Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers

Navitas (Nasdaq: NVTS) unveiled a 10 kW all-GaN DC-DC platform for 800 VDC and +/-400 V architectures delivering up to 98.5% peak efficiency, 98.1% full-load efficiency, 1 MHz switching, and 2.1 kW/in³ power density in a full-brick (61×116×11 mm) package.

Rhea-AI Summary

Navitas (Nasdaq: NVTS) unveiled a 10 kW all-GaN DC-DC platform for 800 VDC and +/-400 V architectures delivering up to 98.5% peak efficiency, 98.1% full-load efficiency, 1 MHz switching, and 2.1 kW/in³ power density in a full-brick (61×116×11 mm) package.

The production-oriented design uses 650 V and 100 V GaNFast FETs in a three-level half-bridge with synchronous rectification and integrates auxiliary power and control; collaborative evaluations are underway and the platform debuts at APEC, March 22–26, 2026.

Positive

• Peak efficiency of 98.5% for 10 kW DC-DC conversion
• Full-load efficiency of 98.1% at 10 kW
• High switching frequency of 1 MHz enabling compact designs
• Power density of 2.1 kW/in³ in a full-brick (61×116×11 mm) package
• Supports 800 V→50 V and ±400 V→50 V architectures for HVDC AI data centers

Negative

• None.

Argus Feb 9 session

+4.06% close to close Open Argus

Details

News Market Reaction – NVTS

In the Feb 9 session, NVTS gained 4.06%, reflecting a moderate positive market reaction.

Data tracked by StockTitan Argus on the day of publication.

Market Context

This announcement extends Navitas’ AI data center roadmap with a 10 kW 800 V–to–50 V DC-DC platform ...

Analysis

This announcement extends Navitas’ AI data center roadmap with a 10 kW 800 V–to–50 V DC-DC platform delivering up to 98.5% peak efficiency and 2.1 kW/in³ power density. It complements earlier AI power milestones and partnerships focused on higher-efficiency PSUs and 800 VDC architectures. Investors may track adoption by key data center customers, follow-on design wins, and future updates comparing this module’s performance to existing AI power solutions as commercialization progresses.

Key Figures

DC-DC platform power: 10 kW Peak efficiency: 98.5% Full-load efficiency: 98.1% +5 more

DC-DC platform power

10 kW

All-GaN 800 V–to–50 V DC-DC platform for AI data centers

Peak efficiency

98.5%

10 kW DC-DC power platform

Full-load efficiency

98.1%

10 kW DC-DC platform at full load

Switching frequency

1 MHz

10 kW DC-DC platform operating frequency

Power density

2.1 kW/in³

Full-brick 61 × 116 × 11 mm package

Input voltage

800 VDC

800 V–to–50 V DC-DC architecture

Alternate architecture

+/-400 V–to–50 V

Supported HVDC data center architecture at 10 kW

Module dimensions

61 × 116 × 11 mm

Full-brick DC-DC package size

Previous AI Reports

5 past events · Latest: Nov 20

Same Type 5 events

1. Nov 20

   AI manufacturing partnership

   24h Move

   -2.2%

   Long-term GaN partnership with GlobalFoundries for AI datacenters and grid.

2. Oct 13

   AI device launch

   24h Move

   +21.1%

   New GaN and SiC devices supporting NVIDIA’s 800 VDC AI factory platform.

3. May 21

   AI PSU platform

   24h Move

   -4.5%

   Launch of 12 kW PSU achieving 97.8% efficiency for hyperscale AI centers.

4. May 15

   AI event showcase

   24h Move

   -1.0%

   “AI Tech Night” unveiling next-gen OCP PSU and GaNSafe/GeneSiC advances.

5. Mar 17

   Efficiency milestone

   24h Move

   +6.0%

   PSU designs exceeding 80 PLUS ‘Ruby’ efficiency standard for AI power.

24h Move is the share-price change in the day after each event; other market factors may also have contributed.

Key Terms

dc-dc, gallium nitride, silicon carbide, fet, +3 more

7 terms

dc-dc technical

"10 kW DC-DC power platform delivering up to 98.5% peak efficiency"

A dc-dc is an electronic power converter that changes one direct-current voltage level to another, like a small transformer for batteries or electronic circuits. Investors care because these components determine how efficiently devices use power, affect product size and battery life, and can influence manufacturing costs and reliability—traits that impact a maker’s competitiveness and profit margins much like a car’s fuel efficiency affects its appeal and running costs.

gallium nitride technical

"a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC)"

Gallium nitride is a durable semiconductor material used to make electronic components that switch faster, handle higher voltages, and waste less energy than older silicon parts. Think of it as a lighter, more efficient motor in an appliance: it lets devices shrink, run cooler and save power, which can lower manufacturing costs, enable new products and boost sales or margins for companies that adopt it—key factors investors watch.

silicon carbide technical

"GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors"

Silicon carbide is a hard, durable material made from silicon and carbon, often used in industrial applications like cutting tools and electronics. Its ability to withstand high temperatures and conduct electricity efficiently makes it valuable in manufacturing advanced electronic devices. For investors, companies working with silicon carbide are seen as key players in the growing market for high-performance electronics and energy-efficient technologies.

fet technical

"employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge"

FET stands for frozen embryo transfer, a fertility procedure in which an embryo created earlier and stored in cold conditions is thawed and implanted into a uterus. For investors, FET matters because its success rates, demand trends, regulatory changes, and cost structure directly affect clinics, drugmakers, and device suppliers in the reproductive-health sector — think of it as restarting and using something saved for later, where outcomes influence revenue and patient volume.

synchronous rectification technical

"three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak"

A technique used in electronic power converters where active switches replace conventional one-way diodes to conduct current more efficiently during certain parts of the switching cycle. Think of swapping a rough, one-way flap for a low-friction door: it reduces wasted energy and heat, allowing smaller, cooler and often cheaper power supplies. For investors, it affects product performance, manufacturing costs and energy efficiency—factors that can influence a maker’s margins, market competitiveness and demand for power-sensitive devices.

hvdc technical

"enable high–power-density module designs for next-generation HVDC AI data centers"

HVDC, short for high‑voltage direct current, is a way of transmitting electricity as a steady one‑direction flow over long distances or undersea links instead of the usual back‑and‑forth alternating current. Like a high‑speed, nonstop pipeline for power, it cuts energy loss and can link different power grids or distant renewable sites more efficiently. Investors watch HVDC projects because they are large, long‑lived infrastructure investments that affect utility revenue, grid capacity, construction and regulatory risk, and the economics of power supply.

mosfets technical

"ultra-high-voltage GeneSiC silicon carbide (SiC) MOSFETs in power module"

A MOSFET is a tiny electronic switch used inside chips and power circuits to control the flow of electricity, functioning much like a faucet that opens and closes to let current move when needed. Investors care because MOSFETs directly affect how fast, efficient and small electronic devices and power systems can be, so supply, performance improvements or cost changes in MOSFETs can impact manufacturers’ margins, product competitiveness and capital spending.

AI-generated analysis. How Rhea-AI works. Not financial advice.

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Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures.

TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and 1 MHz switching frequency, enabling unprecedented power density to support the rapid, large-scale expansion of next-generation AI data centers.

The all-GaN 10 kW 800 V–to–50 V DC-DC platform employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency and 98.1% full load efficiency in a full-brick (61 × 116 × 11 mm) package, achieving 2.1 kW/in³ power density.

The resulting production-oriented platform supports 800 V–to–50 V and + / - 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers. Read more on Navitas’ Whitepaper on “Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure”.

"The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”

The 10 kW DC-DC platform is being evaluated by key data center customers through collaborative development and will make its debut at the Navitas booth (#2027) at APEC, March 22–26 in San Antonio, TX.

To find out more information about this solution please reach out to your Navitas representative or write to info@navitassemi.com.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™  high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral^®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section beginning on p. 15 of our annual report on Form 10-K for the year ended December 31, 2024, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/d158f1c9-6413-4d77-beed-d1aa64c6bd23

FAQ

AI-generated questions and answers. How Rhea-AI works. Not financial advice.

What efficiency does Navitas' 10 kW DC-DC platform (NVTS) achieve?

The platform reaches up to 98.5% peak efficiency, with 98.1% at full load. According to the company, those figures reflect the all-GaN three-level half-bridge design using 650 V and 100 V GaNFast FETs and synchronous rectification.

How compact is Navitas' 10 kW full-brick DC-DC module (NVTS)?

The module fits a full-brick 61×116×11 mm package achieving 2.1 kW/in³ power density. According to the company, 1 MHz switching and GaNFast FETs enable the high power density for AI data center use.

Which data center architectures does Navitas' 10 kW DC-DC support (NVTS)?

It supports 800 V→50 V and ±400 V→50 V HVDC architectures at 10 kW. According to the company, the platform integrates auxiliary power and control to simplify adoption in next-gen AI data centers.

When and where will Navitas demonstrate the 10 kW DC-DC platform (NVTS)?

Navitas will debut the platform at APEC, March 22–26, 2026, in San Antonio, TX. According to the company, the solution will be shown at booth #2027 with collaborative development updates from key data center customers.

What semiconductor technology powers Navitas' 10 kW DC-DC solution (NVTS)?

The solution is all-GaN using 650 V and 100 V GaNFast FETs in a three-level half-bridge. According to the company, this GaN-based approach enables the high switching frequency, efficiency, and power density reported.