Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI Infrastructure

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) is collaborating within the NVIDIA MGX AI Factory ecosystem to support emerging 800 VDC AI data center architectures. The company is showcasing an 800 V-to-6 V GaNFast™ PDB at COMPUTEX 2026, targeting 97.5% efficiency, 1 MHz operation, and 2100 W/in³ power density.

AI-generated analysis. Not financial advice.

News Market Reaction – NVTS

+19.26% 2.1x vol

91 alerts

+19.26% News Effect

+26.4% Peak in 3 hr 42 min

+$1.29B Valuation Impact

$7.98B Market Cap

2.1x Rel. Volume

On the day this news was published, NVTS gained 19.26%, reflecting a significant positive market reaction. Argus tracked a peak move of +26.4% during that session. Our momentum scanner triggered 91 alerts that day, indicating high trading interest and price volatility. This price movement added approximately $1.29B to the company's valuation, bringing the market cap to $7.98B at that time. Trading volume was elevated at 2.1x the daily average, suggesting notable buying interest.

Data tracked by StockTitan Argus on the day of publication.

Key Figures

PDB input-output: 800 V-to-6 V GaNFast FET count: 16 FETs FET rating: 650 V, 11 mΩ +5 more

8 metrics

PDB input-output 800 V-to-6 V Navitas 800 V-to-6 V DC-DC power delivery board for AI racks

GaNFast FET count 16 FETs GaNFast FETs on the 800 V-to-6 V PDB

FET rating 650 V, 11 mΩ Rating of GaNFast FETs in DFN8×8 dual-cooled package

Peak efficiency 97.5% Target efficiency of Navitas 800 V-to-6 V PDB

Switching frequency 1 MHz Operating frequency of the PDB

Power density 2100 W/in³ Power density enabled by the PDB design

SiC module voltages 2300 V and 3300 V Ultra-high-voltage GeneSiC SiC power modules for SSTs

Shelf registration size $250,000,000 S-3ASR shelf capacity filed May 11, 2026

Market Reality Check

Price: $25.08 Vol: Volume 25,047,986 is belo...

low vol

$25.08 Last Close

Volume Volume 25,047,986 is below the 20-day average of 36,646,141, suggesting no extreme pre‑news activity. low

Technical Shares trade well above the 200-day MA of 10.68 at a pre-news price of 25.86, indicating a strong existing uptrend.

Peers on Argus

NVTS was up 4.02% pre-news. Peers showed mixed moves: HIMX +4.19%, LASR +5.49%, ...

NVTS was up 4.02% pre-news. Peers showed mixed moves: HIMX +4.19%, LASR +5.49%, CEVA +8.08%, AOSL +17.25%, while MXL fell 3.22%, pointing to stock-specific drivers rather than a uniform sector rotation.

Previous Partnership,AI Reports

3 past events · Latest: Dec 08 (Positive)

Same Type Pattern 3 events

Date	Event	Sentiment	Move	Catalyst
Dec 08	AI partnership India	Positive	+1.3%	Long-term GaN partnership to accelerate AI and electrification markets in India.
Apr 09	AI power converter	Positive	+16.6%	Great Wall partnership for 2.5kW high-density DC-DC converter for AI data centers.
Apr 03	AI power architecture	Positive	-16.0%	Next-gen 400V-DC architecture with record power density for AI data centers.

Pattern Detected

Partnership/AI announcements have produced mixed reactions, including both double-digit gains and losses.

Recent Company History

Recent partnership and AI-related announcements for Navitas show consistent focus on high-density power solutions for AI data centers. In Dec 2025, a strategic GaN partnership in India saw a modest positive move. Two Great Wall power-architecture releases in Apr 2025 delivered world-leading density and efficiency but generated opposite share reactions, including a double-digit decline. Today’s NVIDIA MGX ecosystem collaboration continues this pattern of AI data-center partnerships emphasizing advanced GaN and SiC power technologies.

Historical Comparison

+0.6% avg move · Past partnership/AI releases for NVTS saw an average move of 0.62%, with both double-digit gains and...

partnership,AI

+0.6%

Average Historical Move partnership,AI

Past partnership/AI releases for NVTS saw an average move of 0.62%, with both double-digit gains and declines, underscoring volatile reactions to strategic AI collaborations.

Partnership news has evolved from regional GaN adoption and 400V AI architectures toward deeper ecosystem roles, now extending into NVIDIA’s MGX AI factory infrastructure.

Regulatory & Risk Context

Active S-3 Shelf · $250,000,000

Shelf Active

Active S-3 Shelf Registration 2026-05-11

$250,000,000 registered capacity

An effective S-3ASR shelf filed on 2026-05-11 allows Navitas to offer up to $250,000,000 in various securities from time to time, as detailed in the shelf prospectus. This provides flexibility to raise capital alongside AI and partnership initiatives.

Market Pulse Summary

The stock surged +19.3% in the session following this news. A strong positive reaction aligns with N...

Analysis

The stock surged +19.3% in the session following this news. A strong positive reaction aligns with Navitas’ ongoing strategy of embedding its GaN and SiC technology into AI data-center ecosystems. Prior partnership/AI news saw mixed moves despite technical strength, so sustained gains could depend on how investors weigh this NVIDIA MGX collaboration against recent insider selling and available capital-raising capacity under the $250,000,000 shelf.

Key Terms

dc-dc, gallium nitride, silicon carbide, wide-bandgap, +4 more

8 terms

dc-dc technical

"Navitas’ 800 V-to-6 V DC-DC power delivery board (PDB) is being shown..."

A dc-dc is an electronic power converter that changes one direct-current voltage level to another, like a small transformer for batteries or electronic circuits. Investors care because these components determine how efficiently devices use power, affect product size and battery life, and can influence manufacturing costs and reliability—traits that impact a maker’s competitiveness and profit margins much like a car’s fuel efficiency affects its appeal and running costs.

gallium nitride medical

"GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC)..."

Gallium nitride is a durable semiconductor material used to make electronic components that switch faster, handle higher voltages, and waste less energy than older silicon parts. Think of it as a lighter, more efficient motor in an appliance: it lets devices shrink, run cooler and save power, which can lower manufacturing costs, enable new products and boost sales or margins for companies that adopt it—key factors investors watch.

silicon carbide technical

"GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors..."

Silicon carbide is a hard, durable material made from silicon and carbon, often used in industrial applications like cutting tools and electronics. Its ability to withstand high temperatures and conduct electricity efficiently makes it valuable in manufacturing advanced electronic devices. For investors, companies working with silicon carbide are seen as key players in the growing market for high-performance electronics and energy-efficient technologies.

wide-bandgap technical

"Navitas provides a comprehensive portfolio of wide-bandgap (WBG) power technologies..."

Wide-bandgap describes a class of semiconductor materials whose internal energy “gap” is larger than in conventional silicon, meaning electrons need more energy to jump and conduct. Think of it as a wider doorway that lets devices handle higher voltages, hotter temperatures and faster switching with less energy loss; investors care because wide-bandgap chips enable smaller, more efficient power electronics and electric vehicles, creating potential for stronger product demand and higher margins.

mosfets technical

"Generation 5 technology 1200 V SiC MOSFETs."

A MOSFET is a tiny electronic switch used inside chips and power circuits to control the flow of electricity, functioning much like a faucet that opens and closes to let current move when needed. Investors care because MOSFETs directly affect how fast, efficient and small electronic devices and power systems can be, so supply, performance improvements or cost changes in MOSFETs can impact manufacturers’ margins, product competitiveness and capital spending.

solid-state transformers technical

"supporting critical applications such as solid-state transformers (SSTs)..."

A solid-state transformer is an electrical device that uses power electronics instead of heavy metal coils to change voltage and steer electricity, acting like a digitally controlled, much lighter version of a traditional transformer. For investors, it matters because these units can boost efficiency, add fast remote control and protection features, and enable modern grid uses — such as electric-vehicle charging and renewable energy integration — which can change infrastructure costs and create new technology markets.

gpu technical

"allows for extremely close integration with the GPU board..."

A GPU (graphics processing unit) is a specialized computer chip designed to handle many calculations at once, originally for rendering images and video but now widely used for tasks like artificial intelligence, data analysis and high-performance computing. Investors watch GPU demand and prices because strong sales often signal growth for chip makers and their customers, affect profit margins and capital spending, and can forecast wider trends in gaming, AI adoption and cloud services.

mhz technical

"operating at 1 MHz switching frequency..."

MHz (megahertz) is a unit that measures frequency — the number of million cycles per second — commonly used for radio waves, wireless spectrum, and electronic clock speeds. For investors, MHz signals capacity and performance: more MHz can mean faster processors, higher data throughput, or access to valuable radio spectrum for telecoms, which influences product capability, market competitiveness, and potential revenue. Think of MHz like highway lanes: more lanes let more traffic move at once.

AI-generated analysis. Not financial advice.

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TORRANCE, Calif., June 03, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast^™ gallium nitride (GaN) and GeneSiC^™ silicon carbide (SiC) power semiconductors, was honored to participate in NVIDIA's Partner Ceremony held on May 29^th, 2026, at the Taipei Nangang Exhibition Center. The event brought together key ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration to accelerate the development of next-generation AI data centers powered by emerging 800 VDC rack architectures.

Navitas’ 800 V-to-6 V DC-DC power delivery board (PDB) is being shown at NVIDIA's AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, June 2^nd–June 5^th. Powered by Navitas GaNFast technology, the PDB eliminates the need for a traditional 48 V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability, and valuable real estate.

The PDB features 16 GaNFast FETs rated at 650 V, 11 mOhms, in the latest DFN8×8 dual-cooled package, aiming 97.5% peak efficiency, operating at 1 MHz switching frequency, and enabling a power density of 2100 W/in³. Approximately 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency.

“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” said Chris Allexandre, President and CEO of Navitas. “Through our collaboration with NVIDIA within the MGX™ ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”

Navitas provides a comprehensive portfolio of wide-bandgap (WBG) power technologies that form the foundation of next-generation AI factory infrastructure. Its GeneSiC silicon carbide (SiC) solutions enable efficient power delivery from the grid to the AI compute rack, supporting critical applications such as solid-state transformers (SSTs) with ultra-high-voltage 2300 V and 3300 V SiC power modules, and high-power three-phase power supply units (PSUs), powered by the latest Generation 5 technology 1200 V SiC MOSFETs. Together, these technologies help AI data centers achieve higher efficiency, greater power density, and enhanced system reliability at scale.

Navitas' GaNFast™ technology delivers high-frequency, high-efficiency DC-DC power conversion required to support the rapidly growing power demands of AI GPUs. Leveraging the superior switching performance of GaN, Navitas solutions enable MHz-frequency operation, higher power density, and faster transient response, allowing power to be delivered more efficiently from the rack level directly to the GPU.

Through its comprehensive portfolio of GaN and SiC technologies, Navitas continues to collaborate closely with NVIDIA within the MGX™ ecosystem, helping enable open, modular AI infrastructure architectures and accelerating the industry's transition toward next-generation AI factories.

Two pictures:

1. Navitas TW Country Manager Stacey Cho with NV executive team.
2. Navitas 800 V-6 V PDB board on MGX Ecosystem display.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™  high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

Cautionary Statement Regarding Forward-Looking Statements

This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

Photos accompanying this announcement are available at 

https://www.globenewswire.com/NewsRoom/AttachmentNg/7be05833-6d8e-4343-a221-1385f46ec7bf

https://www.globenewswire.com/NewsRoom/AttachmentNg/a9760d40-62a8-4f9a-8c19-e28d678e1854

FAQ

What did Navitas (NVTS) announce about its collaboration with the NVIDIA MGX ecosystem on June 3, 2026?

Navitas announced collaboration within the NVIDIA MGX AI Factory ecosystem to support 800 VDC AI infrastructure. According to Navitas, its GaNFast and GeneSiC technologies aim to boost power density, efficiency, and thermal performance in next-generation AI data center racks.

What is Navitas' 800 V-to-6 V GaNFast PDB for NVIDIA MGX AI servers?

Navitas' 800 V-to-6 V GaNFast PDB is a DC-DC power delivery board designed for AI server racks. According to Navitas, it removes the 48 V intermediate bus stage, targeting 97.5% peak efficiency, 1 MHz switching, and 2100 W/in³ power density.

How does Navitas' GaNFast technology benefit 800 VDC AI data centers using NVTS solutions?

Navitas' GaNFast technology supports high-frequency, high-efficiency DC-DC conversion for AI GPUs. According to Navitas, GaN enables MHz-frequency operation, higher power density, faster transient response, and more efficient power delivery from rack level directly to GPU boards in 800 VDC architectures.

What role do Navitas GeneSiC SiC solutions play in AI factory infrastructure for NVTS investors?

Navitas GeneSiC SiC solutions support power delivery from the grid to AI compute racks. According to Navitas, applications include solid-state transformers using 2300 V and 3300 V SiC power modules and high-power three-phase PSUs with 1200 V Generation 5 SiC MOSFETs.

Where is Navitas demonstrating its 800 V-to-6 V PDB for NVIDIA MGX at COMPUTEX 2026?

Navitas is displaying its 800 V-to-6 V PDB in the NVIDIA AI Factory MGX Ecosystem Showcase at COMPUTEX 2026 in Taipei. According to Navitas, the board’s ultra-low profile enables close GPU integration, improving transient performance and power distribution efficiency.

What are the key technical specs of Navitas' 800 V-to-6 V GaNFast PDB highlighted for NVTS shareholders?

The PDB uses 16 GaNFast FETs rated at 650 V, 11 mΩ, in DFN8×8 dual-cooled packages. According to Navitas, it targets 97.5% peak efficiency, 1 MHz switching, 2100 W/in³ power density, and an ultra-thin profile about 20% thinner than a mobile phone.