SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
SK hynix (HXSCL) has developed a new UFS 4.1 solution featuring the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The product, optimized for on-device AI, offers 7% better power efficiency and is 15% thinner (0.85mm) compared to its predecessor. Key performance improvements include 4300MB/s sequential read speed and enhanced random read and write speeds of 15% and 40% respectively.
The company plans to secure customer qualification in 2025 and begin volume shipments in Q1 2026, offering 512GB and 1TB capacity options. SK hynix also aims to develop 321-high 4D NAND-based SSDs for consumer and data center markets within the year.
SK hynix (HXSCL) ha sviluppato una nuova soluzione UFS 4.1 che integra il flash 4D NAND a triplo livello da 321 strati e 1Tb, il più avanzato al mondo, pensato per applicazioni mobili. Il prodotto, ottimizzato per l'intelligenza artificiale integrata, offre una efficienza energetica migliorata del 7% ed è più sottile del 15% (0,85 mm) rispetto al modello precedente. I miglioramenti chiave nelle prestazioni includono una velocità di lettura sequenziale di 4300MB/s e un aumento delle velocità di lettura e scrittura casuali rispettivamente del 15% e del 40%.
L'azienda prevede di ottenere la qualificazione clienti nel 2025 e di avviare le spedizioni in volume nel primo trimestre del 2026, offrendo opzioni di capacità da 512GB e 1TB. SK hynix punta inoltre a sviluppare SSD basati su NAND 4D a 321 strati per i mercati consumer e data center entro l'anno.
SK hynix (HXSCL) ha desarrollado una nueva solución UFS 4.1 que incorpora la memoria flash 4D NAND de triple nivel con 321 capas y 1Tb, la más avanzada del mundo, para aplicaciones móviles. El producto, optimizado para inteligencia artificial en dispositivo, ofrece una eficiencia energética mejorada en un 7% y es un 15% más delgado (0,85 mm) en comparación con su predecesor. Las mejoras clave en el rendimiento incluyen una velocidad de lectura secuencial de 4300MB/s y aumentos en las velocidades de lectura y escritura aleatoria del 15% y 40%, respectivamente.
La compañía planea obtener la calificación de clientes en 2025 y comenzar los envíos en volumen en el primer trimestre de 2026, ofreciendo opciones de capacidad de 512GB y 1TB. SK hynix también tiene como objetivo desarrollar SSD basados en NAND 4D de 321 capas para los mercados de consumo y centros de datos durante el año.
SK hynix (HXSCL)는 모바일 애플리케이션을 위한 세계 최고 수준의 321층 1Tb 트리플 레벨 셀 4D NAND 플래시를 탑재한 새로운 UFS 4.1 솔루션을 개발했습니다. 온디바이스 AI에 최적화된 이 제품은 7% 향상된 전력 효율을 제공하며, 이전 모델 대비 15% 더 얇은 (0.85mm) 두께를 자랑합니다. 주요 성능 향상으로는 4300MB/s의 순차 읽기 속도와 각각 15% 및 40% 향상된 랜덤 읽기 및 쓰기 속도가 포함됩니다.
회사는 2025년에 고객 인증을 확보하고 2026년 1분기에 대량 출하를 시작할 계획이며, 512GB 및 1TB 용량 옵션을 제공합니다. 또한 SK hynix는 올해 내에 321층 4D NAND 기반 SSD를 소비자 및 데이터 센터 시장용으로 개발할 예정입니다.
SK hynix (HXSCL) a développé une nouvelle solution UFS 4.1 intégrant la mémoire flash 4D NAND à triple niveau de 321 couches et 1Tb, la plus avancée au monde, destinée aux applications mobiles. Ce produit, optimisé pour l'IA embarquée, offre une efficacité énergétique améliorée de 7% et est 15% plus fin (0,85 mm) que son prédécesseur. Les améliorations clés des performances comprennent une vitesse de lecture séquentielle de 4300 Mo/s ainsi qu'une augmentation des vitesses de lecture et d'écriture aléatoires de 15% et 40% respectivement.
L'entreprise prévoit d'obtenir la qualification client en 2025 et de commencer les expéditions en volume au premier trimestre 2026, avec des options de capacité de 512 Go et 1 To. SK hynix vise également à développer cette année des SSD basés sur la NAND 4D à 321 couches pour les marchés grand public et des centres de données.
SK hynix (HXSCL) hat eine neue UFS 4.1-Lösung entwickelt, die den weltweit fortschrittlichsten 321-lagigen 1Tb Triple-Level-Cell 4D NAND-Flash für mobile Anwendungen nutzt. Das Produkt, optimiert für On-Device-KI, bietet eine 7% bessere Energieeffizienz und ist 15% dünner (0,85 mm) als sein Vorgänger. Wichtige Leistungsverbesserungen umfassen eine sequentielle Lesegeschwindigkeit von 4300MB/s sowie verbesserte zufällige Lese- und Schreibgeschwindigkeiten um 15% bzw. 40%.
Das Unternehmen plant, die Kundenqualifikation im Jahr 2025 zu sichern und im ersten Quartal 2026 mit der Massenproduktion zu beginnen, wobei 512GB und 1TB Kapazitätsoptionen angeboten werden. SK hynix beabsichtigt zudem, noch in diesem Jahr SSDs auf Basis des 321-lagigen 4D NAND für den Verbraucher- und Rechenzentrumsmarkt zu entwickeln.
- World's highest 321-layer NAND technology showcases technological leadership
- 7% improvement in power efficiency compared to previous generation
- 15% reduction in thickness to 0.85mm for ultra-slim devices
- Significant performance improvements: 4300MB/s sequential read, 15% faster random read, 40% faster random write
- Product portfolio expansion with both 512GB and 1TB capacity options
- Volume shipments won't start until Q1 2026, potentially lagging behind competitors
- Customer qualification still pending, indicating market availability uncertainty
- Optimized for on-device AI with best-in-class sequential reading performance, low power requirement
- Thickness reduced by
15% to fit into ultra-slim flagship smartphones - Portfolio with world's highest 321-layer product to enhance SK hynix's leadership as full stack AI memory provider
The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.
With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device.
The latest product comes with a
The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by
* Sequential Read/Write: speed to read and write data of a file sequentially |
* Random Read/Write: speed to read and write data of dispersed files |
SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB.
Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge."
About SK hynix Inc.
SK hynix Inc., headquartered in
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SOURCE SK hynix Inc.
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