Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power Conversion
- None.
- The 35 mOhm TP65H035G4YS FET is sampling and slated for release in Q1’2024, which may lead to potential delays in the availability of the product.
From an electrical engineering perspective, the introduction of Transphorm's new SuperGaN FETs represents a significant advancement in power semiconductor technology. The on resistance (Rds(on)) values of 35 mOhm and 50 mOhm are indicative of the devices' efficiency, as lower on resistance translates to reduced conduction losses during operation, which is crucial for high-power applications. The inclusion of a kelvin-source terminal is noteworthy as it allows for more accurate current sensing and can contribute to enhanced switching performance, leading to further energy savings.
Moreover, the ability to serve as a drop-in replacement for existing silicon and SiC solutions with minimal design changes is a considerable advantage for design engineers. This flexibility could accelerate the adoption of GaN technology in various applications, including data centers and renewable energy systems, where efficiency gains are constantly sought. The reduction in losses compared to SiC MOSFETs at different frequencies demonstrates the potential for these devices to improve the performance of power systems significantly.
A market research analyst would focus on the competitive landscape and potential market impact of these new FETs. Transphorm's GaN-on-Silicon technology positions them competitively against other semiconductor materials like SiC, especially considering the cost-effectiveness and scalability of silicon production lines. The robustness and ease of design and drivability of these FETs could lead to increased market penetration in sectors that are experiencing growth, such as electric vehicles, renewable energy and high-performance computing.
Given the projected release timeline for the 35 mOhm FET, market anticipation and early adoption strategies could shape the investment landscape surrounding Transphorm. Investors and stakeholders may see this as an opportunity to capitalize on the growing demand for energy-efficient power semiconductor devices. The ability of these FETs to reduce power system losses may also align with global sustainability goals, potentially opening up government incentives or subsidies for companies adopting this technology.
A financial analyst would evaluate the announcement's implications for Transphorm's financial performance. The launch of these FETs could signal an expansion of Transphorm's product portfolio and an opportunity to capture a larger share of the power semiconductor market. By offering devices that are compatible with existing systems, Transphorm may see an uptick in sales with lower barriers to entry for customers looking to upgrade their systems without significant redesigns.
Investors should consider the potential for increased revenue streams from these products, particularly as the 50 mOhm FET is already available and the 35 mOhm FET is expected to release in the near future. However, it will be important to monitor the manufacturing scale-up and the adoption rate of these devices, as these factors will directly influence the financial returns. The company's ability to maintain product quality and reliability as they ramp up production will also be critical in determining long-term financial success.
New FETs Serve as an Original Design Option or Drop-In Replacement for SiC
Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data center, renewables, and broad industrial applications. As noted, the 4-lead configuration offers flexibility to users for further improved switching performance. In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.
Transphorm’s SuperGaN FETs are known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the-shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:
Part Number |
Vds (V) min |
Rds(on) (mΩ) typ |
Vth (V) typ |
Id (25°C) (A) max |
Package Variation |
TP65H035G4YS |
650 |
35 |
3.6 |
46.5 |
Source |
TP65H050G4YS |
650 |
50 |
4 |
35 |
Source |
“We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm. “The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems. It’s an important addition to our product line as we ramp into higher power applications.”
Availability
For samples of the 35 mOhm and 50 mOhm TO-247-4L FETs, contact Transphorm’s sales team at wwsales@transphormusa.com. Datasheets for each device can be found at the below links:
- TP65H035G4YS datasheet: https://www.transphormusa.com/en/document/data-sheet-tp65h035g4ys/
- TP65H050G4YS datasheet: https://www.transphormusa.com/en/document/data-sheet-tp65h050g4ys/
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
View source version on businesswire.com: https://www.businesswire.com/news/home/20240117581078/en/
Press Contact:
Heather Ailara
+1.973.567.6040
heather.ailara@transphormusa.com
Investor Contacts:
David
KCSA Strategic Communications
transphorm@kcsa.com
Source: Transphorm, Inc.
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