Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency

Module options include high-current pins and pre-applied thermal interface material to simplify heatsink assembly.

Rhea-AI Summary

Navitas Semiconductor (NVTS) unveiled a 2300 V silicon carbide power module family for energy infrastructure and grid applications. The G4H08MT23GB4 full-bridge modules use its fourth-generation GeneSiC Trench-Assisted Planar architecture and have 8 mΩ on-resistance. Navitas designed the family to improve efficiency and power density in solid-state transformers, grid-scale battery storage, solar inverters and megawatt EV charging.

Samples are available immediately. The family will undergo Navitas' internal AEC-Plus reliability qualification, which extends beyond AEC-Q101 and JEDEC testing requirements; qualification is not presented as completed.

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Key Figures

Voltage rating: 2300 V On-resistance: 8 mΩ Isolation capability: Over 5 kV +3 more

Voltage rating

2300 V

New full-bridge module family

On-resistance

8 mΩ

Class-leading RDSON for the SiCPAK form factor

Isolation capability

Over 5 kV

Aluminum nitride active-metal-braze substrate

Thermal conductivity

10× improvement

Versus silicone gel

Current-carrying capability

2× per pin

Versus standard press-fit connections

Static high-temperature, high-voltage test duration

More than 3×

AEC-Plus qualification tests

Key Terms

rdson, full-bridge, active-metal-braze, thermal interface material

4 terms

rdson technical

"has a class-leading RDSON (8 mΩ)"

Rds(on) is the electrical resistance of a semiconductor switch called a MOSFET when it is turned on; think of it as how much the switch gets in the way of electric flow. Lower Rds(on) means less energy lost as heat, higher efficiency and cooler operation in power supplies, batteries and motor controllers, so it matters to investors because it influences product performance, manufacturing costs, reliability and competitive advantage.

full-bridge technical

"2300 V full-bridge module family"

An electrical circuit topology made of four switches arranged in a bridge (often called an H-bridge) that can apply a voltage across a load in either direction. By closing opposite pairs of switches the full-bridge drives current one way or the other through a motor or transformer primary, enabling bidirectional control, polarity reversal, or creation of an AC waveform from a DC source. Compared with a half-bridge, a full-bridge can deliver the full supply voltage across the load, but its switches must be timed to prevent shorting the supply (shoot-through) and typically require dead-time and more complex control.

active-metal-braze technical

"aluminum nitride (AlN) active-metal-braze (AMB) substrate"

A joining process that uses a molten filler metal alloy containing one or more 'active' elements (commonly titanium, zirconium or hafnium) to bond metals to ceramics, glass, or oxidized surfaces. During heating in vacuum or an inert atmosphere the active element reacts chemically with the non‑metallic or oxide surfaces to form a thin reaction layer that wets and bonds the parts; the bulk of the joint is formed by the braze alloy solidifying like in conventional brazing. The technique is used when ordinary brazing fillers cannot wet or adhere to ceramics or oxide films, and it requires controlled atmospheres and precise temperature control because the active elements oxidize easily and the reaction layer is thin and critical to joint integrity.

thermal interface material technical

"An optional pre-applied thermal interface material (TIM)"

A thermal interface material is a soft, heat-conducting substance placed between a heat-generating component (like a chip) and a heat sink to help move heat away more efficiently. Think of it as the grease between two metal parts that fills tiny gaps so heat flows smoothly; for investors, choice and quality of these materials affect device performance, reliability, product lifespan, manufacturing cost and supply-chain competitiveness.

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Latest 2300 V, 8 mΩ full-bridge SiCPAK™ G power module leverages proprietary GeneSiC™ Trench-Assisted Planar™ technology to deliver the industry's leading R_DSON, enabling higher and power density for solid-state transformers, grid-scale battery energy storage systems, solar inverters, and megawatt charging infrastructure

TORRANCE, Calif., Oct. 21, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure.

The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has a class-leading R_DSON (8 mΩ).

It has been developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas' fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio.

As grid-tied power architectures increasingly underpin next-generation AI data centers, Navitas' UHV SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas' AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications.

Advanced Construction for High-Reliability, High-Power Operation

The modules also integrate several construction enhancements that better meet the needs of demanding, high-power applications. For example, its aluminum nitride (AlN) active-metal-braze (AMB) substrate enables superior heat spreading and supports an isolation capability of over 5 kV. Its epoxy-resin potting technology reduces internal stress distribution, limits moisture and contaminant ingress, and delivers 10x improvements in thermal conductivity versus silicone gel.

Additionally, the module’s high-current, press-fit pins have twice the current-carrying capability per pin versus standard press-fit connections. An optional pre-applied thermal interface material (TIM), which simplifies and standardizes heatsink assembly, is also available.

Extended Reliability Testing Validates Long-Term System Lifetime

The new module family will be qualified to Navitas' AEC-Plus* reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. The benchmark reflects Navitas' focus on system-level lifetime requirements for the demanding mission profiles found in energy and grid infrastructure applications.

The AEC-Plus qualification includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing to represent stringent fast-switching application mission profiles; it also more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R). Additionally, it implements an extended power-cycling and temperature-cycling testing and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices.

“Our fourth-generation GeneSiC Trench-Assisted Planar architecture continues to push the limits of what's possible in ultra-high voltage SiC,” said Paul Wheeler, VP & GM of Navitas' SiC Business Unit. “This new 2300 V module delivers a leading RDS_(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data center infrastructure.”

Samples of the G4H08MT23GB4(HC) family are available immediately, with options for pre-applied TIM and high-current variants:

Part Number	Configuration	Pre-Applied TIM	Pins
G4H08MT23GB4	Full-Bridge	No	Standard
G4H08MT23GB4-T	Full-Bridge	Yes	Standard
G4H08MT23GB4HC	Full-Bridge	No	High-Current
G4H08MT23GB4HC-T	Full-Bridge	Yes	High-Current

A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request. This has been created to help engineers evaluate the device's switching performance. A white paper on Trench-Assisted Planar Technology is also available for download from the Navitas website.

To request samples, contact a Navitas representative or email info@navitassemi.com.

________________________________

*AEC-Plus is Navitas' internal reliability qualification benchmark that extends beyond standard AEC-Q101 and JEDEC test requirements.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies for AI infrastructure, including data centers and energy and grid systems, as well as additional markets such as high-performance computing and industrial electrification. Collectively, these technologies address the complete grid-to-xPU power architecture, breaking the AI infrastructure power wall and enabling higher efficiency, greater power density, and increased performance across the entire power chain. Navitas’ GaNFast™ FETs deliver industry-leading power density, efficiency, and high-speed performance, while GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection to enable faster, more efficient power conversion, leading to smaller and more reliable systems. The GeneSiC™ portfolio combines proprietary trench-assisted planar (TAP) SiC technology with leading-edge discrete packaging and SiCPAK™ power modules to deliver industry-leading efficiency, ruggedness and performance. Claros™ IVR technologies extend power delivery directly to the xPU, enabling customers to implement vertical power delivery (VPD) and embedded power delivery (EPD) architectures with high-density power conversion beneath or within millimeters of the processor, minimizing power-delivery losses and impedance while enabling ultra-fast transient response, higher efficiency and maximum power density. Navitas has over 450 patents issued or pending and is a leader in 800 VDC and the advanced AI power infrastructure ecosystem.

Navitas^®, GaNFast^®, GeneSiC™, Claros™, SiCPAK^®, GaNSafe^®, DrGaN™, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/2ce3de4e-67cd-43d7-863e-96c8cc93aa3b