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GlobalFoundries Announces Production Release of 130CBIC SiGe Platform for High-Performance Smart Mobile, Communication and Industrial Applications

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GlobalFoundries (Nasdaq: GFS) has announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, marking a significant advancement in silicon germanium (SiGe) technology. The platform delivers exceptional performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz.

Developed at GF's Burlington, Vermont facility, 130CBIC is designed for multiple key markets including smartphones, wireless infrastructure, optical networking, satellite communications, and industrial IoT. The technology enables low-noise amplifiers for reduced battery consumption in smartphones and supports high-speed analog and optical networking in datacenters. The platform also facilitates advanced mmWave industrial radar applications exceeding 100GHz.

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Positive

  • Industry's first high-performance complementary BiCMOS technology with superior transistor performance
  • Platform enables reduced power consumption while maintaining performance in smartphones
  • Technology supports multiple high-growth markets including smartphones, wireless infrastructure, and IoT
  • Low-mask count process allows faster market deployment

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  • None.

News Market Reaction

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-1.15% News Effect

On the day this news was published, GFS declined 1.15%, reflecting a mild negative market reaction.

Data tracked by StockTitan Argus on the day of publication.

Industry’s first high-performance complementary BiCMOS technology delivers performance and power advantages for essential markets and applications

SANTA CLARA, Calif., Aug. 28, 2025 (GLOBE NEWSWIRE) -- Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s highest-performance silicon germanium (SiGe) technology to date.

Now available for design with a process design kit (PDK), 130CBIC delivers unmatched performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz—making it the only high-performance SiGe platform capable of addressing multiple key markets including smartphones, wireless infrastructure, optical networking, satellite communications and industrial IoT.

Developed and manufactured at GF’s facility in Burlington, Vermont, 130CBIC is optimized to push the limits of RF performance in connected applications while reducing cost. For cellular smartphones, the platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain. In the datacenter, the platform’s high-performance PNP transistors enable innovative amplifier topologies that deliver high gain-bandwidth at lower power for high-speed analog and optical networking. The platform also supports advanced mmWave industrial radar applications exceeding 100GHz, enabling high resolution sensing and distance ranging in a reduced form factor.

“130CBIC represents a major milestone in our SiGe roadmap, setting a new benchmark for performance for the broad spectrum of high-growth markets that rely on advanced RF technologies for high-speed, energy-efficient connectivity,” said Shankaran Janardhanan, senior vice president of GF’s RF product line. “By combining industry-leading transistor performance with a low-mask count process, we’re opening new avenues of RF innovation to our customers across the board and enabling them to ramp new technologies to market faster.”

130CBIC is available for prototyping through GF’s GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026. RF reference designs are available through GF’s self-service GF Connect portal to help jumpstart the design process.

About GF
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com.

Forward-looking information
This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.

Media Contact:
Stephanie Gonzalez
stephanie.gonzalez@gf.com


FAQ

What are the key features of GlobalFoundries' new 130CBIC SiGe platform?

The platform features NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz, making it the highest-performance SiGe technology from GlobalFoundries to date.

Which markets will benefit from GlobalFoundries' 130CBIC technology?

The technology targets smartphones, wireless infrastructure, optical networking, satellite communications, and industrial IoT markets.

How does the GFS 130CBIC platform improve smartphone performance?

The platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain in smartphones.

When will GlobalFoundries' 130CBIC platform be available for prototyping?

The platform is available for prototyping through GF's GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026.

Where is GlobalFoundries manufacturing the new 130CBIC platform?

The platform is being developed and manufactured at GF's facility in Burlington, Vermont.
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