GlobalFoundries Announces Production Release of 130CBIC SiGe Platform for High-Performance Smart Mobile, Communication and Industrial Applications
GlobalFoundries (Nasdaq: GFS) has announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, marking a significant advancement in silicon germanium (SiGe) technology. The platform delivers exceptional performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz.
Developed at GF's Burlington, Vermont facility, 130CBIC is designed for multiple key markets including smartphones, wireless infrastructure, optical networking, satellite communications, and industrial IoT. The technology enables low-noise amplifiers for reduced battery consumption in smartphones and supports high-speed analog and optical networking in datacenters. The platform also facilitates advanced mmWave industrial radar applications exceeding 100GHz.
GlobalFoundries (Nasdaq: GFS) ha annunciato il rilascio in produzione della sua piattaforma Bi-CMOS complementare (CBIC) a 130 nm, segnando un importante progresso nella tecnologia silicio-germanio (SiGe). La piattaforma offre prestazioni di rilievo con transistor NPN che superano i 400 GHz ft/fmax e transistor PNP oltre i 200 GHz.
Sviluppata presso lo stabilimento GF di Burlington, Vermont, la 130CBIC è pensata per diversi settori chiave, tra cui smartphone, infrastrutture wireless, networking ottico, comunicazioni satellitari e IoT industriale. La tecnologia consente amplificatori a basso rumore per ridurre il consumo della batteria negli smartphone e supporta applicazioni analogiche ad alta velocità e networking ottico nei data center. La piattaforma abilita inoltre radar industriali mmWave avanzati con prestazioni oltre i 100 GHz.
GlobalFoundries (Nasdaq: GFS) ha anunciado la puesta en producción de su plataforma Bi-CMOS complementaria (CBIC) de 130 nm, marcando un avance significativo en la tecnología de silicio-germanio (SiGe). La plataforma ofrece un rendimiento excepcional con transistores NPN que superan los 400 GHz ft/fmax y transistores PNP que exceden los 200 GHz.
Desarrollada en la planta de GF en Burlington, Vermont, la 130CBIC está dirigida a múltiples mercados clave, incluidos smartphones, infraestructuras inalámbricas, redes ópticas, comunicaciones por satélite y IoT industrial. La tecnología permite amplificadores de bajo ruido para reducir el consumo de batería en smartphones y soporta comunicaciones analógicas y redes ópticas de alta velocidad en centros de datos. Además, la plataforma facilita aplicaciones avanzadas de radar industrial mmWave con frecuencias superiores a 100 GHz.
GlobalFoundries (나스닥: GFS)가 130nm 보완형 Bi-CMOS(CBIC) 플랫폼의 양산 출시를 발표하며 실리콘 게르마늄(SiGe) 기술에서 중요한 진전을 이루었습니다. 이 플랫폼은 NPN 트랜지스터가 400GHz ft/fmax를 넘고 PNP 트랜지스터가 200GHz를 초과하는 탁월한 성능을 제공합니다.
버몬트주 벌링턴에 위치한 GF 공장에서 개발된 130CBIC는 스마트폰, 무선 인프라, 광 네트워킹, 위성 통신, 산업용 IoT 등 여러 핵심 시장을 겨냥합니다. 해당 기술은 스마트폰의 배터리 소모를 줄여주는 저잡음 증폭기를 구현할 수 있으며, 데이터센터의 고속 아날로그 및 광 네트워킹을 지원합니다. 또한 이 플랫폼은 100GHz를 넘는 고급 mmWave 산업용 레이더 응용을 가능하게 합니다.
GlobalFoundries (Nasdaq: GFS) a annoncé la mise en production de sa plateforme Bi-CMOS complémentaire (CBIC) en 130 nm, marquant une avancée significative dans la technologie silicium-germanium (SiGe). La plateforme offre des performances remarquables avec des transistors NPN dépassant 400 GHz ft/fmax et des transistors PNP supérieurs à 200 GHz.
Développée dans l'usine GF de Burlington, dans le Vermont, la 130CBIC est conçue pour plusieurs marchés clés, notamment les smartphones, les infrastructures sans fil, les réseaux optiques, les communications par satellite et l'IoT industriel. La technologie permet des amplificateurs à faible bruit pour réduire la consommation des batteries dans les smartphones et prend en charge les applications analogiques et réseaux optiques à haute vitesse dans les centres de données. La plateforme facilite également des applications radar industrielles mmWave avancées au-delà de 100 GHz.
GlobalFoundries (Nasdaq: GFS) hat die Produktionsfreigabe seiner 130nm komplementären Bi-CMOS (CBIC) Plattform bekanntgegeben und damit einen wichtigen Fortschritt in der Silizium-Germanium-(SiGe)-Technologie erzielt. Die Plattform liefert herausragende Performance mit NPN-Transistoren, die über 400 GHz ft/fmax erreichen, und PNP-Transistoren, die mehr als 200 GHz erzielen.
Entwickelt in GFs Werk in Burlington, Vermont, ist die 130CBIC für mehrere Schlüsselmärkte konzipiert, darunter Smartphones, drahtlose Infrastruktur, optische Netzwerke, Satellitenkommunikation und industrielles IoT. Die Technologie ermöglicht rauscharme Verstärker zur Verringerung des Batterieverbrauchs in Smartphones und unterstützt hochgeschwindigkeitsfähige Analog- und optische Netzwerke in Rechenzentren. Zudem eröffnet die Plattform fortschrittliche mmWave-Industrieradar-Anwendungen jenseits von 100 GHz.
- Industry's first high-performance complementary BiCMOS technology with superior transistor performance
- Platform enables reduced power consumption while maintaining performance in smartphones
- Technology supports multiple high-growth markets including smartphones, wireless infrastructure, and IoT
- Low-mask count process allows faster market deployment
- None.
Insights
GF's new 130CBIC SiGe platform represents a significant technical advancement that strengthens their position in high-growth RF markets.
GlobalFoundries has released a breakthrough 130nm complementary BiCMOS (CBIC) platform that pushes silicon germanium (SiGe) performance to new heights. The platform achieves NPN transistors exceeding 400 GHz and PNP transistors surpassing 200 GHz frequency thresholds - exceptional metrics that position it as a unique offering in the semiconductor space.
What makes this development particularly notable is its versatility across multiple high-growth markets. For smartphones, the technology enables low-noise amplifiers that reduce power consumption while maintaining performance, addressing the critical battery life challenge. In data centers, the high-performance PNP transistors support amplifier designs that deliver better gain-bandwidth at lower power consumption - a key advantage for high-speed analog and optical networking applications. The platform also enables mmWave industrial radar applications exceeding 100GHz, which translates to superior sensing capabilities in smaller form factors.
The combination of industry-leading performance with a low-mask count process is technically significant. Lower mask counts typically mean reduced manufacturing complexity and potentially lower production costs, which could improve margins or competitive pricing. The availability through GlobalFoundries' multi-project wafer program, with shuttles scheduled through 2025-2026, provides a practical path for customers to prototype and develop products with this technology, potentially accelerating market adoption.
Industry’s first high-performance complementary BiCMOS technology delivers performance and power advantages for essential markets and applications
SANTA CLARA, Calif., Aug. 28, 2025 (GLOBE NEWSWIRE) -- Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s highest-performance silicon germanium (SiGe) technology to date.
Now available for design with a process design kit (PDK), 130CBIC delivers unmatched performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz—making it the only high-performance SiGe platform capable of addressing multiple key markets including smartphones, wireless infrastructure, optical networking, satellite communications and industrial IoT.
Developed and manufactured at GF’s facility in Burlington, Vermont, 130CBIC is optimized to push the limits of RF performance in connected applications while reducing cost. For cellular smartphones, the platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain. In the datacenter, the platform’s high-performance PNP transistors enable innovative amplifier topologies that deliver high gain-bandwidth at lower power for high-speed analog and optical networking. The platform also supports advanced mmWave industrial radar applications exceeding 100GHz, enabling high resolution sensing and distance ranging in a reduced form factor.
“130CBIC represents a major milestone in our SiGe roadmap, setting a new benchmark for performance for the broad spectrum of high-growth markets that rely on advanced RF technologies for high-speed, energy-efficient connectivity,” said Shankaran Janardhanan, senior vice president of GF’s RF product line. “By combining industry-leading transistor performance with a low-mask count process, we’re opening new avenues of RF innovation to our customers across the board and enabling them to ramp new technologies to market faster.”
130CBIC is available for prototyping through GF’s GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026. RF reference designs are available through GF’s self-service GF Connect portal to help jumpstart the design process.
About GF
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com.
Forward-looking information
This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.
Media Contact:
Stephanie Gonzalez
stephanie.gonzalez@gf.com
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