Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026

Rhea-AI Summary

Navitas (Nasdaq: NVTS) unveiled an 800 V–6 V DC-DC power delivery board using GaNFast technology, enabling direct single-stage conversion from 800 V to 6 V. The PDB targets 96.5% peak efficiency at 1 MHz and 2,100 W/in³ power density, removing the 48 V IBC stage and improving rack power density for AI servers.

The design is ultra-low profile (≈20% thinner than a mobile phone), uses 16×650 V GaNFast FETs, and is showcased at NVIDIA GTC 2026 and APEC 2026.

Positive

• Peak efficiency of 96.5% at full load
• Power density of 2,100 W/in³
• Eliminates the 48 V IBC conversion stage
• 1 MHz switching enables smaller passives
• Ultra-low profile ≈ 20% thinner than a phone

Negative

• Depends on broader 800 V data center infrastructure adoption
• Legacy 54 V architectures remain incompatible without redesign

News Market Reaction – NVTS

-6.39%

32 alerts

-6.39% News Effect

+10.0% Peak Tracked

-7.3% Trough Tracked

-$183M Valuation Impact

$2.67B Market Cap

0.7x Rel. Volume

On the day this news was published, NVTS declined 6.39%, reflecting a notable negative market reaction. Argus tracked a peak move of +10.0% during that session. Argus tracked a trough of -7.3% from its starting point during tracking. Our momentum scanner triggered 32 alerts that day, indicating elevated trading interest and price volatility. This price movement removed approximately $183M from the company's valuation, bringing the market cap to $2.67B at that time.

Data tracked by StockTitan Argus on the day of publication.

Key Figures

Input-output range: 800 V–6 V Peak efficiency: 96.5% Switching frequency: 1 MHz +5 more

8 metrics

Input-output range 800 V–6 V Direct DC-DC conversion in new power delivery board

Peak efficiency 96.5% Target efficiency at full load for 800 V–6 V DC-DC PDB

Switching frequency 1 MHz Switching frequency enabling smaller passives and high density

Power density 2,100 W/in³ Power density enabled by new 800 V–6 V board

Board thickness 20% thinner PDB thickness compared to a mobile phone

Primary GaNFast FETs 16 × 650 V Number and rating of GaNFast FETs on primary side

Output MOSFET rating 25 V Voltage rating of silicon MOSFETs on center-tapped outputs

Event dates March 16–19, 22–26 NVIDIA GTC 2026 and APEC 2026 exhibition windows

Market Reality Check

Price: $8.75 Vol: Volume 44,627,425 is 2.22...

high vol

$8.75 Last Close

Volume Volume 44,627,425 is 2.22x the 20-day average of 20,108,314, indicating elevated interest ahead of this AI data center hardware debut. high

Technical Shares at $10.49 are trading above the 200-day MA of $8.28 and sit 41.03% below the $17.79 52-week high.

Peers on Argus

NVTS gained 7.08% while close peers were mixed: LASR rose 5.83%, but HIMX fell 7...

1 Up

NVTS gained 7.08% while close peers were mixed: LASR rose 5.83%, but HIMX fell 7.63% and others (MXL, AOSL, CEVA) were roughly flat to down. Only one peer (LAES) appeared in the momentum scanner, reinforcing that this move looks stock-specific rather than a broad semiconductor trade.

Common Catalyst Both Navitas and peer MaxLinear had AI data center–focused product headlines today, pointing to ongoing interest in AI infrastructure hardware even as price reactions diverge across names.

Historical Context

5 past events · Latest: Mar 11 (Positive)

Pattern 5 events

Date	Event	Sentiment	Move	Catalyst
Mar 11	CFO appointment	Positive	-7.9%	New experienced CFO named to support Navitas 2.0 financial strategy.
Mar 11	SiC package launch	Positive	+24.9%	Launch of new 1200 V GeneSiC 5th-gen SiC MOSFET packages with performance gains.
Mar 4	AI SST demo	Positive	+3.6%	250 kW solid-state transformer demo for 3.3 kV AC to 800 V DC conversion.
Feb 26	APEC showcase	Positive	-3.7%	Plans to exhibit GaN and SiC power solutions for AI data centers at APEC.
Feb 25	Investor conference	Positive	+19.6%	Presentation at Morgan Stanley TMT conference with CEO fireside chat.

Pattern Detected

Recent product and AI data center announcements have often led to strong upside, while some event and leadership headlines have seen negative or mixed reactions.

Recent Company History

Over the last few weeks, Navitas reported several technology and corporate updates. A new CFO announcement on Mar 11 was followed by a -7.93% move, while a GeneSiC SiC package launch the same day saw a strong +24.88% reaction. AI data center–oriented demos and exhibits on Mar 4 and Feb 26 produced modest moves of +3.6% and -3.74%. A conference appearance on Feb 25 coincided with a +19.61% gain. Today’s NVIDIA GTC-focused board debut extends this AI and high-power data center narrative.

Market Pulse Summary

The stock moved -6.4% in the session following this news. A negative reaction despite today’s techni...

Analysis

The stock moved -6.4% in the session following this news. A negative reaction despite today’s technical milestone would fit a pattern where some seemingly constructive events led to downside, such as the CFO appointment that coincided with a -7.93% move. While the 800 V–6 V board offers up to 96.5% efficiency and 2,100 W/in³ density, prior trading shows that not every product or event update has translated into sustained strength, leaving room for reassessment after initial headlines.

Key Terms

dc-dc, intermediate bus converter, voltage regulator modules, gallium nitride, +4 more

8 terms

dc-dc technical

"announced its latest DC-DC power delivery board (PDB) powered by GaNFast"

A dc-dc is an electronic power converter that changes one direct-current voltage level to another, like a small transformer for batteries or electronic circuits. Investors care because these components determine how efficiently devices use power, affect product size and battery life, and can influence manufacturing costs and reliability—traits that impact a maker’s competitiveness and profit margins much like a car’s fuel efficiency affects its appeal and running costs.

intermediate bus converter technical

"eliminates the traditional 48 V intermediate bus converter (IBC) stage"

An intermediate bus converter is an electrical device that transforms a main power source into a stable, lower-voltage direct-current ‘bus’ that many subsystems draw from. Investors should care because consolidating power conversion into a single efficient, reliable bus can cut component count, improve overall system efficiency, lower manufacturing costs and reduce downtime risk—similar to a central power strip that supplies and protects multiple appliances in a building.

voltage regulator modules technical

"to deliver to Voltage Regulator Modules (VRM), which typically operated at 12 V"

Voltage regulator modules are compact electronic components that deliver steady, precise electrical power to chips and circuit boards, preventing voltage swings that can damage sensitive parts. For investors, they matter because the quality, efficiency and availability of these modules directly affect product reliability, energy consumption, manufacturing costs and time-to-market—think of a VRM as the faucet or traffic cop that keeps a device’s power flow steady and predictable.

gallium nitride technical

"leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide"

Gallium nitride is a durable semiconductor material used to make electronic components that switch faster, handle higher voltages, and waste less energy than older silicon parts. Think of it as a lighter, more efficient motor in an appliance: it lets devices shrink, run cooler and save power, which can lower manufacturing costs, enable new products and boost sales or margins for companies that adopt it—key factors investors watch.

silicon carbide technical

"GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power"

Silicon carbide is a hard, durable material made from silicon and carbon, often used in industrial applications like cutting tools and electronics. Its ability to withstand high temperatures and conduct electricity efficiently makes it valuable in manufacturing advanced electronic devices. For investors, companies working with silicon carbide are seen as key players in the growing market for high-performance electronics and energy-efficient technologies.

mosfets technical

"Center-tapped outputs use 25 V silicon MOSFETs."

A MOSFET is a tiny electronic switch used inside chips and power circuits to control the flow of electricity, functioning much like a faucet that opens and closes to let current move when needed. Investors care because MOSFETs directly affect how fast, efficient and small electronic devices and power systems can be, so supply, performance improvements or cost changes in MOSFETs can impact manufacturers’ margins, product competitiveness and capital spending.

planar magnetics technical

"1 MHz switching enables the use of the smallest passives and planar magnetics"

Planar magnetics are flat, compact electrical components—like transformers and coils—made by layering metal traces on circuit boards or thin sheets instead of traditional wound wire. They matter to investors because they can reduce size, weight, heat and manufacturing cost while improving reliability in power-hungry devices; that can translate into lower production costs, better product performance and stronger profit or market-position prospects for companies using them.

power density technical

"1 MHz switching frequency, enabling a power density of 2,100 W/in³."

Power density measures how much energy a device or system can produce or transfer in a given amount of space or volume, often expressed as power per unit area or volume. It helps investors understand how efficiently a technology can deliver energy or performance relative to its size, which can influence decisions about its practicality and potential for scaling up. High power density typically indicates a compact, powerful solution, while lower values suggest larger, less intense options.

AI-generated analysis. Not financial advice.

The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, cost, and compute density. The platform is being showcased at NVIDIA GTC 2026.

TORRANCE, Calif., March 16, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced its latest DC-DC power delivery board (PDB) powered by GaNFast™ technology, enabling direct conversion from 800 V to 6 V in one power stage. This breakthrough solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability, and valuable real estate, to deliver a simple power delivery solution to support advanced NVIDIA AI infrastructure.

Traditional enterprise and cloud architectures built around legacy 54 V in-rack power distribution are increasingly unable to support the megawatt rack densities demanded by future accelerated computing platforms. Addressing these escalating power requirements requires a fundamental shift in data center power architecture.

NVIDIA is leading the transition to 800 VDC data center power infrastructure, and Navitas is delivering the right technologies to support this shift. Navitas’s 800 V–50 V DC-DC platform introduction was a breakthrough in efficiency and power density; however, 800 V to 50 V conversion still required one more power conversion stage to deliver to Voltage Regulator Modules (VRM), which typically operated at 12 V or below.

As NVIDIA MGX architecture evolves with the future rack design for high compute and power density systems for greater AI performance, they will require direct 800 V-to-6 V (or 12 V) conversion to maximize rack power density and overall efficiency. Converting directly from 800 V eliminates the 50 V IBC stage, reducing conversion losses, freeing valuable board space, and improving end-to-end system efficiency. Navitas’s 6 V output architecture improves system performance versus other already released PDBs by cutting the VRM conversion ratio in half.

Navitas’s 800 V–6 V DC-DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency.

Next-gen 800 V–6 V DC-DC PDB eliminates the 48 V IBC stage, increasing system efficiency, reliability, and saving valuable PCB area.

The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of the smallest passives and planar magnetics, delivering maximum power density.

“With our industry-leading 800 V-to-6 V DC-DC PDB, Navitas is setting a new benchmark for data center power architectures. By eliminating an entire conversion stage, we lower system cost and power losses while freeing up valuable board space, enabling customers to dedicate more real estate to compute, memory, and GPUs and to unlock maximum performance for AI workloads,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Our latest GaNFast™ based solution shows how Navitas is pushing the boundaries of AI data center power.”

The PDB is being showcased at NVIDIA GTC 2026, March 16-19, San Jose, and also at the Navitas booth (#2027) at APEC, March 22–26, in San Antonio, TX.

To find out more information about this solution, please reach out to your Navitas representative or write to info@navitassemi.com.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect,” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas, and forward-looking statements are subject to a number of uncertainties. Our business is subject to certain risks that could materially and adversely affect our business, financial condition, results of operations, or the value of our securities. . For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements. Examples of some of these risk factors include:

• Risks Related to High-Power Markets: We intend to focus on AI data centers, performance computing, energy and grid infrastructure, and industrial electrification, and de-emphasize mobile and consumer products. We may not successfully execute our strategic transition to these new markets and customer applications, which could adversely affect our business, results of operations, and financial condition. This strategic realignment entails significant operational, technical, and market risks. Our success in these markets depends on factors including our ability to (i) develop and scale semiconductor solutions that meet demanding power, efficiency, and performance requirements of our customers; (ii) compete against established incumbents with substantial R&D and manufacturing resources; (iii) anticipate rapidly evolving customer needs and technological standards in these high-power and high-performance segments; and (iv) secure design wins and long-term supply agreements in new and unfamiliar market segments.
• Market Acceptance and Addressable Market Uncertainty: The demand for our products, and our customers’ products, in new or emerging markets is difficult to forecast, as customer preferences may not be fully known and can evolve rapidly. Further, demand for our products depends on the acceptance of underlying new and developing system architectures. For example, our predictions for the use of GaN- and SiC-based products in 800V AI data center power applications depend on assumptions regarding the acceptance and growth of 800V systems themselves.
• Unpredictable Competitive Dynamics and Industry Conditions: To the extent our products reshape or create new market landscapes, the competitive environment may evolve in unexpected ways. For example, new competitors may emerge, or traditional competitors with established R&D and manufacturing resources, and long-standing customer relationships, may choose to offer competitive GaN or high-voltage SiC solutions. In addition, the semiconductor sector is known for cyclical volatility. This inherent unpredictability is amplified in new and emerging markets, where demand can swing sharply due to macroeconomic events, supply chain shocks, regulatory changes, or technology cycles.
• Other Risk Factors: Other risk factors include Navitas’ ability to diversify its customer base and develop relationships in new markets or regions; the possibility that the expected growth of our business will not be realized, or will not be realized within expected time periods, due to the above factors as well as others; Navitas’ ability to scale its technology into new markets and applications; the effects of competition on Navitas’ business, including actions of competitors with an established presence and resources in markets we hope to penetrate or by competitors to take market share in the markets we are deprioritizing; the level of demand in our customers’ end markets and our customers’ ability to predict such demand, both generally and with respect to successive generations of products or technology; Navitas’ ability to attract, train and retain key qualified personnel; changes in government trade policies, including the imposition of tariffs and the regulation of cross-border investments, particularly involving the United States and China; other regulatory developments in the United States, China and other countries; the impact of events such as epidemics and pandemics in locations where our products are manufactured and sold; and Navitas’ ability to protect its intellectual property rights.

Photos accompanying this announcement are available at

https://www.globenewswire.com/NewsRoom/AttachmentNg/4d63d622-de0d-4b92-b1ea-6385f088eff3

https://www.globenewswire.com/NewsRoom/AttachmentNg/b8caf0f9-ec7d-4344-b7e8-e618c0714e99

FAQ

What did Navitas (NVTS) announce at NVIDIA GTC 2026?

Navitas announced an 800 V–6 V DC-DC power delivery board for AI data centers. According to Navitas, the GaNFast-based PDB enables single-stage conversion, removes the 48 V IBC, and is showcased at NVIDIA GTC 2026 and APEC 2026.

What efficiency and power density does Navitas claim for the NVTS 800 V–6 V PDB?

Navitas claims a 96.5% peak efficiency and 2,100 W/in³ power density for the PDB. According to Navitas, 1 MHz switching and GaNFast FETs enable these metrics while shrinking passive and magnetic component size.

How does the NVTS 800 V–6 V board affect server power architecture and rack density?

The board removes an intermediate conversion stage to improve rack density and efficiency. According to Navitas, eliminating the 48 V IBC frees PCB area and reduces conversion losses, allowing more real estate for compute, memory, and GPUs.

What technology does Navitas use in the NVTS PDB and what are the key components?

The PDB uses GaNFast technology with 16×650 V GaNFast FETs and 25 V silicon MOSFET outputs. According to Navitas, the design uses a stacked full-bridge primary and center-tapped outputs to reach 6 V efficiently.

What investor considerations follow Navitas's NVTS product announcement?

The product indicates tech leadership but requires 800 V infrastructure adoption for scale. According to Navitas, the solution targets next-gen AI racks, so investor impact depends on data center migration to 800 V power systems.