Navitas Showcases Advances in GaN and SiC Technologies, Including World’s First Production Released 650V Bi-Directional GaNFast™ ICs at PCIM 2025
Navitas Semiconductor (NVTS) will showcase several breakthrough technologies in GaN and SiC power semiconductors at PCIM 2025. The company announced the world's first production-released 650V bi-directional GaNFast ICs with IsoFast drivers, enabling single-stage topologies for EV charging and solar applications.
Key innovations include automotive-qualified GaNSafe ICs, advanced SiCPAK power modules with 5x lower thermal resistance, and new GaNSense Motor Drive ICs. The company also introduced GaNSlim™ for integrated power solutions and demonstrated the world's first 8.5kW AI data center power supply achieving 98% efficiency, along with a 4.5kW power supply featuring 137 W/in³ density.
Navitas Semiconductor (NVTS) presenterà diverse tecnologie rivoluzionarie nei semiconduttori di potenza GaN e SiC al PCIM 2025. L'azienda ha annunciato i primi IC GaNFast bidirezionali da 650V prodotti in serie con driver IsoFast, che permettono topologie a singolo stadio per applicazioni di ricarica EV e solari.
Le innovazioni principali includono IC GaNSafe qualificati per uso automotive, moduli di potenza SiCPAK avanzati con una resistenza termica 5 volte inferiore e nuovi IC GaNSense per motori. L'azienda ha inoltre presentato GaNSlim™ per soluzioni di potenza integrate e ha dimostrato il primo alimentatore per data center AI al mondo da 8,5 kW con un'efficienza del 98%, insieme a un alimentatore da 4,5 kW con una densità di potenza di 137 W/in³.
Navitas Semiconductor (NVTS) presentará varias tecnologías innovadoras en semiconductores de potencia GaN y SiC en PCIM 2025. La compañía anunció los primeros ICs GaNFast bidireccionales de 650V en producción con controladores IsoFast, que permiten topologías de etapa única para aplicaciones de carga de vehículos eléctricos y energía solar.
Las innovaciones clave incluyen ICs GaNSafe calificados para automoción, módulos de potencia SiCPAK avanzados con una resistencia térmica 5 veces menor y nuevos ICs GaNSense para control de motores. La empresa también presentó GaNSlim™ para soluciones de potencia integradas y demostró la primera fuente de alimentación para centros de datos AI de 8,5 kW en el mundo con un 98% de eficiencia, junto con una fuente de 4,5 kW con una densidad de potencia de 137 W/in³.
Navitas Semiconductor (NVTS)는 PCIM 2025에서 GaN 및 SiC 전력 반도체 분야의 여러 획기적인 기술을 선보일 예정입니다. 이 회사는 IsoFast 드라이버가 탑재된 세계 최초의 650V 양방향 GaNFast IC를 양산한다고 발표했으며, 이를 통해 전기차 충전 및 태양광 응용 분야에서 단일 스테이지 토폴로지를 구현할 수 있습니다.
주요 혁신 기술로는 자동차용 인증 GaNSafe IC, 5배 낮은 열 저항을 가진 첨단 SiCPAK 전력 모듈, 그리고 새로운 GaNSense 모터 드라이브 IC가 포함됩니다. 또한 통합 전력 솔루션을 위한 GaNSlim™을 소개했고, 98% 효율을 달성한 세계 최초의 8.5kW AI 데이터 센터 전원 공급 장치와 137 W/in³ 밀도의 4.5kW 전원 공급 장치도 시연했습니다.
Navitas Semiconductor (NVTS) présentera plusieurs technologies révolutionnaires dans les semi-conducteurs de puissance GaN et SiC lors du PCIM 2025. L’entreprise a annoncé les premiers circuits intégrés GaNFast bidirectionnels 650V en production avec des drivers IsoFast, permettant des topologies à étage unique pour les applications de recharge de véhicules électriques et solaires.
Les innovations clés comprennent des CI GaNSafe qualifiés automobile, des modules de puissance SiCPAK avancés avec une résistance thermique cinq fois plus faible, et de nouveaux CI GaNSense pour la commande de moteurs. La société a également présenté GaNSlim™ pour des solutions de puissance intégrées et a démontré la première alimentation 8,5 kW pour centre de données IA au monde atteignant 98 % d’efficacité, ainsi qu’une alimentation 4,5 kW avec une densité de puissance de 137 W/in³.
Navitas Semiconductor (NVTS) wird auf der PCIM 2025 mehrere bahnbrechende Technologien im Bereich GaN- und SiC-Leistungshalbleiter vorstellen. Das Unternehmen kündigte die weltweit ersten 650V bidirektionalen GaNFast-ICs in Serienproduktion mit IsoFast-Treibern an, die einstufige Topologien für EV-Ladung und Solaranwendungen ermöglichen.
Zu den wichtigsten Innovationen gehören automotive-zertifizierte GaNSafe-ICs, fortschrittliche SiCPAK-Leistungsmodul mit 5-fach geringerer thermischer Widerstand und neue GaNSense-Motorsteuerungs-ICs. Zudem stellte das Unternehmen GaNSlim™ für integrierte Leistungslösungen vor und demonstrierte das weltweit erste 8,5 kW AI-Rechenzentrumsnetzteil mit 98 % Effizienz sowie ein 4,5 kW Netzteil mit 137 W/in³ Leistungsdichte.
- First-to-market with 650V bi-directional GaNFast ICs, expanding market opportunities
- Achievement of 98% efficiency in 8.5kW AI data center power supply
- Industry-leading power density of 137 W/in³ in 4.5kW AI power supply
- 5x improvement in thermal resistance for SiCPAK modules
- Successful automotive qualification (AEC-Q100 and Q101) for GaNSafe ICs
- None.
Insights
Navitas unveils significant breakthroughs in GaN and SiC technologies addressing high-growth AI, EV, and renewable energy markets.
Navitas Semiconductor is making substantial technological advances across both their gallium nitride (GaN) and silicon carbide (SiC) portfolios, positioning themselves at the forefront of next-generation power semiconductors. The introduction of the world's first production-released 650V bi-directional GaNFast ICs represents a genuine technological milestone, enabling the simplified single-stage topologies that could transform power conversion in multiple high-growth markets.
Their automotive qualification achievements for GaNSafe ICs (meeting both Q100 and Q101 standards) strategically addresses the rapidly expanding EV market, particularly for on-board chargers and DC-DC converters. The comprehensive reliability report citing 7+ years of production data helps address historical concerns about GaN technology reliability for automotive applications.
What's particularly noteworthy are their AI data center solutions - the 8.5kW OCP power solution achieving
The company's dual-technology strategy leverages GaN for lower-voltage applications while their Gen-3 "Fast" SiC MOSFETs target higher-power applications. Their GaNSlim product line further expands their addressable market into consumer electronics applications up to 500W.
This comprehensive portfolio spans critical growth markets in electrification - from AI data centers and EVs to renewable energy integration and motor drives - demonstrating Navitas' continued innovation across next-generation power semiconductor technologies.
Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense Motor Drive ICs, and high-reliability SiCPAK modules
TORRANCE, Calif., April 22, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, will be exhibiting several GaN and SiC breakthroughs in AI data centers, EVs, motor drives, and industrial applications at PCIM 2025 (6th – 8th May, 2025).
PCIM is the leading exhibition for power electronics, intelligent motion, renewable energy, and energy management. Visitors are invited to visit the “Planet Navitas” booth (Hall 9, Booth #544) to learn about Navitas’ mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors.
Major technology and system breakthroughs include:
- The world’s first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate-drivers. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Targeted applications range widely across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage, and motor drives. The recorded launch event video can be viewed here.
- Automotive-qualification high-power GaNSafe™ ICs, which have been qualified to both Q100 and Q101, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. A comprehensive reliability report has been created that analyzes over 7 years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
- The latest release of the SiCPAK power modules, which utilize advanced epoxy-resin potting technology and GeneSiC™ trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime. Rigorously designed and validated for the most demanding high-power environments, they prioritize reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
- Newly released GaNSense™ Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving
98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count. - World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over
97% efficiency. - ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of
99.3% and reduce power losses by30% compared to existing solutions.
- Newly released GaNSense™ Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
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About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/2fbe3bfb-11ee-4a05-897e-d23ddfc0168d
FAQ
What are the key features of Navitas' new 650V bi-directional GaNFast ICs?
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What improvements does Navitas' new SiCPAK power module offer?
