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SK hynix Partners with TSMC to Strengthen HBM Technological Leadership

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SK hynix and TSMC have signed an MOU to collaborate on HBM4 development and next-generation packaging technology. This partnership aims to enhance memory performance for AI applications through trilateral collaboration in product design, foundry, and memory. The focus is on improving the base die in the HBM package by adopting TSMC's advanced logic process for HBM4. The goal is to create customized HBM solutions that meet customer demands for performance and power efficiency. The collaboration also includes optimizing the integration of SK hynix's HBM with TSMC's CoWoS technology, paving the way for open collaboration with customers and strengthening market leadership in the AI memory space.
SK hynix e TSMC hanno firmato un MOU per collaborare allo sviluppo di HBM4 e alla tecnologia di imballaggio di nuova generazione. Questa partnership mira a migliorare le prestazioni della memoria per le applicazioni IA attraverso una collaborazione trilaterale nel design dei prodotti, nella fonderia e nella memoria. L'obiettivo è migliorare il dado base nel pacchetto HBM adottando il processo logico avanzato di TSMC per HBM4. Il goal è creare soluzioni HBM personalizzate che soddisfino le esigenze dei clienti in termini di prestazioni ed efficienza energetica. La collaborazione include anche l'ottimizzazione dell'integrazione dell'HBM di SK hynix con la tecnologia CoWoS di TSMC, aprendo la strada alla collaborazione aperta con i clienti e rafforzando la leadership di mercato nello spazio della memoria AI.
SK hynix y TSMC han firmado un MOU para colaborar en el desarrollo de HBM4 y tecnología de empaquetado de próxima generación. Esta asociación tiene como objetivo mejorar el rendimiento de la memoria para aplicaciones de IA mediante una colaboración trilateral en el diseño de productos, fundición y memoria. Se enfoca en mejorar el dado base en el paquete HBM adoptando el proceso lógico avanzado de TSMC para HBM4. El objetivo es crear soluciones HBM personalizadas que cumplan con las demandas de los clientes en términos de rendimiento y eficiencia energética. La colaboración también incluye la optimización de la integración del HBM de SK hynix con la tecnología CoWoS de TSMC, allanando el camino para la colaboración abierta con los clientes y fortaleciendo el liderazgo de mercado en el espacio de memoria de IA.
SK하이닉스와 TSMC는 HBM4 개발과 차세대 패키징 기술에 대한 협력을 위한 양해각서(MOU)에 서명했습니다. 이 파트너십은 제품 설계, 파운드리 및 메모리에서의 삼자 협력을 통해 AI 애플리케이션의 메모리 성능을 향상시키는 것을 목표로 합니다. 초점은 TSMC의 첨단 논리 공정을 HBM4에 적용하여 HBM 패키지의 기본 다이를 개선하는 데 있습니다. 목표는 고객의 성능 및 전력 효율 요구를 충족하는 맞춤형 HBM 솔루션을 만드는 것입니다. 협력은 또한 SK하이닉스의 HBM과 TSMC의 CoWoS 기술의 통합을 최적화하여 고객과의 개방적 협력의 길을 열고 AI 메모리 분야에서의 시장 리더십을 강화하는 것을 포함합니다.
SK hynix et TSMC ont signé un protocole d'accord pour collaborer au développement de HBM4 et des technologies d'emballage de nouvelle génération. Ce partenariat vise à améliorer les performances de la mémoire pour les applications IA par une collaboration tripartite dans la conception de produits, la fonderie et la mémoire. L'accent est mis sur l'amélioration du die de base dans le paquet HBM en adoptant le processus logique avancé de TSMC pour HBM4. L'objectif est de créer des solutions HBM personnalisées répondant aux exigences des clients en matière de performances et d'efficacité énergétique. La collaboration comprend également l'optimisation de l'intégration de l'HBM de SK hynix avec la technologie CoWoS de TSMC, ouvrant la voie à une collaboration ouverte avec les clients et renforçant la leadership sur le marché de la mémoire IA.
SK hynix und TSMC haben ein MOU zur Zusammenarbeit bei der Entwicklung von HBM4 und der nächsten Generation von Verpackungstechnologien unterzeichnet. Diese Partnerschaft zielt darauf ab, die Speicherleistung für KI-Anwendungen durch trilaterale Zusammenarbeit in Produktgestaltung, Gießerei und Speicher zu verbessern. Der Schwerpunkt liegt auf der Verbesserung des Basewürfels im HBM-Paket durch die Anwendung von TSMCs fortschrittlichem Logikprozess für HBM4. Das Ziel ist die Schaffung kundenspezifischer HBM-Lösungen, die den Leistungs- und Energieeffizienzanforderungen der Kunden entsprechen. Die Zusammenarbeit umfasst auch die Optimierung der Integration von SK hynix' HBM mit TSMCs CoWoS-Technologie, was den Weg für eine offene Zusammenarbeit mit Kunden ebnet und die Marktführerschaft im Bereich der KI-Speicher stärkt.
Positive
  • SK hynix and TSMC collaboration to develop HBM4 and advanced packaging technology
  • Focus on improving base die in HBM package for enhanced performance
  • Adoption of TSMC's advanced logic process for HBM4 to meet customer demands
  • Optimization of integration with TSMC's CoWoS technology for improved solutions
  • Strengthening market leadership in AI memory space through open collaboration
Negative
  • None.
  • SK hynix and TSMC sign MOU to collaborate on HBM4 development and next-generation packaging technology
  • SK hynix will adopt TSMC's cutting-edge foundry process to advance HBM4 performance
  • Product Design-Foundry-Memory trilateral collaboration to break memory performance limits for AI applications

SEOUL, South Korea, April 18, 2024 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced from 2026, through this initiative.

SK hynix said the collaboration between the global leader in the AI memory space and TSMC, a top global logic foundry, will lead to more innovations in HBM technology. The collaboration is also expected to enable breakthroughs in memory performance through trilateral collaboration between product design, foundry, and memory provider.

The two companies will first focus on improving the performance of the base die that is mounted at the very bottom of the HBM package. HBM is made by stacking a core DRAM die on top of a base die that features TSV* technology, and vertically connecting a fixed number of layers in the DRAM stack to the core die with TSV into an HBM package. The base die located at the bottom is connected to the GPU, which controls the HBM.

*TSV (Through Silicon Via): An interconnect technology that links upper and lower chips with an electrode that vertically passes through the base logic chip and DRAM chips. There can be thousands of pass-through TSVs depending on the chip design

SK hynix has used a proprietary technology to make base dies up to HBM3E, but plans to adopt TSMC's advanced logic process for HBM4's base die so additional functionality can be packed into limited space. That also helps SK hynix produce customized HBM that meets a wide range of customer demand for performance and power efficiency.

SK hynix and TSMC also agreed to collaborate to optimize the integration of SK hynix's HBM and TSMC's CoWoS®** technology, while cooperating in responding to common customers' requests related to HBM.

**CoWoS (Chip on Wafer on Substrate): A TSMC proprietary packaging process that connects GPU/xPU, a logic chip, and HBM, on a special substrate called an interposer. It is also called 2.5D packaging as the logic chip and the vertically stacked(3D) HBM are integrated into one module which is placed on a horizontal (2D) package substrate

"We expect a strong partnership with TSMC to help accelerate our efforts for open collaboration with our customers and develop the industry's best-performing HBM4," said Justin Kim, President and the Head of AI Infra, at SK hynix. "With this cooperation in place, we will strengthen our market leadership as the total AI memory provider further by beefing up competitiveness in the space of the custom memory platform."

"TSMC and SK hynix have already established a strong partnership over the years. We've worked together in integrating the most advanced logic and state-of-the art HBM in providing the world's leading AI solutions," said Dr. Kevin Zhang, Senior Vice President of TSMC's Business Development and Overseas Operations Office, and Deputy Co-Chief Operating Officer. "Looking ahead to the next-generation HBM4, we're confident that we will continue to work closely in delivering the best-integrated solutions to unlock new AI innovations for our common customers."

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM"), flash memory chips ("NAND flash") and CMOS Image Sensors ("CIS") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Cision View original content:https://www.prnewswire.com/news-releases/sk-hynix-partners-with-tsmc-to-strengthen-hbm-technological-leadership-302120755.html

SOURCE SK hynix Inc.

FAQ

What collaboration has SK hynix and TSMC signed an MOU for?

SK hynix and TSMC have signed an MOU to collaborate on HBM4 development and next-generation packaging technology.

What is the focus of the collaboration between SK hynix and TSMC?

The focus of the collaboration is on improving the performance of the base die in the HBM package.

Which technology will SK hynix adopt for the base die in HBM4?

SK hynix plans to adopt TSMC's advanced logic process for the base die in HBM4.

What is the goal of creating customized HBM solutions?

The goal is to meet a wide range of customer demand for performance and power efficiency.

What does the collaboration involve in terms of integration?

The collaboration includes optimizing the integration of SK hynix's HBM with TSMC's CoWoS technology.

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