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Renesas Electronics has completed its acquisition of Transphorm, a leader in gallium nitride (GaN) power semiconductors, as of June 20, 2024. This acquisition allows Renesas to immediately offer GaN-based power products and reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products. GaN and silicon carbide (SiC) are key for next-gen power semiconductors, with growing applications in EVs, data centers, AI, renewable energy, and more.
Renesas also launched 15 new reference designs, integrating both companies' technologies, focusing on EVs, industrial power conversion, and other sectors. These include solutions like a 500W onboard battery charger for 2-wheeler EVs and a 3-in-1 EV unit combining inverter, charger, and DC/DC converter.
The acquisition aligns with Renesas' strategy for sustainable long-term growth, complementing other initiatives like opening new facilities for power products and securing SiC wafer supplies.
Transphorm (Nasdaq: TGAN), a leader in GaN power semiconductors, has introduced a 300 W DC-to-DC GaN reference design for electric vehicle battery chargers. The design features TP65H150G4PS 150 mOhm SuperGaN® FETs, showcasing bidirectional power capabilities for e-mobility applications. This allows power to flow both from AC to DC and DC to AC, enhancing energy efficiency. The design supports V2X infrastructure, including V2L, V2H, and V2G, with a market size projected to reach up to $70 billion by 2030. Specifications include a peak efficiency of 97.3% and natural convection cooling. The reference design is suitable for high power density applications, such as DC-to-DC power stages in energy harvesting and vehicle battery chargers.
Transphorm (Nasdaq: TGAN) will showcase its SuperGaN platform at PCIM 2024, emphasizing its superior performance over Silicon Carbide (SiC) in high-power systems. The SuperGaN platform delivers lower losses and higher electron mobility, making it ideal for electric vehicles, datacenters, AI, and industrial applications. Transphorm's GaN products support a wide power range, from 45W adapters to 7.5kW PSUs, and are used in groundbreaking customer products. The company estimates a GaN total addressable market of $8 billion by 2028. Notable innovations include a 5-microsecond short-circuit withstand time, a bidirectional switch, and a 1200V GaN-on-Sapphire device. Transphorm's vertical integration and reliability make it a leader in the GaN power semiconductor industry.
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