Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026
Rhea-AI Summary
Navitas (Nasdaq: NVTS) will exhibit at APEC 2026 in San Antonio, March 22–26 (booth #2027), showcasing GaN and SiC power solutions for AI data centers, HPC, grid and industrial electrification.
Highlights include a 10 kW 800V→50V GaN DC-DC brick at 98.5% peak efficiency, 2.1 kW/in³ density, 12 kW, 8.5 kW and 4.5 kW supplies, UHV SiCPAK modules (3300V/2300V/1200V), and compact 240W/300W GaN solutions.
Positive
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Negative
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Key Figures
Market Reality Check
Peers on Argus
NVTS was up 19.61% with strong volume, while key peers like HIMX, LASR, MXL, AOSL, and CEVA showed smaller positive moves of 0.46–3.95%, suggesting a company-specific AI and power-infrastructure catalyst rather than a broad sector rotation.
Previous AI Reports
| Date | Event | Sentiment | Move | Catalyst |
|---|---|---|---|---|
| Feb 09 | AI DC-DC platform | Positive | +4.1% | Launch of 10 kW all-GaN 800 VDC DC-DC platform with 98.5% efficiency. |
| Nov 20 | AI fab partnership | Positive | -2.2% | Long-term GaN partnership with GlobalFoundries for AI datacenter applications. |
| Oct 13 | NVIDIA AI support | Positive | +26.1% | New GaN and SiC devices to support NVIDIA’s 800 VDC AI factory architecture. |
| May 21 | 12 kW AI PSU | Positive | -4.5% | Launch of 12 kW PSU for hyperscale AI data centers at 97.8% efficiency. |
| May 15 | AI tech event | Positive | -1.0% | “AI Tech Night” showcasing next-gen OCP PSU and GaNSafe, GeneSiC advances. |
AI-related announcements often move the stock, but reactions have been mixed, with both strong gains and selloffs following similar AI power-platform news.
Over the past year, Navitas has repeatedly highlighted AI data center and high-power platform advances, including partnerships, next-gen PSUs, and support for leading AI architectures. Prior AI-tagged events like the 10 kW DC-DC platform launch and NVIDIA AI factory support focused on efficiency and higher power density. Price reactions have ranged from a 26.08% gain to mid-single-digit declines, showing that even clearly positive technical progress has not produced uniformly positive trading responses.
Historical Comparison
AI-tagged news for Navitas has historically produced an average move of 4.5%, with both strong rallies and selloffs following similar high-efficiency AI power launches.
AI-tagged events show a progression from early PSUs and AI-focused power designs toward higher power levels, better efficiency, and ecosystem partnerships for hyperscale AI data centers.
Market Pulse Summary
This announcement reinforces Navitas’ focus on high-efficiency power solutions for AI data centers and energy infrastructure, extending its roadmap with a 10 kW 800 V–to–50 V DC-DC brick at 98.5% peak efficiency, 2.1 kW/in³ density, and new ultra-high-voltage SiCPAK modules. In context with earlier AI-tagged launches and partnerships, investors may track how quickly these platforms translate into revenue growth versus recent financial and regulatory disclosures.
Key Terms
dc-dc technical
solid-state transformer technical
gate driver technical
power modules technical
medium-voltage grids technical
power density technical
bidirectional technical
evaluation board technical
AI-generated analysis. Not financial advice.
- Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.
- Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs.
TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will exhibit its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification at APEC 2026 (booth #2027) in San Antonio, Texas from March 22-26.
At the event, Navitas will unveil the 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform that employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver
For next-generation solid-state transformer (SST) applications demanding industry-leading efficiency—exceeding
Advancing the future of AI-enabled high-performance computing, Navitas will debut ultra-compact 240W and 300W power solutions built on its latest GaNFast™ IC innovations for superior efficiency and power density. Navitas will also showcase high-efficiency GaN-based motor control solutions ranging from 400W to 1kW for advanced industrial applications.
Navitas Speaking Sessions at APEC 2026
March 24 | 8:55–9:20 AM CT | Location: IS01.2
Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications
Presenter: Sumit Jadav, Navitas Semiconductor
March 25 | 11:05–11:30 AM CT| Location: IS07.6
High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
March 26 | 11:35–11:50 AM CT | Location: IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit
Visit us at our booth #2027. For further information on the Navitas APEC 2026 presence, please visit our event page.
To schedule a meeting with Navitas at APEC 2026, please contact your Navitas representative or write to info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com
Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com
Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/f951a301-6e16-42e2-a877-20fa00052d52