Navitas Semiconductor Corporation develops next-generation power semiconductors built around gallium nitride and silicon carbide technologies. Its GaNFast power ICs integrate GaN power, drive, control, sensing and protection functions, while GeneSiC devices serve high-voltage SiC power applications. Company updates frequently address AI data centers, performance computing, energy and grid infrastructure, industrial electrification, e-mobility, telecommunications and fast-charging markets.
Recurring Navitas news covers financial results, the company’s shift toward high-power markets, product platforms such as DC-DC power delivery boards, technology licensing and supply-chain partnerships, and governance changes including finance leadership and board appointments.
Navitas Semiconductor (NVTS) unveiled a 2300 V silicon carbide power module family for energy infrastructure and grid applications. The G4H08MT23GB4 full-bridge modules use its fourth-generation GeneSiC Trench-Assisted Planar architecture and have 8 mΩ on-resistance. Navitas designed the family to improve efficiency and power density in solid-state transformers, grid-scale battery storage, solar inverters and megawatt EV charging.
Samples are available immediately. The family will undergo Navitas' internal AEC-Plus reliability qualification, which extends beyond AEC-Q101 and JEDEC testing requirements; qualification is not presented as completed.
Navitas Semiconductor (Nasdaq: NVTS) will report third-quarter 2026 financial results after the market close on November 3, 2026.
President and CEO Chris Allexandre and CFO Tonya Stevens will discuss results and the business outlook at 2:00 p.m. Pacific Time (5:00 p.m. Eastern Time). A live and archived audio webcast and presentation materials will be available on the company’s investor relations website.
Navitas Semiconductor (NVTS) announced a 24 kW power delivery board developed with NVIDIA to support the NVIDIA MGX ecosystem.
The board converts 800 VDC directly to 12 VDC in one stage, eliminating the intermediate 50 V-to-12 V conversion stage. It has a target efficiency of 97% at full load and power density exceeding 2,000 W/in³. Navitas says the design reduces power losses and board space. The board extends a portfolio that includes a previously announced 20 kW, 800 V-to-6 V board developed with NVIDIA. It is planned for display at NVIDIA’s AI Factory MGX Wall partner area at OCP Global Summit 2026.
Navitas Semiconductor (NVTS) has completed its acquisition of Claros, adding integrated voltage regulator technology to its AI infrastructure power portfolio. Claros develops integrated voltage regulators, or IVRs, which bring power conversion closer to processors. The transaction extends Navitas’ portfolio across the power-delivery chain, from the grid to the processor, alongside its existing gallium nitride and silicon carbide technologies.
Navitas expects the acquisition to more than double its identified 2030 serviceable addressable market to over $8 billion, adding at least $3.5 billion from vertical power delivery and IVR markets. Its existing identified opportunity includes $3.5 billion for gallium nitride and high-voltage silicon carbide, plus approximately $1 billion from new JFET technology. Navitas will present Claros’ technology at a webinar on October 20, 2026.
Navitas Semiconductor (NVTS) and Microchip Technology (MCHP) have collaborated on an 800V reference design for AI data center rack power applications. The design converts 800V DC to 6V DC and aligns with the Open Compute Project power standard. It combines Navitas’ GaNFast gallium nitride power devices with Microchip’s digital signal controllers and hardware-based security.
Navitas targets up to 96% peak efficiency at full load with a 1 MHz switching frequency and power density of 2,100 W/in³. Microchip’s TA100 security device supports secure boot, trusted firmware updates and key management. The design will be supported by a reference board, software and documentation. The companies will showcase the solution at Microchip’s OCP Event on October 12–15, 2026, in San Jose, California.
Navitas Semiconductor (NVTS) won a U.S. Army award to develop 10 kV silicon carbide power semiconductors under the ALATTIS program.
The prototype project aims to develop and validate a domestic manufacturing process for silicon carbide devices rated at least 10 kV. It targets 10 kV insulated-gate bipolar transistors (IGBTs) and associated PiN diode technologies. The Army Research Laboratory sponsors the project. Navitas’s existing GeneSiC portfolio spans voltage ratings from 650 V to 6.5 kV.
Magnachip Semiconductor (MX) announced that Navitas Semiconductor (NVTS) has agreed to make a $5 million strategic equity investment in Magnachip via a privately negotiated stock purchase agreement. Magnachip will issue and sell 1,461,988 new common shares to Navitas at $3.42 per share, with closing expected on or about September 24, 2026, subject to customary conditions.
The investment deepens the companies’ silicon carbide partnership announced in July 2026, under which Magnachip licenses Navitas’ GeneSiC Trench-Assisted Planar technology for 1,200 V, 2,300 V, 3,300 V and higher-voltage applications and gains access to Navitas’ SiC supply chain and materials ecosystem. Magnachip plans to port, qualify and internalize this technology at its South Korea fabrication facility, with initial target markets including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems.
Navitas Semiconductor (NVTS) will participate in the Citi 2026 Global TMT Conference at the New York Hilton Midtown Hotel. The company’s President and CEO, Chris Allexandre, and CFO, Tonya Stevens, will host a fireside chat at 1:15 p.m. Eastern Time on Tuesday, September 8, 2026.
A live and archived audio webcast of the fireside chat will be accessible in the Events section of Navitas’ Investor Relations website. Portfolio managers and analysts can request meetings with management through their Citi representative.
Navitas Semiconductor (Nasdaq: NVTS) announced that first shipments of its U.S.-manufactured 5th Generation GaNFast™ power semiconductors, produced in partnership with GlobalFoundries, will begin in September 2026. The devices are manufactured on GF’s 200 mm GaN-on-silicon line in Burlington, Vermont.
The long-term strategic partnership, initiated in November 2025, combines Navitas’ proprietary GaNFast technology and over 300 issued and pending GaN/SiC patents with GF’s high-volume U.S. production capabilities to provide a trusted domestic supply of advanced GaN power semiconductors for AI infrastructure, high-performance computing, industrial electrification, and critical national security applications.
The initial Gen 5 GaNFast family is expected to include 650 V GaN FETs with RDS(ON) options of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ, with first wafers shipping in September, internal samples in October, and strategic customer samples targeted before year-end.
Navitas (Nasdaq: NVTS) signed a definitive agreement to acquire power‑management firm Claros, which develops vertical power delivery (VPD) and integrated voltage regulator (IVR) technology for next‑generation AI data centers. The transaction is valued at up to approximately $232.8 million, based on Navitas’ August 21, 2026 share price.
According to Navitas, the deal is expected to complete its grid‑to‑xPU high‑power portfolio, enabling power conversion from ultra‑high‑voltage grid down to AI processors. The acquisition is projected to more than double Navitas’ 2030 serviceable addressable market to over $8 billion. Boards of both companies unanimously approved the deal, which is expected to close before year‑end 2026, subject to regulatory and other customary conditions. Navitas expects revenue acceleration and margin expansion from 2028/2029 onward, while maintaining its current path to profitability under the Navitas 2.0 strategy.