An email has been sent to your address with instructions for changing your password.
There is no user registered with this email.
Sign Up
To create a free account, please fill out the form below.
Thank you for signing up!
A confirmation email has been sent to your email address. Please check your email and follow the instructions in the message to complete the registration process. If you do not receive the email, please check your spam folder or contact us for assistance.
Welcome to our platform!
Oops!
Something went wrong while trying to create your new account. Please try again and if the problem persist, Email Us to receive support.
Transphorm and Weltrend Semiconductor have collaborated to release new integrated GaN System-in-Packages, expanding power level support for a wider range of next-generation adapters and chargers. The new devices establish the first SiP product family based on Transphorm's SuperGaN platform, offering innovative features for high-quality power supplies. End product manufacturers can now design adapters with reduced BOM, fast charging, and higher power outputs, while also creating 'one-size-fits-all' chargers with multiple ports in a smaller, lighter form factor. The SuperGaN platform provides best-in-class robustness and reliability, increasing power density by 50% over silicon. Weltrend's SiP designs harness these advantages to create plug-and-play solutions that speed up design processes and reduce form factor size.
Transphorm e Weltrend Semiconductor hanno collaborato per lanciare nuovi Sistemi GaN integrati in pacchetto, espandendo il supporto di livelli di potenza per una gamma più ampia di adattatori e caricabatterie di nuova generazione. I nuovi dispositivi inaugurano la prima famiglia di prodotti SiP basata sulla piattaforma SuperGaN di Transphorm, offrendo funzionalità innovative per alimentatori di alta qualità. I produttori di prodotti finali possono ora progettare adattatori con una riduzione della BOM, ricarica rapida e maggiore potenza di uscita, creando anche caricabatterie universali più piccoli, leggeri e con molteplici porte. La piattaforma SuperGaN assicura la massima robustezza e affidabilità della categoria, incrementando la densità di potenza del 50% rispetto al silicio. I disegni SiP di Weltrend sfruttano questi vantaggi per creare soluzioni plug-and-play che accelerano i processi di progettazione e riducono le dimensioni del formato.
Transphorm y Weltrend Semiconductor han colaborado para lanzar nuevos Sistemas GaN Integrados en Paquetes, expandiendo la asistencia de nivel de potencia para una gama más amplia de adaptadores y cargadores de próxima generación. Los nuevos dispositivos establecen la primera familia de productos SiP basada en la plataforma SuperGaN de Transphorm, ofreciendo características innovadoras para suministros de potencia de alta calidad. Los fabricantes de productos finales ahora pueden diseñar adaptadores con una BOM reducida, carga rápida y mayores salidas de potencia, mientras también crean cargadores 'talla única' con múltiples puertos en un factor de forma más pequeño y ligero. La plataforma SuperGaN proporciona la mejor robustez y fiabilidad de su clase, aumentando la densidad de potencia en un 50% sobre el silicio. Los diseños SiP de Weltrend aprovechan estas ventajas para crear soluciones plug-and-play que aceleran los procesos de diseño y reducen el tamaño del factor de forma.
Transphorm과 Weltrend Semiconductor는 새로운 통합 GaN 시스템 패키지를 출시하여 다음 세대 어댑터 및 충전기에 대한 전력 수준 지원을 확대하였습니다. 새로운 장치는 Transphorm의 SuperGaN 플랫폼을 기반으로 한 첫 번째 SiP 제품군을 구축하며 고품질 전원 공급 장치를 위한 혁신적인 기능을 제공합니다. 최종 제품 제조업체는 이제 BOM을 줄이고, 빠른 충전 및 더 높은 전력 출력을 갖춘 어댑터를 설계할 수 있으며, 더 작고 가벼운 형태의 다중 포트 '원 사이즈 핏' 충전기도 만들 수 있습니다. SuperGaN 플랫폼은 동급 최강의 견고성과 신뢰성을 제공하며, 실리콘에 비해 전력 밀도를 50% 증가시킵니다. Weltrend의 SiP 디자인은 이러한 이점을 활용하여 디자인 프로세스를 가속화하고 형태 크기를 축소하는 플러그 앤 플레이 솔루션을 만듭니다.
Transphorm et Weltrend Semiconductor ont collaboré pour lancer de nouveaux Systèmes GaN intégrés dans des boîtiers, élargissant ainsi le support de niveau de puissance pour une gamme plus large d'adaptateurs et de chargeurs de nouvelle génération. Ces nouveaux dispositifs constituent la première famille de produits SiP basée sur la plateforme SuperGaN de Transphorm, offrant des caractéristiques innovantes pour des alimentations de haute qualité. Les fabricants de produits finaux peuvent maintenant concevoir des adaptateurs avec une réduction du BOM, une charge rapide et des sorties de puissance supérieures, tout en créant des chargeurs 'taille unique' avec plusieurs ports dans un facteur de forme plus petit et plus léger. La plateforme SuperGaN fournit une robustesse et une fiabilité incomparables, augmentant la densité de puissance de 50% par rapport au silicium. Les conceptions SiP de Weltrend exploitent ces avantages pour créer des solutions prêtes-à-l'emploi qui accélèrent les processus de conception et réduisent la taille du facteur de forme.
Transphorm und Weltrend Semiconductor haben zusammengearbeitet, um neue integrierte GaN System-in-Packages herauszubringen und somit die Leistungsunterstützung für ein breiteres Spektrum von Adaptern und Ladegeräten der nächsten Generation zu erweitern. Die neuen Geräte begründen die erste SiP-Produktfamilie auf der Basis von Transphorms SuperGaN-Plattform, die innovative Merkmale für hochwertige Stromversorgungen bietet. Hersteller von Endprodukten können nun Adapter mit reduzierter BOM, Schnellladung und höheren Leistungsausgängen entwerfen und gleichzeitig 'Einheitsgröße' Ladegeräte mit mehreren Ports in einem kleineren, leichteren Formfaktor erstellen. Die SuperGaN-Plattform bietet Robustheit und Zuverlässigkeit der Spitzenklasse und erhöht die Leistungsdichte um 50% gegenüber Silizium. Weltrends SiP-Designs nutzen diese Vorteile, um Plug-and-Play-Lösungen zu schaffen, die den Designprozess beschleunigen und die Formgröße verringern.
Positive
The collaboration between Transphorm and Weltrend Semiconductor has resulted in the release of new integrated GaN System-in-Packages.
The new devices expand power level support for a wider range of next-generation adapters and chargers.
Transphorm's SuperGaN platform offers innovative features for high-quality power supplies with reduced BOM.
Manufacturers can now design adapters with fast charging and higher power outputs in a smaller, lighter form factor.
Weltrend's SiP designs utilize the advantages of the SuperGaN platform to create plug-and-play solutions that speed up design processes.
Negative
None.
SuperGaN-based SiP Family Now Includes Three Devices, Expanding Power Level Support for a Wider Range of Next Generation Adapters and Chargers
GOLETA, Calif. & HSINCHU, Taiwan--(BUSINESS WIRE)--
Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, and the global leader in adapter USB Power Delivery (PD) Controller Integrated Circuits (IC) Weltrend Semiconductor Inc. (TWSE: 2436) today announced availability of two new GaN System-in-Packages (SiPs). When combined with Weltrend’s flagship GaN SiP announced last year, the new devices establish the first SiP product family based on Transphorm’s SuperGaN® platform.
The new SiPs—WT7162RHUG24B and WT7162RHUG24C—integrate Weltrend’s high frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 150 mΩ and 480 mΩ SuperGaN FETs respectively. Like their 240 mΩ predecessor (WT7162RHUG24A), the devices pair with USB PD or programmable power adapter controllers to provide a total adapter solution. Notably, they also offer several innovative features including the UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control among others that allow customers to design high quality power supplies faster and with fewer components using the simplest design approach.
“When we launched our first GaN SiP last year, it was an important milestone in our company’s evolution. It demonstrated a new GTM strategy for the AC-to-DC power market,” said Wayne Lo, Vice President of Marketing, Weltrend. “Today’s news confirms we’re continuing to serve that space with a wider selection of devices designed to support a wider assortment of product power levels. A total packaged solution with Transphorm’s SuperGaN platform delivers design simplicity with unparalleled performance for devices now ranging from low 30-watt USB-C PD power adapters through to nearly 200-watt chargers, a unique Transphorm GaN capability.”
End product manufacturers seek ways to develop new adapters with a reduced bill-of-materials (BOM) that offer versatility, fast charging, and higher power outputs. Additionally, in many cases they seek to deliver “one-size-fits-all” chargers with multiple ports and/or multiple types of connections. All of this in smaller, lighter weight form factor.
Some key advantages of Transphorm’s normally-off d-mode SuperGaN platform include best-in-class robustness (+/- 20 V gate margin with a 4 V noise immunity) and reliability (< 0.05 FIT) with the ability to increase power density by 50% over silicon. Weltrend’s elegant SiP designs harness those advantages along with its own innovative technologies to create a near plug-and-play solution that speeds design while reducing form factor size.
“SiPs are an important device option when considering the needs of adapter and charger manufacturers,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm. “These systems require effective power conversion that, while simple to use with integrated functionality, also minimize learning curves to ensure quick design in. The first device released validated the performance and versatility of a SuperGaN SiP. The new devices announced today validate both our companies’ deepening commitment to arming customers with choice.”
Key Specifications
WT7162RHUG24A
WT7162RHUG24B (new)
WT7162RHUG24C (new)
Rds(on)
240 mΩ
150 mΩ
480 mΩ
Vds min
650 V
Power Efficiency
> 93%
Power Density
26 w/in3
Max Frequency
180 kHz
Wide Output
Voltage Operation
USB-C PD 3.0
PPS 3.3V~21V
Package
24-pin 8x8 QFN
Key Features
Feature
Advantage
Adjustable GaN FET gate slew rate control
Balances out efficiency and EMI compliance
External VDD linear regulator circuit not required
(700 V ultra HV start-up current pulled directly from AC Line voltage)
Reduces component count
Reduced package inductance
Maximizes chip performance
Fits in a standard 8x8 QFN FF
Allows for low profile/small system footprint
Target Applications and Availability
Weltrend’s SuperGaN SiP family is optimized for use in high-performance, low-profile USB-C power adapters for mobile/IoT devices such as smartphones, tablets, laptops, headphones, drones, speakers, cameras, and more.
Additional device specifications are detailed in the datasheets here:
The two new devices (WT7162RHUG24B and WT7162RHUG24C) are currently sampling. Contact sales@weltrend.com.tw for more information.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat at Transphorm_GaN.
About Weltrend Semiconductor Inc.
Founded in 1989 in the "Silicon Valley of Taiwan," the Hsinchu Science Park, Weltrend Semiconductor, Inc. (TWSE: 2436) is a leading fabless semiconductor company specializing in the planning, design, testing, application development, and distribution of mixed-signal/digital IC products in power supplies, motor controls, image processing, and more across multiple applications. For more information, please visit www.weltrend.com.
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
What companies collaborated to release new integrated GaN System-in-Packages?
Transphorm and Weltrend Semiconductor collaborated to release new integrated GaN System-in-Packages.
What is the ticker symbol for Transphorm?
The ticker symbol for Transphorm is 'TGAN.'
What are the key advantages of Transphorm's SuperGaN platform?
The key advantages of Transphorm's SuperGaN platform include best-in-class robustness and reliability, increasing power density by 50% over silicon.
What are the target applications for Weltrend's SuperGaN SiP family?
Weltrend's SuperGaN SiP family is optimized for use in high-performance, low-profile USB-C power adapters for mobile/IoT devices such as smartphones, tablets, laptops, headphones, drones, speakers, and cameras.
What are the key features of the new GaN System-in-Packages?
The new GaN System-in-Packages integrate Weltrend's high frequency multi-mode Flyback PWM controller with Transphorm's SuperGaN FETs, offering features like UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control.
transphorm is a global semiconductor company that develops gallium nitride (gan) transistors and modules for high-voltage power conversion applications. built on an industry-leading ip portfolio and over 300 years of combined gan engineering expertise, transphorm is delivering the highest performance and highest reliability gan devices and best-in-class applications-driven design support to a growing customer base. transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses. with the industry's only fully-qualified 650v gan devices in production, including testing beyond jedec and extensive qualification and long-term reliability of all devices, transphorm's reliability is unmatched by any gan manufacturer.
