Navitas Launches Industry-Leading 12kW GaN & SiC Platform, Achieving 97.8% Efficiency for Hyperscale AI Data Centers
- Achieved 97.8% efficiency in power delivery
- Quadrupled output power from 2.7kW to 12kW in 24 months
- 30% reduction in power losses compared to existing solutions
- Compliant with industry standards (Open Rack v3 and OCP guidelines)
- Enhanced protection features including short-circuit and ESD protection
- Limited operating temperature range of -5 to 45°C
- Power output reduces to 10kW when input voltage is below 207 VAC
Insights
Navitas' new 12kW PSU platform represents a significant technical breakthrough for AI data center power delivery with industry-leading 97.8% efficiency.
Navitas has unveiled a breakthrough in power delivery with their new 12kW power supply unit (PSU) platform specifically engineered for hyperscale AI data centers. This is a substantial leap from their previous capabilities, representing a 4x increase in output power in just two years. The new PSU is designed to meet the stringent requirements of high-density server racks that can reach 120kW per rack - critical for supporting power-hungry AI workloads.
The technical implementation is remarkably sophisticated, combining the company's Gen-3 Fast SiC MOSFETs with 4th generation GaNSafe ICs in a 3-phase interleaved architecture. This hybrid approach leverages the distinct advantages of both semiconductor materials: SiC for superior thermal performance and GaN for higher-frequency switching capabilities. The integrated protection features in their GaNSafe technology - including 350ns short-circuit protection and 2kV ESD protection - address critical reliability concerns in high-power applications.
The 97.8% efficiency achievement is particularly notable, as it represents a 30% reduction in power losses compared to conventional designs. For hyperscale operators, this translates to significant operational cost savings through reduced energy consumption and cooling requirements. The IntelliWeave digital control platform's hybrid approach optimizes efficiency across varying load conditions - a crucial feature for data centers with fluctuating workloads.
The PSU's compliance with Open Compute Project guidelines ensures interoperability within the standardized infrastructure used by major cloud providers, making adoption more straightforward. From a technical standpoint, the integration of multiple protection mechanisms (over-current, over-voltage, under-voltage, and over-temperature) while maintaining the compact form factor of 790 x 73.5 x 40 mm is an impressive engineering achievement.
Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs
TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centers with high-power rack densities of 120 kW.
The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave™’ digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies to ensure the highest efficiency and performance, with the lowest component count.
The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
IntelliWeave digital control provides a hybrid control strategy of both Critical Conduction Mode (CrCM) and Continuous Conduction Mode (CCM), for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a
The 3-phase interleaved full-bridge (FB) LLC topology is enabled by 4th generation high-power GaNSafe ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)typ. from 18 to 70 mΩ.
The PSU is 790 x 73.5 x 40 mm and has an input voltage range of 180 – 305 VAC, outputting up to 50 VDC and delivering 12 kW when using input voltages above 207 VAC and 10 kW below this. Additionally, it implements active current sharing and over-current, over-voltage, under-voltage, and over-temperature protections. It has an operating temperature range of -5 to 45oC, a hold-up time of ≥20 ms at 12 kW, and an inrush current of ≤3 times the steady-state current below 20 ms. Cooling is via the PSU’s internal fan.
“The continuation and leadership of Navitas’ AI power roadmap has seen a quadrupling in output power – from 2.7 to 12 kW – in just over 24 months,” said Gene Sheridan, CEO and co-founder of Navitas. “This increase in power delivery is vital for the world’s data centers to support the exponential power demanded by the latest GPU architectures. The ‘designed for production’ PSU enables our customers to quickly implement a highly efficient, simple, and cost-effective solution to address the power delivery challenges for AI and hyperscale data centers.”
The 12 kW PSU was presented at Navitas’ ‘AI Tech Night’ on 21st May, alongside the Computex exhibition in Taiwan. For more information on this PSU and Navitas’ AI roadmap, please visit here or contact us at info@navitassemi.com
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/a1e99465-49ac-4ed6-b6f7-b615c164a18c
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