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Navitas Semiconductor (Nasdaq: NVTS) will participate in CES 2024, showcasing their next-generation GaN and SiC technology. The company was recently awarded Forbes’ Top 50 America’s Most Successful Small Companies. Navitas’ GaNFast™ power ICs integrate GaN power, sensing, control, and advanced safety features in a single device. They will highlight new system platform designs for EV, solar, data center, mobile, and motor drive, featuring new product technology platforms including GaNSafe, GeneSiC Gen-3 Fast, and Gen-4 GaNFast Half-Bridge. The technology aims to improve the performance, efficiency, and adoption of mobile fast charging, EVs, solar, energy storage, home appliance/industrial, and AI data center power. Navitas invites visitors to discover how GaN and SiC technology can lead to increased portability, longer range, faster charging, and grid-independence, while also focusing on reducing carbon footprint by saving over 6 Gtons/yr CO2 by 2050.
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Navitas Semiconductor (Nasdaq: NVTS) collaborates with NIO, a leading new-energy vehicle maker, to release the NIO Phone featuring GaNFast™ technology for fast charging. The smartphone boasts a 66 W GaNFast charger, Qualcomm Snapdragon 8 Gen 2 chip, 6.81-inch 2K variable refresh-rate curved screen, and seamless integration with smart EVs through NIO Link panoramic-interconnection technology.
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Navitas Semiconductor (NVTS) secured the 49th position on Forbes' 2024 America's Successful Small Companies list, based on strong demand for their advanced GaN and SiC power components. The company saw a 115% increase in revenue from Q3’22 to Q3’23. Navitas will host an in-person 2023 Investor Day to discuss new technology platforms, focus markets, customer testimonials, and financial outlook.
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Navitas Semiconductor (Nasdaq: NVTS) is a leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors. The company announced its participation in and sponsorship of the ‘Bodo's WBG Event’ in Munich, Germany, showcasing its latest technologies including Gen-4 GaNSense™ half-bridges and Gen-3 Fast GeneSiC MOSFETs. Navitas is a pure-play wide bandgap (WBG) semiconductor supplier, having shipped 100 million GaN and 12 million SiC power devices.
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Navitas Semiconductor (Nasdaq: NVTS) announced its participation in the Power Semiconductor User Forum, where Alfred Hesener, Senior Director of Industrial and Consumer Applications, will explore 'Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies.' The event offers insights into power electronics for developers and technical buyers. Navitas' GaNFast power ICs integrate GaN power and drive with control, sensing, and protection to enable faster charging, higher power density, greater energy savings, and system cost reduction. New 'Gen-3 Fast' GeneSiC MOSFETs have up to 50% improved performance vs. other SiC devices and save over 40 kg CO2 per unit vs. legacy silicon IGBTs. The forum highlights leading-edge, reliable technology for drives, pumps, chargers, and power conversion, using GaN and SiC.
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2.28%
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Navitas Semiconductor (Ticker: NVTS) announces participation in investor conferences after reporting a 115% year-over-year revenue growth and 22% sequential growth. The CEO expects revenues to exceed market growth rates in 2024 and beyond, driven by new technology platforms in gallium nitride and silicon carbide. The company will be present at the Roth 12th Annual New York Technology Conference, Craig-Hallum 14th Annual Alpha Select Conference, and Wells Fargo 7th Annual TMT Summit, with live webcasts available on their website.
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Navitas Semiconductor Corporation (NVTS) reports a 115% year-over-year revenue growth, launching four new technology platforms. GaN and SiC technologies are rapidly replacing legacy silicon power chips. The company expects revenues to surpass market growth rates in 2024. Total revenue reached $22.0 million in Q3 2023, a 22% increase sequentially with a GAAP gross margin of 32.3%. Non-GAAP gross margin was 42.1%. Loss from operations was $28.6 million on a GAAP basis and $8.7 million on a non-GAAP basis. Cash and cash equivalents were $176.7 million as of September 30, 2023.
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Navitas Semiconductor (Nasdaq: NVTS) has been ranked 72nd on this year’s North American Deloitte Technology Fast 500™, marking the company's second consecutive ranking. The improved position is attributed to increased revenue driven by strong demand for its advanced, high-efficiency, wide bandgap (WBG) gallium nitride (GaN) and silicon carbide (SiC) power components. Navitas achieved 2,129% growth from 2019 to 2022, displacing legacy silicon chips and enabling efficient, sustainable applications in markets such as EV, solar, appliance, industrial, and mobile.
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Navitas Semiconductor announces another GaNFast win at Samsung, providing a new 25W charger for the flagship Galaxy S23 smartphone. The charger, model EP-T2510, uses GaNFast technology and reaches 50% charge in only 30 minutes. Navitas' GaNFast technology is fully qualified to Samsung's stringent requirements.
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Navitas Semiconductor (Nasdaq: NVTS) will report Q3 2023 financial results on November 9th, 2023. A conference call and webcast will be held at 2:00 p.m. Pacific / 5:00 p.m. Eastern to present the results and answer questions.
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Navitas Semiconductor Corporation
Nasdaq:NVTS
NVTS Rankings
NVTS Stock Data
686.63M
131.40M
27.76%
46.6%
12.15%
Semiconductor and Related Device Manufacturing
Manufacturing
United States of America
TORRANCE
About NVTS
navitas semiconductor enables new classes of high frequency, high efficiency & high density power electronics by introducing the world’s first and fastest allgan™ power ics. headquartered in el segundo, california, usa with a highly successful and proven team of power semiconductor professionals, navitas has over 150 years of combined experience and more than 100 patents to date, and is dedicated to delivering significant end-customer value. navitas gan patents in core device, circuit, packaging and system technology complement extensive trade secrets, access to over $100m of r&d equipment, and ongoing r&d collaboration with the hughes research lab (hrl) for future power gan generations.