SK hynix Develops UFS 4.1 Solution Based on 321-High NAND

Rhea-AI Summary

SK hynix (HXSCL) has developed a new UFS 4.1 solution featuring the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The product, optimized for on-device AI, offers 7% better power efficiency and is 15% thinner (0.85mm) compared to its predecessor. Key performance improvements include 4300MB/s sequential read speed and enhanced random read and write speeds of 15% and 40% respectively.

The company plans to secure customer qualification in 2025 and begin volume shipments in Q1 2026, offering 512GB and 1TB capacity options. SK hynix also aims to develop 321-high 4D NAND-based SSDs for consumer and data center markets within the year.

Positive

• World's highest 321-layer NAND technology showcases technological leadership
• 7% improvement in power efficiency compared to previous generation
• 15% reduction in thickness to 0.85mm for ultra-slim devices
• Significant performance improvements: 4300MB/s sequential read, 15% faster random read, 40% faster random write
• Product portfolio expansion with both 512GB and 1TB capacity options

Negative

• Volume shipments won't start until Q1 2026, potentially lagging behind competitors
• Customer qualification still pending, indicating market availability uncertainty

• Optimized for on-device AI with best-in-class sequential reading performance, low power requirement
• Thickness reduced by 15% to fit into ultra-slim flagship smartphones
• Portfolio with world's highest 321-layer product to enhance SK hynix's leadership as full stack AI memory provider

SEOUL, South Korea, May 21, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications.

The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.

With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device.

The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphone.

The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively.  Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience.

* Sequential Read/Write: speed to read and write data of a file sequentially

* Random Read/Write: speed to read and write data of dispersed files

SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB.

Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge."

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

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SOURCE SK hynix Inc.

FAQ

What are the key features of SK hynix's new UFS 4.1 solution with 321-layer NAND?

The solution features 321-layer 1Tb triple level cell 4D NAND, 7% better power efficiency, 15% reduced thickness (0.85mm), and 4300MB/s sequential read speed with improved random read/write speeds of 15% and 40% respectively.

When will SK hynix (HXSCL) begin shipping the new UFS 4.1 solution?

SK hynix plans to obtain customer qualification in 2025 and begin volume shipments in the first quarter of 2026.

What storage capacities will be available for SK hynix's new UFS 4.1 solution?

The product will be available in two capacity options: 512GB and 1TB.

How does the new SK hynix UFS 4.1 solution improve upon its predecessor?

It offers 7% better power efficiency, 15% reduced thickness (0.85mm vs 1mm), 4300MB/s sequential read speed, and improved random read and write speeds by 15% and 40% respectively.

What markets is SK hynix targeting with the 321-layer 4D NAND technology?

Besides mobile applications, SK hynix plans to expand into consumer and data center markets with 321-high 4D NAND-based SSDs within the year.