Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation

Rhea-AI Summary

Navitas (Nasdaq: NVTS) and EPFL unveiled a 250 kW Solid-State Transformer (SST) demonstrator that converts 3.3 kV AC to 800 V DC using GeneSiC 3300V and 1200V SiC MOSFETs and modules.

The single-stage, modular SST targets higher grid-to-rack efficiency and modularity for next-generation AI data centers; the demo will be exhibited at APEC 22–26 March in San Antonio (Navitas booth #2027).

Key Figures

Stock price move: -6.81% Current share price: $8.90 SST power rating: 250 kW +5 more

8 metrics

Stock price move -6.81% Change over prior 24 hours before this news

Current share price $8.90 Pre-news trading level

SST power rating 250 kW EPFL solid-state transformer demo platform

Grid input voltage 3.3 kV AC Input to SST platform

Data center bus voltage 800 V DC Output architecture enabled by SST

SiC device rating 3300 V Navitas GeneSiC UHV SiC MOSFETs used in SST

SiC device rating 1200 V Navitas GeneSiC HV SiC MOSFETs used in SST

APEC 2026 dates March 22–26, 2026 Conference where SST solution is exhibited

Market Reality Check

Price: $9.22 Vol: Volume 19,080,682 is clos...

normal vol

$9.22 Last Close

Volume Volume 19,080,682 is close to 20-day average of 19,296,226, suggesting no major volume spike into this news. normal

Technical Shares at $8.90 are trading above the $8.01 200-day MA but sit 49.97% below the 52-week high and 485.53% above the 52-week low.

Peers on Argus

NVTS is down 6.81% while peers are mixed: HIMX +2.52%, CEVA +2.89%, MXL +0.88%, ...

1 Up

NVTS is down 6.81% while peers are mixed: HIMX +2.52%, CEVA +2.89%, MXL +0.88%, AOSL -0.58%, LASR -6.76%. Only LASR appears in momentum scans, and with an opposite intraday direction flag earlier, pointing to stock-specific dynamics.

Previous AI Reports

5 past events · Latest: Feb 26 (Positive)

Same Type Pattern 5 events

Date	Event	Sentiment	Move	Catalyst
Feb 26	AI solutions exhibit	Positive	-3.7%	APEC 2026 exhibit plans for GaN and SiC AI data center power solutions.
Feb 09	AI DC-DC platform	Positive	+4.1%	Launch of 10 kW all-GaN 800 VDC DC-DC platform with high efficiency and density.
Nov 20	GF GaN partnership	Positive	-2.2%	Long-term GaN partnership with GlobalFoundries for AI datacenter and grid uses.
Oct 13	NVIDIA AI support	Positive	+26.1%	New GaN and SiC devices to support NVIDIA’s 800 VDC AI factory architecture.
May 21	12kW AI PSU launch	Positive	-4.5%	Launch of 12 kW GaN & SiC PSU achieving 97.8% efficiency for AI data centers.

Pattern Detected

AI-tagged announcements are generally positive in tone, but market reactions are mixed, with 3 divergences vs 2 alignments between upbeat AI news and price moves.

Recent Company History

Recent AI-related news shows Navitas emphasizing 800 VDC architectures and AI data center power. Prior AI headlines covered APEC 2026 exhibits, a 10 kW all-GaN 800 VDC DC-DC platform, a GlobalFoundries GaN manufacturing partnership, NVIDIA 800 VDC AI factory support, and a 12 kW GaN/SiC PSU for hyperscale AI centers. Today’s SST demo with EPFL extends that theme toward grid-to-rack 800 VDC infrastructure using GeneSiC SiC devices.

Historical Comparison

+3.9% avg move · AI-focused announcements have seen an average move of 3.94%. Today’s negative reaction contrasts wit...

AI

+3.9%

Average Historical Move AI

AI-focused announcements have seen an average move of 3.94%. Today’s negative reaction contrasts with that history and with several past AI wins that drew strong buying.

AI-tagged news traces a build-out of an 800 VDC AI power ecosystem, from high-efficiency PSUs and DC-DC platforms to NVIDIA-aligned devices and foundry partnerships, now extending into grid-level SST integration with EPFL.

Market Pulse Summary

This announcement highlights a 250 kW solid-state transformer platform converting 3.3 kV AC to 800 V...

Analysis

This announcement highlights a 250 kW solid-state transformer platform converting 3.3 kV AC to 800 V DC using Navitas’ 3300 V and 1200 V GeneSiC SiC MOSFETs, extending its AI data center and grid focus. It complements earlier AI-tagged launches around 800 VDC platforms, NVIDIA-aligned devices, and high-efficiency PSUs. Investors may watch how such demonstrations translate into design wins, revenue traction, and updates in future filings and AI-focused releases.

Key Terms

solid-state transformer, silicon carbide, mosfets, gallium nitride, +1 more

5 terms

solid-state transformer technical

"announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas."

A solid-state transformer is an electrical device that performs the same job as a traditional transformer—changing voltage and isolating circuits—but does so with fast-switching electronics instead of large coils of wire and oil-filled tanks. It can be smaller, more efficient, provide finer control over how power is delivered or routed, and enable features like two-way power flow and built-in monitoring. For investors, that means companies making or deploying them could benefit from spending on grid upgrades, electric vehicle charging, renewable integration, and smarter infrastructure, similar to how upgrading from a mechanical gearbox to a digital controller unlocks new capabilities.

silicon carbide technical

"Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers."

Silicon carbide is a hard, durable material made from silicon and carbon, often used in industrial applications like cutting tools and electronics. Its ability to withstand high temperatures and conduct electricity efficiently makes it valuable in manufacturing advanced electronic devices. For investors, companies working with silicon carbide are seen as key players in the growing market for high-performance electronics and energy-efficient technologies.

mosfets technical

"Silicon Carbide (SiC) Trench-Assisted Planar™ (TAP) MOSFETs and modules."

A MOSFET is a tiny electronic switch used inside chips and power circuits to control the flow of electricity, functioning much like a faucet that opens and closes to let current move when needed. Investors care because MOSFETs directly affect how fast, efficient and small electronic devices and power systems can be, so supply, performance improvements or cost changes in MOSFETs can impact manufacturers’ margins, product competitiveness and capital spending.

gallium nitride technical

"a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors"

Gallium nitride is a durable semiconductor material used to make electronic components that switch faster, handle higher voltages, and waste less energy than older silicon parts. Think of it as a lighter, more efficient motor in an appliance: it lets devices shrink, run cooler and save power, which can lower manufacturing costs, enable new products and boost sales or margins for companies that adopt it—key factors investors watch.

galvanically isolated technical

"This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface"

Galvanically isolated means two electrical systems are kept physically separate so there is no direct conductive path for electrical current between them. For investors this matters because isolation reduces the chance that a fault, interference, or ground loop in one system will damage the other, improving product reliability, safety and regulatory compliance—similar to how a sealed firewall prevents a house fire from spreading to the next unit, which can lower repair costs and liability risk.

AI-generated analysis. Not financial advice.

First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.

TORRANCE, Calif. and LAUSANNE, Switzerland, March 04, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most cosmopolitan technical university, announced exhibition of a 250kW SST solution at APEC 2026 in San Antonio Texas.

The Solid-State Transformer (SST) platform developed by the Power Electronics Laboratory of EPFL enables the grid architecture required by next-generation data centers, eliminating bulky low-frequency transformers while improving end-to-end efficiency. EPFL design uses single stage, modularized bridge rectifier SST topology for converting 3.3kV-AC to 800V-DC at 250 kW power and delivers enhanced performance and modularity. This is built using Navitas GeneSiC™ ultra-high voltage (UHV) 3300V and high voltage (HV) 1200V Silicon Carbide (SiC) Trench-Assisted Planar™ (TAP) MOSFETs and modules. The SST demonstrator is developed as part of the Power Electronics Laboratory’s project HeatingBits, aiming to deploy and showcase the latest technologies inside the EPFL’s actual data center.

“This engagement with EPFL demonstrates how next-generation medium-voltage power conversion can directly address the growing energy and thermal challenges inside AI data centers,” said Paul Wheeler, VP & GM of the SiC business unit at Navitas. “By combining our 3300V and 1200V GeneSiC™ MOSFETs and modules with a novel single-stage solid-state transformer architecture and advanced real-time control, we are enabling a scalable 800 V-DC distribution approach that delivers higher efficiency from the grid to the rack while creating new opportunities for heat reuse.”

“This novel solid-state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface between the medium-voltage AC grid and an 800 V-DC data center architecture, while serving as a real-world experimental environment for advanced distributed control,” said Drazen Dujic, Associate Professor and Director of the Power Electronics Laboratory at EPFL. “By leveraging Navitas UHV and HV SiC MOSFETs portfolio, EPFL was able to optimize system performance for the highest efficiency and optimal design margins for system robustness and reliability."  

APEC takes place from 22-26 March in San Antonio, TX. Representatives from both Navitas and the EPFL’s Power Electronics Laboratory will be available for further information at the Navitas booth #2027. Navitas can also be reached by email at info@navitassemi.com.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™  high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral^®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

About EPFL
The École Polytechnique Fédérale de Lausanne (EPFL) is a prestigious public research university in Switzerland, renowned for its excellence in science, technology, engineering, and mathematics (STEM) fields. It offers education at Bachelor’s, Master’s, and Doctoral levels and is home to more than 500 laboratories, with students, professors, and collaborators of more than 120 nationalities. Located on the shores of Lake Geneva, it is a vibrant, cosmopolitan institution that consistently ranks among the top universities in the world. EPFL collaborates with an important network of partners, including other universities and colleges, secondary schools and gymnasiums, industry and the economy, political circles, and the general public, with the aim of having a real impact on society.

Navitas Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

EPFL Contact Information
Prof. Drazen Dujic
Power Electronics Laboratory, EPFL
drazen.dujic@epfl.ch

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and EPFL and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and EPFL, and forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. These and other risk factors are discussed in the Risk Factors section of our respective annual reports on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents each of us may file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/f0162c8d-e943-4595-b3a3-9e7877fe9c38

FAQ

What did Navitas (NVTS) and EPFL demonstrate at APEC 2026?

They demonstrated a 250 kW single-stage Solid-State Transformer converting 3.3 kV AC to 800 V DC. According to the company, the system uses GeneSiC 3300V and 1200V SiC MOSFETs to target improved grid-to-rack efficiency for AI data centers.

How does the Navitas-EPFL SST support 800 V DC data center architectures?

The SST provides a galvanically isolated, modular interface to deliver 800 V DC distribution. According to the company, the design uses single-stage modular bridge rectifier topology for scalable, efficient medium-voltage to 800 V DC conversion at 250 kW.

Which GeneSiC devices power the EPFL SST demonstrator announced by NVTS?

The demonstrator uses GeneSiC ultra-high-voltage 3300V and high-voltage 1200V SiC TAP MOSFETs and modules. According to the company, those devices enable the system’s high-efficiency, high-voltage performance and design margins for robustness.

When and where will Navitas (NVTS) exhibit the SST demonstrator?

The SST demonstrator will be exhibited at APEC, 22–26 March 2026, in San Antonio, Texas at Navitas booth #2027. According to the company, Navitas and EPFL representatives will be available at the booth for more information.

What power capacity and conversion topology does the EPFL SST use in the NVTS demo?

The system is a 250 kW single-stage, modularized bridge rectifier SST converting 3.3 kV AC to 800 V DC. According to the company, this topology enhances modularity and end-to-end efficiency for data center grids.

How might the Navitas-EPFL SST affect AI data center energy efficiency?

The SST aims to reduce bulky low-frequency transformers and improve end-to-end efficiency from grid to rack. According to the company, the architecture enables scalable 800 V DC distribution and opportunities for heat reuse in AI data centers.