Navitas Semiconductor Corp Stock Price, News & Analysis

Navitas Semiconductor (Nasdaq: NVTS) has received the 'Outstanding Technical Collaboration Award' from VREMT Energy, a Geely subsidiary. The companies established a joint R&D Laboratory to advance EV power-system development using Navitas' GaNFast and GeneSiC semiconductor technologies.

Key achievements include the introduction of the industry's first automotive 'AEC-Plus' qualified SiC MOSFETs in HV-T2PaK package and automotive-grade GaNSafe ICs with AEC-Q100 and AEC-Q101 qualifications. These technologies enable improved efficiency, weight, and size for EV components, supporting major automotive OEMs including Volvo, ZEEKR, and SMART.

Navitas Semiconductor (NVTS) has partnered with BrightLoop to integrate its GeneSiC MOSFET technology into BrightLoop's hydrogen fuel-cell chargers for heavy-duty agricultural transportation. The collaboration features BrightLoop's high-performance multiverters achieving power conversion efficiencies over 98% and power densities up to 35 kW/kg and 60 kW/L. Navitas' automotive-qualified Gen 3 'Fast' SiC MOSFETs are integrated into BrightLoop's 250 kW HV-DC/DC converter, capable of 950VDC output at 480A, with potential for megawatt power scaling. The GeneSiC technology offers superior performance metrics, including up to 25°C lower case temperature, 3x longer life than competitors, and 20% lower RDS(ON) at high temperatures. The partnership aims to advance high-power density and high-reliability converter solutions for the hydrogen fuel-cell charging market.

Navitas Semiconductor (NVTS), a leading manufacturer of gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in two upcoming investor events. The company will attend the Baird 2025 Global Consumer, Technology & Services Conference on June 3, featuring a fireside chat with CEO Gene Sheridan from 8:30-9:00 ET at the InterContinental Barclay in New York. Additionally, NVTS will participate in the Rosenblatt 5th Annual Technology Summit focused on AI on June 11, with a virtual fireside chat from 10:00-10:45 ET featuring CEO Gene Sheridan and CFO Todd Glickman. Both events will be accessible via webcast and replay through the company's website.

Navitas Semiconductor (NVTS) has announced a strategic collaboration with NVIDIA to develop next-generation 800V HVDC architecture for data centers. This partnership aims to support NVIDIA's 'Kyber' rack-scale systems powering GPUs like Rubin Ultra. The new architecture will enable 1 MW IT racks and beyond, offering significant advantages over traditional 54V systems. Key benefits include: • 45% reduction in copper wire thickness • Up to 5% improvement in end-to-end power efficiency • 70% reduction in maintenance costs • Lower cooling costs Navitas will contribute its GaNFast™ and GeneSiC™ power semiconductors, featuring GaNSafe™ power ICs with advanced protection features and GeneSiC's proprietary 'trench-assisted planar' technology. The company has demonstrated its capabilities through recent achievements, including the world's first 8.5 kW AI data center power supply with 98% efficiency and a 12 kW PSU unveiled at Computex.

Navitas Semiconductor (NVTS) has unveiled a groundbreaking 12kW power supply unit (PSU) for hyperscale AI data centers, achieving an impressive 97.8% efficiency. The PSU is designed for high-power rack densities of 120 kW and complies with Open Rack v3 specifications. Key features include: - Utilizes Gen-3 Fast SiC MOSFETs and GaNSafe ICs - Features novel 'IntelliWeave™' digital platform - Achieves 30% reduction in power losses compared to existing solutions - Supports input voltage range of 180-305 VAC - Delivers 12kW output (above 207 VAC) or 10kW (below 207 VAC) - Implements comprehensive protection features This development represents a significant advancement in Navitas' AI power roadmap, quadrupling output power from 2.7kW to 12kW in just 24 months, addressing the growing power demands of modern GPU architectures in AI applications.

Navitas Semiconductor (NVTS) announces an "AI Tech Night" event in Taipei to showcase its next-generation OCP data center power supply unit (PSU) reference design. The company will demonstrate how its GaNSafe™ and GeneSiC™ technologies are revolutionizing AI data center infrastructure.

The event highlights Navitas' progression in PSU development, from their initial 2.7 kW CRPS offering 2x higher power density, to their groundbreaking 8.5kW AI data-center power supply achieving 98% efficiency. Their latest innovation, IntelliWeave™, combined with GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies of 99.3% and reduces power losses by 30%.

The company will also present the world's first mass-produced 650V Bi-Directional GaNFast™ power ICs and IsoFast™ high-speed isolated gate drivers, enabling a shift from two-stage to single-stage power topologies for optimized data center power supply design.

Navitas Semiconductor (NVTS) has appointed Cristiano Amoruso to its board of directors, effective immediately. Amoruso, former CEO of Suniva and partner at Lion Point Capital, brings significant operating expertise in technology and renewable energy industries. The appointment comes at a strategic time as Navitas aims to capitalize on multi-billion dollar market opportunities in GaN and SiC semiconductor technology, particularly for applications in datacenters, solar power plants, and electric vehicles.

Board Chair Richard Hendrix emphasized that Amoruso's appointment strengthens corporate governance and supports the company's path to profitability. Amoruso will stand for election as an independent Class I director at the company's 2025 annual stockholders' meeting alongside Gene Sheridan and Ranbir Singh.

Navitas Semiconductor (NVTS) reported Q1 2025 financial results with revenue of $14.0 million, down from $23.2 million in Q1 2024. The company posted a GAAP loss from operations of $25.3 million and non-GAAP loss of $11.8 million. Despite revenue decline, Navitas achieved significant technological milestones, including shipping over 250M GaN units with 100ppb field reliability and introducing the first production-released 650V bi-directional GaN ICs. The company announced a 12 kW platform for AI data centers and expanded into EV markets through a partnership with Changan. Cash position stood at $75.1 million as of March 31, 2025. Q2 2025 guidance projects revenue of $14.0-15.0 million with non-GAAP gross margin around 38.5%.

Navitas Semiconductor (NVTS) has introduced groundbreaking AEC-Plus qualified SiC MOSFETs in HV-T2Pak top-side cooled package, setting new reliability standards for automotive and industrial applications. The new 650V and 1200V 'trench-assisted planar' SiC MOSFETs feature industry-leading 6.45mm creepage for IEC compliance up to 1200V. The technology offers 20% lower on-resistance at high temperatures versus competitors and targets EV chargers, data centers, solar inverters, and HVAC drives. Key innovations include enhanced reliability testing beyond AEC-Q101 standards, optimized package design with NiNiP plating, and superior switching performance. The initial portfolio includes 1200V SiC MOSFETs (18-135 mΩ) and 650V variants (20-55 mΩ), with sub-15 mΩ versions planned for late 2025.