGaN TOLT FET, the industry's first top-side cooled surface mount GaN device in the JEDEC-standard TOLT package. The TP65H070G4RS transistor offers improved efficiency and thermal management, making it a high performance, high reliability GaN solution for power systems.
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Transphorm Inc

Nasdaq:TGAN

TGAN Rankings

TGAN Stock Data

307.52M
25.64M
20.93%
59.34%
1.22%
Semiconductor and Related Device Manufacturing
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About TGAN

transphorm is a global semiconductor company that develops gallium nitride (gan) transistors and modules for high-voltage power conversion applications. built on an industry-leading ip portfolio and over 300 years of combined gan engineering expertise, transphorm is delivering the highest performance and highest reliability gan devices and best-in-class applications-driven design support to a growing customer base. transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses. with the industry's only fully-qualified 650v gan devices in production, including testing beyond jedec and extensive qualification and long-term reliability of all devices, transphorm's reliability is unmatched by any gan manufacturer.