Navitas Semiconductor Corporation develops next-generation power semiconductors built around gallium nitride and silicon carbide technologies. Its GaNFast power ICs integrate GaN power, drive, control, sensing and protection functions, while GeneSiC devices serve high-voltage SiC power applications. Company updates frequently address AI data centers, performance computing, energy and grid infrastructure, industrial electrification, e-mobility, telecommunications and fast-charging markets.
Recurring Navitas news covers financial results, the company’s shift toward high-power markets, product platforms such as DC-DC power delivery boards, technology licensing and supply-chain partnerships, and governance changes including finance leadership and board appointments.
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Navitas Semiconductor (Nasdaq: NVTS) has announced a global agreement with Mouser Electronics to distribute its GaN and SiC power ICs. This partnership aims to meet the rising demand in the $22 billion market for efficient, integrated wide band-gap (WBG) semiconductors. The GaNFast™ power ICs will provide faster charging and energy savings, while GeneSiC devices are tailored for high-power applications. According to David Carroll, Senior VP Worldwide Sales at Navitas, the collaboration enhances accessibility to their advanced technologies for electronic designers. Mouser, a prominent distributor, anticipates improved customer service and logistics for these innovative power devices. With over 75 million GaN units shipped and a 20-year warranty, Navitas continues to establish itself as a leader in the semiconductor industry.
Navitas Semiconductor (Nasdaq: NVTS) showcased its advanced gallium nitride (GaN) and silicon carbide (SiC) power products at the PCIM 2023 conference in Nuremberg, Germany, from May 9-11, 2023. The event, a key platform for power electronics, attracted over 400 technical presentations. Navitas highlighted products designed for the EV, solar, energy storage, home appliance, and industrial markets, emphasizing their reliability and efficiency. Key technologies include GaNFast™ power ICs and GeneSiC™ devices, promising significant reductions in CO2 emissions by 2050. The company is committed to its mission, 'Electrify our World™,' providing insights through demonstrations and panel sessions.
Navitas Semiconductor (Nasdaq: NVTS) has achieved a significant milestone with its GaNFast™ technology, enabling the world’s first 240 W ultra-fast charger for the realme GT3 smartphone. This charger can fully charge the device’s 4600 mAh battery in just 9.5 minutes, with a 50% charge possible in 4 minutes. The ultra-compact design of the charger, weighing only 173 g, delivers a power density of 2.42 W/cc. The GaNFast ICs also utilize GaNSense™ technology for real-time power monitoring and efficiency. Realme's GT3, launched during Mobile World Conference 2023, incorporates this cutting-edge charging solution, marking a significant advancement in fast-charging technology.
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Navitas Semiconductor (Nasdaq: NVTS) has launched a new family of GaNSense Control ICs, showcasing advanced performance and integration of gallium nitride (GaN) and low-voltage silicon technology. These innovations allow for charging systems that operate up to 20x faster while reducing size and energy consumption. The initial product range supports various applications including smartphone and laptop chargers, with over one million units shipped. The integration of high-speed controller technology is set to unlock an additional $1B/year market opportunity, enhancing Navitas' influence in sectors like renewable energy, EVs, and data centers.