Coherent Expands Silicon Carbide 200 mm n-Type Epitaxial Wafer Production
Rhea-AI Summary
Coherent Corp. (NYSE: COHR) has launched its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers), with shipments of 350 micron and 500 micron thickness substrates and epi-wafers already underway. As a manufacturer of both SiC substrates and epitaxial wafers, Coherent aims to deliver exceptional quality, performance, and reliability.
The new 200 mm SiC epi-wafers feature advanced thickness and doping uniformity, supporting the production of superior SiC power semiconductors. This transition from 150 mm to 200 mm diameter wafers addresses the growing demand for SiC semiconductors in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers.
The larger wafers offer a 1.8x increase in usable area, potentially enhancing productivity and reducing costs for SiC device manufacturers. The implementation of 200 mm tooling aligns with the industry's drive for greater performance and reduced operational costs.
Positive
- Launch of 200 mm silicon carbide epitaxial wafers
- 1.8x increase in usable area per wafer compared to 150 mm
- Potential for enhanced productivity and reduced costs for SiC device manufacturers
- Addresses growing demand in electric vehicles and energy infrastructure sectors
Negative
- None.
Insights
Coherent's expansion into 200 mm SiC epi-wafer production marks a significant technological advancement in the semiconductor industry. The transition from 150 mm to 200 mm wafers offers a 1.8x increase in usable area, which translates to higher yields and improved cost efficiency for device manufacturers. This move aligns with the growing demand for SiC semiconductors in critical sectors like electric vehicles, energy infrastructure and high-power EV chargers.
The company's ability to manufacture both SiC substrates and epitaxial wafers in-house gives them a competitive edge in quality control and integration. The focus on advanced thickness and doping uniformity suggests potential improvements in device performance and reliability. This development could accelerate the adoption of SiC devices in power electronics applications, potentially disrupting traditional silicon-based solutions.
For investors, this positions Coherent as a key player in the rapidly growing SiC market, which is important for next-generation power electronics. The expansion could lead to increased market share and revenue growth, especially as the automotive and renewable energy sectors continue to expand their use of SiC technology.
Coherent's strategic move into 200 mm SiC epi-wafer production is well-timed with market trends. The global SiC market is projected to grow at a CAGR of over
This expansion could significantly impact Coherent's market position. As one of the few companies capable of producing both SiC substrates and epi-wafers at 200 mm, they're well-positioned to capture a larger market share. The move also aligns with the industry's push towards larger wafer sizes, which could become a standard in the near future.
Investors should note that while this development is promising, the SiC market is highly competitive with players like Wolfspeed and STMicroelectronics also investing heavily in capacity expansion. Coherent's success will depend on their ability to scale production efficiently and maintain quality standards. The potential for increased revenue and market share makes this a positive development for the company's long-term growth prospects.
PITTSBURGH, Sept. 26, 2024 (GLOBE NEWSWIRE) -- Coherent Corp. (NYSE: COHR), a global leader in materials, networking, and laser technologies, announced today the launch of its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers). Substrate and epi-wafer shipments from the company at 350 micron and 500 micron thickness are now underway.
As a dedicated manufacturer of both SiC substrates and epitaxial wafers, Coherent combines these elements to deliver exceptional quality, performance, and reliability. The new 200 mm SiC epi-wafers are engineered with cutting-edge thickness and doping uniformity, setting new industry standards and supporting the production of superior SiC power semiconductors.
“With our advanced technology, we are not only enhancing the quality of SiC devices but also addressing the growing demand for 200 mm for efficient power-conversion components in critical sectors,” said Gary Ruland, Vice President and General Manager of the SiC Materials Business Unit.
SiC devices are integral to power conversion in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers. The transition from 150 mm to 200 mm diameter wafers responds to the increasing demand for SiC semiconductors, allowing manufacturers to produce more devices per wafer. This shift is expected to enhance productivity and reduce the cost of SiC devices, benefiting a wide range of applications.
By adopting larger wafers, SiC device manufacturers can achieve higher yields and improved cost efficiency because of a 1.8x increase in usable area per wafer. The implementation of state-of-the-art 200 mm tooling brings additional advantages while aligning with the industry’s drive for greater performance and reduced operational costs.
For additional information about Coherent silicon carbide epitaxial wafers or other innovative products, please visit coherent.com.
About Coherent
Coherent empowers market innovators to define the future through breakthrough technologies, from materials to systems. We deliver innovations that resonate with our customers in diversified applications for the industrial, communications, electronics, and instrumentation markets. Coherent has research and development, manufacturing, sales, service, and distribution facilities worldwide. For more information, please visit us at coherent.com.
Media Contact:
Amy Wilson
Corporate Communications & Investor Relations
corporate.communications@coherent.com
FAQ
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