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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
Access curated press releases and analysis covering earnings reports, product launches, and sustainability initiatives. Stay informed about NVTS' leadership in energy-efficient power conversion technologies serving mobile, EV, and data center markets.
Discover updates on patent milestones, manufacturing expansions, and industry collaborations that demonstrate Navitas' technical expertise in high-frequency power ICs. Our collection ensures you never miss critical developments impacting this semiconductor innovator.
Bookmark this page for streamlined access to verified NVTS updates. Check regularly for new insights into GaNFast technology advancements and their global impact on power electronics efficiency.
Navitas Semiconductor (NVTS) has announced that its portfolio of 3.2kW, 4.5kW, and 8.5 kW AI data center power supply unit (PSU) designs exceed the new 80 PLUS 'Ruby' certification, the highest efficiency standard for data center PSUs. The Ruby certification, announced in January 2025, requires 96.5% efficiency and sets a 1% higher system efficiency across most load conditions compared to the previous Titanium standard.
Each Ruby-certified 3.2 kW CRPS185 PSU can save up to 420 kilowatt-hours over three years, equivalent to over 400 kg of CO2 emissions reduction. Navitas' solutions, powered by GaNSafe™ ICs and GeneSiC™ Gen 3 'Fast' SiC MOSFETs, have achieved notable milestones, including a 40% smaller 3.2 kW CRPS, a 4.5 kW CRPS with 137 W/in3 density and 97% efficiency, and the world's first 8.5 kW AI data center power supply reaching 98% efficiency.
Navitas Semiconductor (Nasdaq: NVTS) has unveiled groundbreaking 650V bi-directional GaNFast ICs and high-speed isolated gate-drivers, enabling a shift from two-stage to single-stage topologies in power conversion. This innovation targets multi-billion dollar markets including EV charging, solar inverters, energy storage, and motor drives.
The new technology consolidates traditional two-stage power converters into a single, high-efficiency stage, eliminating bulky capacitors and input inductors. The solution delivers impressive benefits:
- Up to 10% cost savings
- 20% energy savings
- Up to 50% size reductions
The initial product lineup includes the NV6427 (100 mΩ) and NV6428 (50 mΩ) GaNFast ICs, alongside NV1702 and NV1701 IsoFast drivers. A leading EV and solar micro-inverter manufacturer has already begun implementing these single-stage BDS converters. The bi-directional GaNFast ICs are currently available in mass production, while IsoFast samples are available to qualified customers.
Navitas Semiconductor (NVTS) reported Q4 2024 and full-year financial results, highlighting record GaN revenues despite industry headwinds. Total revenue for Q4 2024 was $18.0 million, down from $26.1 million in Q4 2023. Full-year 2024 revenue grew 5% to $83.3 million.
The company secured $450 million in customer design-wins and expanded its customer pipeline by 92% to $2.4 billion. Notable growth was seen in Data Center and EV sectors, with AI driving the fastest-growing end-market. The company maintains a strong cash position of $86.7 million.
For Q1 2025, Navitas expects revenues between $13.0-15.0 million with a non-GAAP gross margin of approximately 38%. The company plans to unveil breakthrough power conversion technology on March 12th, expected to drive improvements in energy efficiency across multiple markets.
Navitas Semiconductor (NVTS) will showcase its latest advances in GaN and SiC technologies at APEC 2025 in Atlanta from March 16-20. The company will unveil a new 'paradigm in power conversion' during a live-streamed event on March 12th.
Key highlights include the world's first 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply delivering 4.5 kW with 137 W/in3 and over 97% efficiency. The company will also present GaNSlim™, a new generation of integrated GaN power ICs for mobile devices and laptops, and automotive-qualified Gen-3 Fast SiC MOSFETs with trench-assisted planar technology.
The technology showcase demonstrates Navitas' commitment to transitioning from legacy silicon to next-generation power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) has announced a groundbreaking live-streamed event scheduled for March 12th, 2025, where it will unveil significant innovations in power conversion technology. The company will present new developments in both semiconductor and system innovations, expected to enhance energy efficiency and power density while accelerating the adoption of gallium nitride (GaN) and silicon carbide (SiC) technologies over traditional silicon.
The event will feature presentations from company co-founders Gene Sheridan (CEO), Dan Kinzer (CTO, COO), and Jason Zhang (VP Engineering), who will detail the technology, provide specific application examples, and discuss market impacts and business opportunities. The presentation will be streamed twice, at 8 am PST and 6 pm PST, with Chinese and English language options available.
Navitas Semiconductor (NVTS) has announced its schedule to report Q4 and full year 2024 financial results on Monday, February 24th, 2025, after market close. The company will host a conference call and webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern on the same day, where management will present financial results and answer analyst questions.
Following the earnings call, Navitas will participate in three major investor events: the Susquehanna 14th Annual Technology Conference (February 28th, virtual), the Morgan Stanley Technology, Media & Telecom Conference (March 3rd, San Francisco), and the 37th Annual Roth Conference (March 17th, Dana Point). CFO Todd Glickman will attend all events, while CEO Gene Sheridan will join for the Morgan Stanley conference, which includes a fire-side chat at 2:35pm Pacific.
Navitas Semiconductor (NVTS) announced the integration of its GaNFast and GeneSiC power technologies into Dell's family of notebook adapters, ranging from 60W to 360W. The technology enables 3x more power and 3x faster charging in half the size and weight compared to traditional silicon power devices.
The implementation supports Dell's new AI notebooks featuring Neural Processor Units (NPUs). The adapters demonstrate significant environmental benefits, requiring up to 50% less plastic and utilizing post-recycled materials. Each GaNFast power IC saves 4 kg CO2, while each SiC MOSFET saves 25 kg CO2 compared to legacy silicon chips.
The collaboration between Dell and Navitas, which began in 2020, focuses on improving charging speed, efficiency, size, weight, and environmental impact.
Navitas Semiconductor (Nasdaq: NVTS), a leading power semiconductor company specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in an upcoming CICC investor call. The event is scheduled for Wednesday, December 11th at 6pm US Pacific time (9pm US Eastern, December 12th at 10am Beijing/Shanghai/Hong Kong time).
The group call will feature presentations from Gene Sheridan (CEO), Todd Glickman (CFO), and Charles Zha (VP, GM Navitas China). Interested participants can register by contacting Carla Lai at the CICC Research Department.
Navitas Semiconductor (NVTS) will showcase breakthrough technologies at CES 2025 in Las Vegas, focusing on AI data centers, EVs, and mobile applications. The company will present several innovations including the world's only 650V bi-directional GaNFast power ICs, an 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply at 137 W/in3.
Key highlights include automotive-qualified Gen-3 Fast SiC MOSFETs, GaNSlim integrated solutions for mobile devices, and SiCPAK high-power modules for EV charging. The company's technologies aim to advance the transition from legacy silicon to next-generation GaN and SiC power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) has appointed Dr. Ranbir Singh to its board of directors. Dr. Singh, formerly Executive Vice President at Navitas and founder/CEO of GeneSiC Semiconductor, brings over 20 years of Silicon Carbide (SiC) innovation experience, including 8 years at Wolfspeed. As a recognized leader in power electronics, he holds numerous accolades, including over 200 published papers and 40 US patents.
Dr. Singh joined Navitas through the GeneSiC acquisition, which he founded in 2004. He holds degrees from the Indian Institute of Technology and North Carolina State University, where he was inducted into the ECE Alumni Hall of Fame in 2022. His appointment strengthens Navitas' position in next-generation power semiconductors, particularly in GaN power ICs and SiC technology.
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