Navitas Files Patent Infringement Lawsuit Against Newly Announced Renesas GaN Products

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) has moved its 650 V GaNFast field-effect transistors into commercial deployment, with volume customer shipments. Samples have been delivered and products shipped in volume to multiple customers. The devices use a DFN 8x8 dual-side-cooled package.

Navitas first announced its 800 V-to-6 V power delivery board, featuring these transistors, at NVIDIA GTC in March 2026. The company has more than 450 patents issued or pending across its intellectual property portfolio.

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• Moderate point650 V GaNFast transistors reached commercial deployment, with samples delivered and volume shipments to multiple customers.

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• None.

News Explained

Navitas says it has filed a new U.S. lawsuit against Renesas, alleging six patent-infringement counts tied to its newly announced 650 V SuperGaN FET and 100 V REXGaN family; the new case and the separate August lawsuit both remain pending.

Key Figures

Patent-infringement counts: 6 counts

Patent-infringement counts

6 counts

Four concerning the TP65H020G4PLSGBD and two concerning Renesas’ enhancement-mode GaN transistor family

Key Terms

enhancement mode, dual-side cooled, dc-dc converters

3 terms

enhancement mode technical

"family of 100 V enhancement mode GaN power transistors"

A property of a field-effect transistor (FET) meaning the device is normally off at zero gate-to-source voltage and conducts only when a sufficient gate voltage is applied to create a conductive channel. Enhancement-mode devices require that positive (for n-channel) or negative (for p-channel) gate bias to induce carriers and turn the transistor on, unlike depletion-mode FETs which are normally on and need a gate voltage to turn off.

dual-side cooled technical

"in a dual-side cooled (DSC) PQFN 8x8"

A design in which a component or device is actively cooled on both of its opposite faces or surfaces so heat is removed from each side rather than from only one. In medical and engineering devices this usually means coolant, circulating fluid, or cooling channels are arranged to draw heat away across both sides of a tip, pad, or wall to control temperature, prevent local overheating or tissue charring, and maintain stable performance; it differs from single‑side cooling where only one surface is cooled and heat must dissipate through the material to the cooled side. Dual‑side cooling requires additional plumbing, seals or channels and can increase device complexity and size compared with single‑side designs.

dc-dc converters technical

"targeting 800 V data center DC-DC converters"

DC-DC converters are electronic components that change one direct-current voltage level to another (for example, converting a battery’s voltage to the lower voltages used by chips). Think of them like a power adapter or gearbox for electricity: they make the right amount of power available efficiently and safely. Investors care because their efficiency, size, cost, and reliability affect product performance, battery life, manufacturing costs, and supply-chain demand, all of which can influence a company’s margins and growth prospects.

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Navitas Takes Swift Legal Action Following Renesas’ Announcement of New REXGaN and 650 V SuperGaN Products

TORRANCE, Calif., Nov. 12, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced that it has filed a lawsuit in the United States District Court for the Eastern District of Texas charging Renesas Electronics Corporation with six counts of patent infringement.

Navitas previously filed a separate lawsuit on August 10, 2026 against Renesas alleging that their major GaN product lines, including SuperGaN power semiconductors, infringe patents within Navitas’ industry-leading GaN patent portfolio.

The ongoing litigation has not deterred Renesas from its further and continued alleged infringement of Navitas’ patent rights. On September 30, 2026, despite ongoing litigation concerning its other SuperGaN products, Renesas announced its newest 650 V SuperGaN GaN FET, TP65H020G4PLSGBD.

Renesas further expanded its GaN portfolio on October 6, 2026, with the introduction of its REXGaN family of 100 V enhancement mode GaN power transistors, including RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC.

“Navitas is an early GaN innovator, and we pioneered bringing GaN technology to scale. We’ve heavily invested in R&D, respect valid intellectual property rights, and we expect our competitors to do likewise,” said Navitas Senior Vice President and CTO Siddarth Sundaresan. “Competitors flagrantly disregarding our intellectual property rights will not go unanswered.”

The lawsuit accuses the TP65H020G4PLSGBD of four counts of patent infringement for each of U.S. Patent Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996 and Renesas’ enhancement mode GaN power transistor family of two counts of patent infringement for each of U.S. Patent Nos. 9,613,891 and 10,269,687.

TP65H020G4PLSGBD, which is a 650 V, 20mOhm (typical), in a dual-side cooled (DSC) PQFN 8x8, targeting 800 V data center DC-DC converters, follows almost 7 months after Navitas first announced its 800 V-to-6 V power delivery board at NVIDIA GTC in March 2026, featuring 650 V GaNFast™ FETs in the DFN 8×8 dual-side-cooled (DSC) package.

Navitas’ 650 V GaNFast FETs in DFN 8x8 DSC has progressed to commercial deployment, with samples delivered and products shipped in volume to multiple customers, demonstrating Navitas’ ability to bring next-generation GaN power solutions from development to commercialization.

Navitas built its business through independent research, engineering excellence and investment, developing industry-leading technologies backed by a robust global intellectual property portfolio of more than 450 patents issued or pending.

Since its founding in 2014, Navitas has been a pioneer in wide bandgap technologies driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification.

Both patent infringement lawsuits against Renesas Electronics Corporation remain pending.

About Navitas Semiconductor

Navitas Semiconductor (Nasdaq: NVTS) is a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies for AI infrastructure, including data centers and energy and grid systems, as well as additional markets such as high-performance computing and industrial electrification. Collectively, these technologies address the complete grid-to-xPU power architecture, breaking the AI infrastructure power wall and enabling higher efficiency, greater power density, and increased performance across the entire power chain. Navitas’ GaNFast™ FETs deliver industry-leading power density, efficiency, and high-speed performance, while GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection to enable faster, more efficient power conversion, leading to smaller and more reliable systems. The GeneSiC™ portfolio combines proprietary trench-assisted planar (TAP) SiC technology with leading-edge discrete packaging and SiCPAK™ power modules to deliver industry-leading efficiency, ruggedness and performance. Claros™ IVR technologies extend power delivery directly to the xPU, enabling customers to implement vertical power delivery (VPD) and embedded power delivery (EPD) architectures with high-density power conversion beneath or within millimeters of the processor, minimizing power-delivery losses and impedance while enabling ultra-fast transient response, higher efficiency and maximum power density. Navitas has over 450 patents issued or pending and is a leader in 800 VDC and the advanced AI power infrastructure ecosystem.

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

Navitas, GaNFast, GeneSiC, Claros, SiCPAK, GaNSafe, DrGaN, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Navitas Media Contact:
Navitas Semiconductor
Linda Williams
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

FAQ

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Have Navitas NVTS 650 V GaNFast transistors reached commercial deployment?

Navitas’ 650 V GaNFast transistors in the DFN 8x8 dual-side-cooled package have reached commercial deployment. Samples have been delivered and products shipped in volume to multiple customers.