Navitas Collaborates with NVIDIA on 800 V-to-12 V Power Delivery Board for Next-Generation AI Infrastructure
Navitas Semiconductor (NVTS) announced a 24 kW power delivery board developed with NVIDIA to support the NVIDIA MGX ecosystem.
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Rhea-AI Summary
Navitas Semiconductor (NVTS) announced a 24 kW power delivery board developed with NVIDIA to support the NVIDIA MGX ecosystem.
The board converts 800 VDC directly to 12 VDC in one stage, eliminating the intermediate 50 V-to-12 V conversion stage. It has a target efficiency of 97% at full load and power density exceeding 2,000 W/in³. Navitas says the design reduces power losses and board space. The board extends a portfolio that includes a previously announced 20 kW, 800 V-to-6 V board developed with NVIDIA. It is planned for display at NVIDIA’s AI Factory MGX Wall partner area at OCP Global Summit 2026.
Details
Market Reaction – NVTS
On Oct 12, the day this news came out, the latest delayed price for NVTS is 6.21% above the previous close. Argus tracked a peak move of +7.3% during the session. Argus tracked a trough of -4.3% from its starting point during tracking. Our momentum scanner has recorded 77 alerts for this stock so far that day. The latest delayed price is $10.61. Relative volume is above average at 1.5x the average.
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Key Figures
- Board power capacity
- 24 kW
- New 800 V-to-12 V power delivery board
- Target efficiency
- 97%
- At full load
- Power density
- Exceeding 2,000 W/in³
- New power delivery board
- Direct conversion
- 800 VDC to 12 VDC
- Single-stage architecture
- Eliminated conversion stage
- 50 V-to-12 V
- Existing IBC stage omitted by the single-stage architecture
- Board form factor
- 400 mm × 60 mm
- Designed for integration onto the compute motherboard
Previous Partnership,AI Reports
-
Earlier NVIDIA MGX collaboration showcased an 800 V-to-6 V PDB with 97.5% target efficiency.
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Key Terms
dc-dc technical
half-bridge topology technical
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Next-generation 24 kW power delivery board converts 800 VDC directly to 12 VDC in a single stage, eliminating the 50 V IBC power stage, boosting system efficiency and reducing board space. The solution will be showcased in the NVIDIA AI Factory MGX Ecosystem partner display area at OCP
TORRANCE, Calif., Oct. 12, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced its latest 24 kW, 800 V-to-12 V DC-DC power delivery board (PDB), powered by GaNFast™ technology and developed in collaboration with NVIDIA, to support the NVIDIA MGX ecosystem and advance 800 VDC power architectures for AI data centers. The new PDB is planned to be featured on NVIDIA’s AI Factory MGX Wall partner display area at OCP Global Summit 2026.
This latest 24 kW, 800 V-to-12 V PDB extends Navitas’ portfolio of 800 VDC AI data-center platforms, building on the previously announced 20 kW, 800 V-to-6 V PDB developed in collaboration with NVIDIA. These solutions advance the core strategic focus of the Navitas 2.0 transformation to accelerate the replacement of legacy silicon with next-generation GaN and SiC high-power technologies across AI infrastructure, from Grid-to-xPU.
The PDB is capable of delivering 24 kW with a target efficiency of
The single-stage architecture converts 800 VDC directly to 12 VDC, eliminating the existing 50 V-to-12 V IBC conversion stage and delivering 12 V directly to the voltage regulator module (VRM) that powers the xPU. This simplified power architecture improves system efficiency and reliability while reducing power losses, board space and overall power-delivery complexity.
The power architecture incorporates 16 × NV6034 (650 V, 18 mΩ) GaNFast™ FETs on the primary side, configured in a stacked half-bridge topology and featuring Navitas’ latest dual-cooled DFN 8 × 8 package.
“The next era of AI will be defined not only by how much compute we can create but by our ability to deliver the power needed to unleash its full potential,” said Chris Allexandre, President and CEO of Navitas. “Our collaboration with NVIDIA is breaking the AI infrastructure power wall by reimagining power delivery from 800 VDC to the GPU. This next-generation 24 kW solution demonstrates how GaNFast™ technology can eliminate power-conversion stages, increase efficiency and power density, and bring power closer to the GPU.”
Navitas’ portfolio of 800 VDC AI data-center platforms provides customers with greater flexibility to select the optimal intermediate-bus voltage and VRM architecture for their point-of-load power requirements.
The 800 V-to-12 V PDB is planned to be showcased at the NVIDIA AI Factory MGX Wall partner display area at OCP Global Summit 2026. For more information, please contact your Navitas representative or email info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies for AI infrastructure, including data centers and energy and grid systems, as well as additional markets such as high-performance computing and industrial electrification. Collectively, these technologies address the complete grid-to-xPU power architecture, breaking the AI infrastructure power wall and enabling higher efficiency, greater power density, and increased performance across the entire power chain. Navitas’ GaNFast™ FETs deliver industry-leading power density, efficiency, and high-speed performance, while GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection to enable faster, more efficient power conversion, leading to smaller and more reliable systems. The GeneSiC™ portfolio combines proprietary trench-assisted planar (TAP) SiC technology with leading-edge discrete packaging and SiCPAK™ power modules to deliver industry-leading efficiency, ruggedness and performance. Claros™ IVR technologies extend power delivery directly to the xPU, enabling customers to implement vertical power delivery (VPD) and embedded power delivery (EPD) architectures with high-density power conversion beneath or within millimeters of the processor, minimizing power-delivery losses and impedance while enabling ultra-fast transient response, higher efficiency and maximum power density. Navitas has over 450 patents issued or pending and is a leader in 800 VDC and the advanced AI power infrastructure ecosystem.
Navitas®, GaNFast®, GeneSiC™, Claros™, SiCPAK®, GaNSafe®, DrGaN™, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com
Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/add83c1f-3ef4-4e7e-b06a-5c20838cf2c2
