Welcome to our dedicated page for Navitas Semiconductor news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor stock.
Navitas Semiconductor Corporation (Nasdaq: NVTS) is a power semiconductor company focused on gallium nitride (GaN) power ICs and high-voltage silicon carbide (SiC) devices for high-power markets such as AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. The company’s news flow reflects both its technology roadmap and its strategic transition toward these segments, which it refers to as “Navitas 2.0.”
On this page, readers can follow NVTS news related to product announcements, strategic partnerships, capital raises, and investor events. Recent press releases have highlighted ultra-high-voltage GeneSiC™ SiC MOSFET portfolios at 2300V and 3300V, packaging developments such as SiCPAK™ G+ power modules, and the introduction of the company’s AEC‑Plus reliability benchmark for SiC devices. Other updates describe collaborations with partners including GlobalFoundries on U.S.-based GaN technology and manufacturing, GigaDevice on a digital power joint lab, and distribution agreements with Avnet and WT Microelectronics.
Investors and industry observers can also track corporate developments such as private placements of common stock, at-the-market offering activity, leadership changes, and participation in technology and investor conferences. Earnings-related releases, including quarterly financial results and associated outlook commentary, provide additional context on how Navitas is reallocating resources toward high-power applications and adjusting its distribution network.
By reviewing the Navitas news feed, users can see how the company positions its GaNFast™ and GeneSiC™ platforms in emerging high-power markets, how it engages with ecosystem partners, and how its strategic focus evolves over time. This page offers a centralized view of NVTS announcements for those following developments in wide bandgap power semiconductors and related infrastructure markets.
Navitas Semiconductor announces that its next-gen GaNFast power IC is used in the 120W ultra-fast charger for vivo's flagship iQOO 9 Pro smartphone. The charger can fully charge the phone's 4,700 mAh battery in just 19 minutes, while its compact design is 26% smaller than previous models, achieving 1.3 W/cc power density. This GaN technology offers 3x faster charging with up to 40% energy savings while reducing CO2 footprints by 30% compared to silicon chargers. The partnership highlights Navitas' leadership in GaN technology, enhancing consumer charging experiences.
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Navitas Semiconductor has introduced its GaNFast™ gallium nitride (GaN) ICs, powering OPPO's 50W ultra-thin 'League of Legends' fast charger. This innovative charger is notable for its lightweight design and a unique lanyard charging cable. Utilizing two 2MHz-rated NV6115 GaNFast ICs, it achieves high efficiency with a form factor of 82 x 39 x 10.5 mm, making it the world's thinnest and lightest of its kind. The collaboration reflects the ongoing advancements in GaN technology, offering consumers a faster charging experience while integrating gaming aesthetics.
Navitas Semiconductor (Nasdaq: NVTS) announced the opening of a new electric vehicle (EV) Design Center in Shanghai, China, aimed at enhancing its position in the gallium nitride (GaN) power IC market. This facility will support EV customers globally, improving charging speeds up to 3x compared to silicon solutions, and potentially reducing EV battery costs by 5%. The new GaN technology is projected to cut road-sector CO2 emissions by 20% per year by 2050. Navitas aims to capitalize on a $250 potential content per EV, further tapping into higher-power applications like data centers and solar energy.
Navitas Semiconductor (Nasdaq: NVTS) announced CEO Gene Sheridan's participation in the 24th Needham Growth Conference on December 23, 2021. The conference will showcase opportunities in GaN power ICs, which run 20x faster than silicon and reduce energy use by up to 40%. Navitas aims to address a $13 billion market while potentially reducing 2.6 Gton CO2. The company holds over 130 patents and has shipped more than 30 million GaNFast power ICs with no reported failures, establishing its leadership in the GaN semiconductor sector.
Navitas Semiconductor (Nasdaq: NVTS) has upgraded its GaNFast power ICs with GaNSense technology to enhance efficiency and power density for fast-charger markets. The voltage rating has increased from 650V to 700V, enabling better designs for unreliable power grids. GaN technology delivers up to 20x faster performance and 40% energy savings compared to silicon. With over 30 million GaNFast power ICs shipped and zero reported field failures, Navitas aims to lead in the mobile fast-charger sector, promoting innovation for customers worldwide.
Navitas Semiconductor (Nasdaq: NVTS) has announced that its GaNFast power ICs have been chosen by Dell for fast charging their Latitude 9000-series laptops. GaN technology provides significant advantages, including up to 20x faster operation than silicon, 3x more power, and 40% energy savings. The new 60W GaNFast charger is 50% smaller and 25% lighter than previous models, reducing CO2 emissions by 30%. Navitas holds over 130 patents and has shipped more than 30 million GaNFast power ICs with no reported failures.
Navitas Semiconductor (Nasdaq: NVTS) has announced the availability of high-power GaN power IC samples for data centers, solar, and electric vehicle (EV) applications. This marks a significant expansion from their initial market focus on mobile devices. The GaN technology promises up to 20x faster performance, 40% energy savings, and enhanced charging capabilities. With over 30 million units shipped and no field failures reported, the technology aims to replace silicon in high-power applications, potentially reducing CO2 emissions significantly by 2050.
Navitas Semiconductor (Nasdaq: NVTS) announced plans at CES 2022 to expand its leadership in gallium nitride (GaN) power ICs beyond mobile applications into sectors like solar, data centers, and electric vehicles (EVs). GaN technology offers significant advantages, including faster operation and reduced size. With GaNFast chargers used in numerous flagship devices, the company anticipates faster EV adoption, potentially saving up to 20% in CO2 emissions by 2050. Attendees at CES can engage with GaN technology and enter for a chance to win a Tesla Model 3.
Navitas Semiconductor (Nasdaq: NVTS) announced the launch of a new Design Center in Hangzhou, China, aimed at enhancing GaN power integrated circuits for data centers. This facility will facilitate the transition from silicon to GaN, promising energy savings of up to 40% and $1.9B/year in reduced electricity costs. The center's team will support power supply design from concept to mass production, emphasizing high efficiency and cost-reduction, in compliance with stringent efficiency standards effective from January 1, 2023.