GlobalFoundries Licenses GaN Technology from TSMC to Accelerate U.S.-Manufactured Power Portfolio for Datacenter, Industrial and Automotive Customers
GlobalFoundries (Nasdaq: GFS) has licensed 650V and 80V GaN technology from TSMC to accelerate its next-generation power portfolio for datacenter, industrial and automotive customers. The licensed technology will be qualified at GF’s Burlington, Vermont facility, using the site's high-voltage GaN-on-silicon expertise to speed volume production.
Development is set for early 2026 with production planned later in 2026. GF positions the move as a way to provide U.S.-based GaN capacity and address higher efficiency, power density and compactness needs in power systems.
GlobalFoundries (Nasdaq: GFS) ha accordato in licensing tecnologia GaN da 650 V e 80 V a TSMC per accelerare il proprio portafoglio di potenza di nuova generazione per clienti datacenter, industriali e automobilistici. La tecnologia concessa in licenza sarà qualificata presso lo stabilimento di GF a Burlington, Vermont, sfruttando l'esperienza di GaN-on-silicio ad alta tensione del sito per velocizzare la produzione in volumi.
Lo sviluppo è previsto per inizio del 2026 con la produzione pianificata più avanti nel 2026. GF presenta questa mossa come un modo per fornire capacità GaN basate negli Stati Uniti e affrontare esigenze di maggiore efficienza, densità di potenza e compattezza nei sistemi di alimentazione.
GlobalFoundries (Nasdaq: GFS) ha licenciado tecnología GaN de 650 V y 80 V de TSMC para acelerar su cartera de potencia de próxima generación para clientes de centros de datos, industriales y automotrices. La tecnología licenciada se cualificará en las instalaciones de GF en Burlington, Vermont, utilizando la experiencia de GaN-on-silicon de alta tensión del sitio para acelerar la producción en volumen.
El desarrollo está previsto para principios de 2026 con la producción planificada para más adelante en 2026. GF presenta este movimiento como una forma de proporcionar capacidad de GaN con base en EE. UU. y abordar las necesidades de mayor eficiencia, densidad de potencia y compacidad en los sistemas de alimentación.
GlobalFoundries (나스닥: GFS)는 TSMC로부터 650V 및 80V GaN 기술을 라이선스 받아 데이터센터, 산업 및 자동차 고객을 위한 차세대 파워 포트폴리오를 가속합니다. 라이선스 기술은 GF의 벌링턴, 버몬트 시설에서 자격을 받으며, 현장의 고전압 GaN-온-실리콘 전문 지식을 활용해 양산 속도를 높입니다.
개발은 2026년 초에 예정되어 있으며 생산은 2026년 말에 계획되어 있습니다. GF는 이 움직임을 미국 내 GaN 생산 능력을 제공하고 전력 시스템의 효율성, 전력 밀도 및 소형화 요구를 충족시키는 방법으로 제시합니다.
GlobalFoundries (NYSE: GFS) a licencié la technologie GaN 650 V et 80 V de TSMC pour accélérer son portefeuille électrique de nouvelle génération destiné aux clients datacenters, industriels et automobiles. La technologie licenciée sera qualifiée dans l’installation de GF à Burlington, Vermont, en utilisant l’expertise GaN-on-silicium haute tension du site pour accélérer la production en volume.
Le développement est prévu pour début 2026 avec une production planifiée plus tard en 2026. GF présente cette démarche comme un moyen de fournir une capacité GaN basée aux États‑Unis et de répondre aux besoins de plus grande efficacité, densité de puissance et compacité des systèmes d’alimentation.
GlobalFoundries (Nasdaq: GFS) hat 650V- und 80V-GaN-Technologie von TSMC lizenziert, um sein Power-Portfolio der nächsten Generation für Rechenzentren, Industrie- und Automobilkunden zu beschleunigen. Die lizenzierte Technologie wird in GF's Einrichtung in Burlington, Vermont, qualifiziert, wobei die Hochspannungs-GaN-on-Si-Expertise des Standorts genutzt wird, um die Serienproduktion zu beschleunigen.
Die Entwicklung ist für Anfang 2026 geplant, die Produktion soll später in 2026 erfolgen. GF positioniert den Schritt als eine Möglichkeit, US-weit verfügbare GaN-Kapazität bereitzustellen und den Anforderungen an höhere Effizienz, Leistungsdichte und Kompaktheit in Leistungssystemen gerecht zu werden.
GlobalFoundries (ناسداك: GFS) قامت بترخيص تقنية GaN بجهد 650 فولت و80 فولت من TSMC لتسريع محفظة الطاقة للجيل التالي لعملاء مراكز البيانات والصناعات والسيارات. ستجري تأهيل التقنية المرخصة في منشأة GF في بُلْرْنْغْتون، في فيرمونت، باستخدام خبرة GaN-on-silicon عالية الجهد في الموقع لتسريع الإنتاج على نطاق واسع.
يُخطط للتطوير في أوائل عام 2026 مع إنتاج مخطط له في لاحقًا في 2026. تعتبر GF هذه الخطوة كطريقة لتوفير قدرة GaN مقرها الولايات المتحدة وللمساعدة في تلبية احتياجات الكفاءة الأعلى وكثافة القدرة والتكامل في أنظمة الطاقة.
- Licensed 650V and 80V GaN technology from TSMC
- U.S.-based manufacturing capacity at Burlington, Vermont
- Development early 2026 with production later in 2026
- Targets datacenter, industrial and automotive power markets
- None.
Insights
Licensing from TSMC accelerates GlobalFoundries GaN roadmap; U.S. capacity and customer access targeted for late
GF will integrate licensed 650V and 80V GaN process technology and qualify it at the Burlington, Vermont site, aiming to move from development in early
The near-term outcome depends strictly on successful qualification at Burlington and on meeting the stated timeline; any delays in development, qualification or scale-up would push product availability beyond late
Technology licensing agreement will advance development of GF’s next generation GaN technologies with products available in late 2026
MALTA, N.Y., Nov. 10, 2025 (GLOBE NEWSWIRE) -- GlobalFoundries (Nasdaq: GFS) (GF) today announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base.
As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration.
GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.
“This agreement reinforces GF’s commitment to innovation and its strategic focus on differentiated technologies that address essential power devices that we use to live, work and connect,” said Téa Williams, senior vice president, power business at GlobalFoundries. “With the addition of this proven GaN technology, we will accelerate the development of our next-generation GaN chips and deliver differentiated solutions that address critical power gaps for mission critical applications from the datacenter, to the car, and to the factory floor.”
About GF
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com.
Forward-looking information
This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.
Media Contact:
Stephanie Gonzalez
stephanie.gonzalez@gf.com
FAQ
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