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Vishay Intertechnology 80 V MOSFET in PowerPAK® 8x8SW Package Offers Best in Class RDS(ON) of 0.88 mΩ to Increase Efficiency

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Vishay Intertechnology (NYSE: VSH) has introduced a new 80 V TrenchFET® Gen IV n-channel power MOSFET in the PowerPAK® 8x8SW bond wireless package. The SiEH4800EW offers industry-leading performance with 0.88 mΩ typical on-resistance at 10 V, representing a 15% improvement over competing devices. The MOSFET features a compact 8mm x 8mm footprint, 50% smaller than TO-263 package alternatives, while maintaining a low 1mm profile. Key features include a low maximum RthJC of 0.36 °C/W (18% reduction), high-temperature operation up to 175 °C, and enhanced solderability with wettable flanks. The device is designed for industrial applications including motor drive controls, power tools, welding equipment, and battery management systems. Samples and production quantities are currently available with 13-week lead times.
Vishay Intertechnology (NYSE: VSH) ha presentato un nuovo MOSFET di potenza n-channel TrenchFET® Gen IV da 80 V nel package wireless PowerPAK® 8x8SW. Il SiEH4800EW offre prestazioni di riferimento nel settore con una resistenza tipica di conduzione di 0,88 mΩ a 10 V, migliorando del 15% rispetto ai dispositivi concorrenti. Il MOSFET presenta un ingombro compatto di 8 mm x 8 mm, il 50% più piccolo rispetto ai package TO-263, mantenendo un profilo basso di 1 mm. Tra le caratteristiche principali figurano una bassa resistenza termica massima RthJC di 0,36 °C/W (riduzione del 18%), funzionamento ad alta temperatura fino a 175 °C e una migliore saldabilità grazie ai lati bagnabili. Il dispositivo è progettato per applicazioni industriali come il controllo motori, utensili elettrici, apparecchiature di saldatura e sistemi di gestione delle batterie. Sono disponibili campioni e quantità per la produzione con tempi di consegna di 13 settimane.
Vishay Intertechnology (NYSE: VSH) ha presentado un nuevo MOSFET de potencia n-channel TrenchFET® Gen IV de 80 V en el paquete inalámbrico PowerPAK® 8x8SW. El SiEH4800EW ofrece un rendimiento líder en la industria con una resistencia típica a la conducción de 0,88 mΩ a 10 V, lo que representa una mejora del 15 % respecto a dispositivos competidores. El MOSFET cuenta con un tamaño compacto de 8 mm x 8 mm, un 50 % más pequeño que los paquetes TO-263, manteniendo un perfil bajo de 1 mm. Las características clave incluyen una baja resistencia térmica máxima RthJC de 0,36 °C/W (reducción del 18 %), operación a alta temperatura hasta 175 °C y mejor soldabilidad con flancos mojables. El dispositivo está diseñado para aplicaciones industriales como controles de motores, herramientas eléctricas, equipos de soldadura y sistemas de gestión de baterías. Se encuentran disponibles muestras y cantidades para producción con plazos de entrega de 13 semanas.
Vishay Intertechnology(NYSE: VSH)는 PowerPAK® 8x8SW 무선 패키지에 새로운 80V TrenchFET® Gen IV n-채널 전력 MOSFET을 출시했습니다. SiEH4800EW는 10V에서 0.88 mΩ의 전형적인 온저항을 제공하며, 이는 경쟁 제품 대비 15% 향상된 성능입니다. 이 MOSFET은 8mm x 8mm의 컴팩트한 크기로 TO-263 패키지 대비 50% 작으며, 1mm의 낮은 프로파일을 유지합니다. 주요 특징으로는 최대 RthJC 0.36 °C/W(18% 감소)의 낮은 열저항, 175 °C까지의 고온 동작, 젖은 측면으로 향상된 납땜성이 포함됩니다. 이 장치는 모터 드라이브 제어, 전동 공구, 용접 장비 및 배터리 관리 시스템 등 산업용 애플리케이션을 위해 설계되었습니다. 샘플과 양산 물량이 13주 납기로 제공됩니다.
Vishay Intertechnology (NYSE : VSH) a lancé un nouveau MOSFET de puissance n-channel TrenchFET® Gen IV 80 V dans le boîtier sans fil PowerPAK® 8x8SW. Le SiEH4800EW offre des performances de pointe avec une résistance à l'état passant typique de 0,88 mΩ à 10 V, soit une amélioration de 15 % par rapport aux dispositifs concurrents. Ce MOSFET présente un encombrement compact de 8 mm x 8 mm, soit 50 % plus petit que les alternatives en boîtier TO-263, tout en conservant un profil bas de 1 mm. Ses principales caractéristiques incluent une faible résistance thermique maximale RthJC de 0,36 °C/W (réduction de 18 %), un fonctionnement à haute température jusqu'à 175 °C, et une meilleure soudabilité grâce à des flancs humectables. Ce composant est destiné aux applications industrielles telles que le contrôle de moteurs, les outils électriques, les équipements de soudage et les systèmes de gestion de batteries. Des échantillons et des quantités de production sont disponibles avec un délai de livraison de 13 semaines.
Vishay Intertechnology (NYSE: VSH) hat einen neuen 80 V TrenchFET® Gen IV n-Kanal Power-MOSFET im PowerPAK® 8x8SW Wireless-Gehäuse vorgestellt. Der SiEH4800EW bietet branchenführende Leistung mit einem typischen Einschaltwiderstand von 0,88 mΩ bei 10 V, was eine Verbesserung von 15 % gegenüber konkurrierenden Bauteilen darstellt. Der MOSFET verfügt über eine kompakte Bauform von 8 mm x 8 mm, die 50 % kleiner ist als TO-263-Gehäusealternativen, bei gleichzeitig niedrigem Profil von 1 mm. Zu den Hauptmerkmalen zählen ein niedriger maximaler RthJC von 0,36 °C/W (18 % Reduktion), Betrieb bei hohen Temperaturen bis zu 175 °C sowie verbesserte Lötbarkeit durch benetzbare Seitenflächen. Das Bauteil ist für industrielle Anwendungen wie Motorsteuerungen, Elektrowerkzeuge, Schweißgeräte und Batteriemanagementsysteme ausgelegt. Muster und Produktionsmengen sind derzeit mit einer Lieferzeit von 13 Wochen verfügbar.
Positive
  • Best-in-class on-resistance of 0.88 mΩ, 15% lower than competitors
  • 50% reduction in PCB space compared to TO-263 package
  • 18% lower RthJC at 0.36 °C/W, improving thermal performance
  • 4x larger source PAD solderable area (3.35 mm²) reducing electro-migration risk
Negative
  • None.

Insights

Vishay's new MOSFET offers significant efficiency gains with best-in-class specs that strengthen their industrial power management portfolio.

Vishay's new SiEH4800EW 80V MOSFET represents a meaningful advancement in power semiconductor technology. The 0.88 mΩ on-resistance at 10V is 15% lower than competing devices, directly translating to reduced conduction losses and higher system efficiency in high-current applications.

The thermal performance improvements are equally significant - the 0.36 °C/W junction-to-case thermal resistance (RthJC) is 18% better than competitors, allowing for better heat dissipation in compact designs. This enables higher power handling in the same thermal envelope.

What's technically impressive is how Vishay achieved these gains while reducing the footprint by 50% compared to TO-263 packages. The PowerPAK 8x8SW package with bond wireless design minimizes parasitic inductance - a critical factor for high-frequency switching applications that reduces switching losses and EMI.

The implementation of fused lead technology increasing the source PAD solderable area to 3.35 mm² (four times larger than traditional designs) is particularly innovative. This significantly reduces current density at the PCB connection point, addressing electro-migration concerns in high-current industrial applications like motor drives and welding equipment.

The wettable flanks feature enhances manufacturing reliability through better visual inspection capabilities - an underappreciated but important factor for industrial equipment with long service life requirements. The high temperature operation to +175 °C suggests robust performance in harsh industrial environments.

Compared to their previous PowerPAK 8x8L, this new device offers double the current handling capability (608A vs 302A) in a thinner package (1.0mm vs 1.7mm), showing a significant generational improvement in Vishay's semiconductor process technology.

Space-Saving Device Offers Low Max. RthJC of 0.36 °C/W and Wettable Flanks to Improve Thermal Performance and Solderability in Industrial Applications

MALVERN, Pa., May 21, 2025 (GLOBE NEWSWIRE) --  To provide higher efficiency for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 80 V TrenchFET® Gen IV n-channel power MOSFET in the PowerPAK® 8x8SW bond wireless (BWL) package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiEH4800EW offers 15 % lower on-resistance while reducing RthJC by 18 %.

With on-resistance down to 0.88 mΩ typical at 10 V, the device released today minimizes power losses from conduction to increase efficiency while improving thermal performance with a low maximum RthJC of 0.36 °C/W. With its 8 mm by 8 mm footprint, the space-saving device occupies 50 % less PCB space than MOSFETs in the TO-263 package while offering an ultra low profile of 1 mm.

The SiEH4800EW implements a fused lead to increase the source PAD solderable area to 3.35 mm², which is four times larger than a traditional PIN solder area. This decreases the current density between the MOSFET and PCB, reducing the risk of electro-migration risk and enabling a more robust design. In addition, the device’s wettable flanks enhance solderability while making it easier to visually inspect the reliability of solder joints.

The MOSFET is ideal for synchronous rectification and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. In these applications, the device offers high temperature operation to +175 °C, and its BWL design minimizes parasitic inductance while maximizing current capability.

RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested.

Comparison Table: D²PAK vs PowerPAK 8x8L vs PowerPAK 8x8SW

Part numberSUM60020ESiJH5800ESiEH4800EW
PackageTO-263PowerPAK 8x8LPowerPAK 8x8SW
Dimensions (mm)16 x 108.0 x 8.0 *8.0 x 8.0 *
Height (mm)4.81.71.0 *
VDS (V)808080
VGS (V)± 20± 20± 20
ConfigurationSingleSingleSingle
               VGSth (V)Min.2.02.02.0
RDS(on) (mΩ) @ 10 VGS

Typ.1.750.970.88 *
Max.2.11.351.15 *
ID (A) Max.150302608 *
RthJC (C/W)Max.0.40.450.36 *
Fused lead implementNoNoYes

Best in class (*)

Samples and production quantities of the SiEH4800EW are available now, with lead times of 13 weeks.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech® is a registered trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720326159429

Link to datasheet:
http://www.vishay.com/ppg?61532 (SiEH4800EW)

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com


FAQ

What are the key specifications of Vishay's new SiEH4800EW MOSFET?

The SiEH4800EW is an 80V MOSFET with 0.88 mΩ typical on-resistance at 10V, 8x8mm footprint, 1mm profile, and 0.36 °C/W maximum RthJC. It operates up to 175°C and features wettable flanks for enhanced solderability.

How does VSH's new MOSFET compare to competing devices?

The SiEH4800EW offers 15% lower on-resistance and 18% lower RthJC compared to competing devices, while occupying 50% less PCB space than MOSFETs in the TO-263 package.

What are the main applications for Vishay's SiEH4800EW MOSFET?

The MOSFET is designed for industrial applications including motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers.

When will Vishay's SiEH4800EW MOSFET be available?

Samples and production quantities of the SiEH4800EW are currently available with lead times of 13 weeks.
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