Navitas Semiconductor Corp Stock Price, News & Analysis

Navitas Semiconductor (NVTS) has announced its schedule to report Q4 and full year 2024 financial results on Monday, February 24th, 2025, after market close. The company will host a conference call and webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern on the same day, where management will present financial results and answer analyst questions.

Following the earnings call, Navitas will participate in three major investor events: the Susquehanna 14th Annual Technology Conference (February 28th, virtual), the Morgan Stanley Technology, Media & Telecom Conference (March 3rd, San Francisco), and the 37th Annual Roth Conference (March 17th, Dana Point). CFO Todd Glickman will attend all events, while CEO Gene Sheridan will join for the Morgan Stanley conference, which includes a fire-side chat at 2:35pm Pacific.

Navitas Semiconductor (NVTS) announced the integration of its GaNFast and GeneSiC power technologies into Dell's family of notebook adapters, ranging from 60W to 360W. The technology enables 3x more power and 3x faster charging in half the size and weight compared to traditional silicon power devices.

The implementation supports Dell's new AI notebooks featuring Neural Processor Units (NPUs). The adapters demonstrate significant environmental benefits, requiring up to 50% less plastic and utilizing post-recycled materials. Each GaNFast power IC saves 4 kg CO2, while each SiC MOSFET saves 25 kg CO2 compared to legacy silicon chips.

The collaboration between Dell and Navitas, which began in 2020, focuses on improving charging speed, efficiency, size, weight, and environmental impact.

Navitas Semiconductor (Nasdaq: NVTS), a leading power semiconductor company specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in an upcoming CICC investor call. The event is scheduled for Wednesday, December 11th at 6pm US Pacific time (9pm US Eastern, December 12th at 10am Beijing/Shanghai/Hong Kong time).

The group call will feature presentations from Gene Sheridan (CEO), Todd Glickman (CFO), and Charles Zha (VP, GM Navitas China). Interested participants can register by contacting Carla Lai at the CICC Research Department.

Navitas Semiconductor (NVTS) will showcase breakthrough technologies at CES 2025 in Las Vegas, focusing on AI data centers, EVs, and mobile applications. The company will present several innovations including the world's only 650V bi-directional GaNFast power ICs, an 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply at 137 W/in3.

Key highlights include automotive-qualified Gen-3 Fast SiC MOSFETs, GaNSlim integrated solutions for mobile devices, and SiCPAK high-power modules for EV charging. The company's technologies aim to advance the transition from legacy silicon to next-generation GaN and SiC power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.

Navitas Semiconductor (NVTS) has appointed Dr. Ranbir Singh to its board of directors. Dr. Singh, formerly Executive Vice President at Navitas and founder/CEO of GeneSiC Semiconductor, brings over 20 years of Silicon Carbide (SiC) innovation experience, including 8 years at Wolfspeed. As a recognized leader in power electronics, he holds numerous accolades, including over 200 published papers and 40 US patents.

Dr. Singh joined Navitas through the GeneSiC acquisition, which he founded in 2004. He holds degrees from the Indian Institute of Technology and North Carolina State University, where he was inducted into the ECE Alumni Hall of Fame in 2022. His appointment strengthens Navitas' position in next-generation power semiconductors, particularly in GaN power ICs and SiC technology.

Navitas Semiconductor (NVTS), a leader in next-generation power semiconductors specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announces participation in two upcoming investor events. The company will join the MESH Ventures Investor Call on December 2nd, 2024, featuring CEO Gene Sheridan and CFO Todd Glickman. Additionally, Navitas will attend the Needham 27th Annual Growth Conference on January 14-15th, 2025, in New York, which includes one-on-one meetings and a fireside chat hosted by Senior Analyst Quinn Bolton.

Navitas Semiconductor (NVTS) has been recognized in Deloitte's Technology Fast 500™ for the third consecutive year, achieving 571% revenue growth from 2020 to 2023. The growth was driven by strong demand for their advanced gallium nitride (GaN) and silicon carbide (SiC) power components across multiple markets. The company is expanding its presence in mobile fast chargers, AI data centers, and EV markets, with new product introductions including GaNSafe™, Gen-3 'Fast' SiC, and a 48V-focused range in partnership with Infineon. These innovations target applications from 20W to 20MW, addressing a market opportunity exceeding $22B annually.

Navitas Semiconductor (Nasdaq: NVTS), a leading company in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in the 13th Annual Roth Technology Conference. The event will take place on November 19th & 20th, 2025, at the Hard Rock Hotel in New York. Todd Glickman, CFO, and Stephen Oliver, VP Investor Relations, will be available for one-on-one meetings with investors. Interested parties can arrange meetings through Roth Capital Partners.

Navitas Semiconductor (NVTS) has unveiled the world's first 8.5 kW power supply unit (PSU) for AI and hyperscale data centers, achieving 98% efficiency through combined GaN and SiC technologies. The PSU features high-power GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved PFC and topologies, reducing component count by 25% compared to competitors. The unit operates at 180-264 Vac input, provides 54V output, and maintains a temperature range of -5°C to 45°C. The innovative design addresses power demands for next-generation AI servers, particularly those running NVIDIA's Blackwell GPUs, as currently 95% of data centers lack adequate power support.