Navitas’ Latest SiCPAK™ Power Modules Set a New Standard for Unparalleled Reliability & Efficient High-Temperature Performance
Rhea-AI Summary
Navitas Semiconductor (NVTS) has unveiled its latest SiCPAK™ power modules featuring advanced epoxy-resin potting technology and proprietary trench-assisted planar SiC MOSFET technology. The new 1200V modules demonstrate 5x lower thermal resistance increase after thermal shock testing compared to conventional silicone-gel-filled modules.
Key features include:
- Enhanced reliability in high-humidity environments
- Up to 20% lower losses and cooler operation
- Superior isolation test performance compared to silicone-gel modules
- Available in ratings from 4.6 mΩ to 18.5 mΩ
The modules target multiple applications including EV DC fast chargers, industrial motor drives, power supplies, solar inverters, energy storage systems, industrial welding, and induction heating. The products are immediately available for mass production with optional pre-applied Thermal Interface Material.
Positive
- 5x better thermal resistance stability compared to conventional modules
- Up to 20% lower power losses in high-temperature operations
- Superior isolation test performance while conventional modules failed
- Immediate availability for mass production
Negative
- None.
News Market Reaction 1 Alert
On the day this news was published, NVTS gained 5.20%, reflecting a notable positive market reaction.
Data tracked by StockTitan Argus on the day of publication.
Advanced low-cost epoxy-resin potting technology enables 5x lower thermal resistance shift for extended system lifetime
TORRANCE, Calif., April 17, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announces the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Modules are released and immediately available for mass production. Datasheets can be found here or by visiting www.navitassemi.com. For more information, please contact info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/6e63ec79-7ffa-44ed-b53f-3b9af2e5c138