Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation

Key Terms

silicon carbide technical

Silicon carbide is a hard, durable material made from silicon and carbon, often used in industrial applications like cutting tools and electronics. Its ability to withstand high temperatures and conduct electricity efficiently makes it valuable in manufacturing advanced electronic devices. For investors, companies working with silicon carbide are seen as key players in the growing market for high-performance electronics and energy-efficient technologies.

mosfet technical

A MOSFET is a tiny electronic switch used to control the flow of electricity in chips and circuits, functioning like a faucet that turns current on or off and adjusts how much passes through. Investors watch MOSFETs because their performance, cost and availability affect product power efficiency, manufacturing yields and supply chains for industries from consumer electronics to electric vehicles, which in turn can influence companies’ margins and growth prospects.

rds(on) technical

rds(on) is the electrical resistance of a power transistor (usually a MOSFET) when it is switched fully on; think of it as how narrow a pipe the current must flow through. Lower rds(on) means less energy lost as heat, better efficiency, and less cooling or larger batteries required. Investors watch rds(on) because it influences product performance, power consumption, component cost and reliability — all of which can affect margins and competitive position.

specific on-resistance technical

Specific on-resistance is the electrical resistance a power transistor presents when switched on, measured relative to the device’s active area. Think of it like the resistance to flow in a pipe per square inch: lower values mean less energy lost as heat for the same current, so products with lower specific on-resistance run cooler, use less power and can be smaller or cheaper—factors that affect product performance, manufacturing cost and competitiveness for investors.

body diode technical

An internal semiconductor diode that sits inside certain power transistors and lets current flow in one direction when the transistor is reversed, like a built‑in one‑way valve. For investors, it matters because that inherent path can create unwanted heat, energy loss or the need for extra components in power electronics, affecting product efficiency, reliability and manufacturing cost for companies making chips or devices.

reverse recovery charge technical

The reverse recovery charge is the leftover electric charge a power diode or similar semiconductor must remove when it switches from letting current flow one way to blocking it the other way. Think of it like water sloshing back through a valve that must be cleared before the valve fully closes; that extra clearing causes wasted energy, heat and slower switching. Investors care because larger reverse recovery increases power loss, cooling needs and component stress, which can reduce efficiency and raise costs in electronic products.

traction inverters technical

A traction inverter is an electronic device in electric and hybrid vehicles that converts stored battery electricity into the type and timing of power an electric motor needs, and it controls motor speed and braking recovery. For investors, traction inverters matter because their efficiency, cost, reliability and software can directly affect a vehicle’s range, performance and manufacturing margins—similar to how a transmission and engine tune shape a car’s driving feel and fuel economy.

solid-state circuit breakers technical

Solid-state circuit breakers are electronic devices that stop or reroute an electrical fault using semiconductor switches instead of moving parts, acting like an instant, programmable safety valve for electricity. They matter to investors because they can reduce downtime, enable finer control of power flows, and lower maintenance compared with mechanical breakers—features that can improve reliability and efficiency in grids, data centers, electric vehicles and industrial systems.

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•  Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resistance, achieving up to 27% efficiency improvement over currently available competitive 1200 V solutions
• Technology extends Wolfspeed’s commitment to developing SiC power devices that enable truly durable systems
• Built on Wolfspeed’s qualified, ramp-ready and highly automated 200 mm manufacturing platform, providing automotive and industrial customers with a rapid, low-risk path to market

DURHAM, N.C.--(BUSINESS WIRE)-- Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.

“With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we’re introducing Gen 5 that gives engineers the most current possible with a 5x5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Wolfspeed Chief Business Officer. “What excites me most isn't just the pace of our innovation; it's what this technology unlocks for our customers: an accelerated path to smarter, more efficient, compact systems made for real-world conditions.”

Automotive OEMs continue to face pressure to meet electrification targets, while vehicle cost, safety, mileage range, and charging infrastructure availability remain barriers to broader consumer adoption of EVs. Wolfspeed’s Gen 5 technology was designed to holistically address those barriers and sets a new benchmark for specific on-resistance (R_SP) — a core figure of merit for efficiency relative to the MOSFET's active die area. Gen 5 products enable system architects to design more compact traction inverters and improve mileage per charge and right-size costly EV batteries. They also unlock new SiC opportunities by replacing mechanical relays with solid-state circuit breakers and set new efficiency standards for EV charging infrastructure. The benefits extend well beyond automotive, with applications like industrial power supplies equally positioned to take advantage of the Gen 5’s uncompromised switching performance.

Enabling unrivaled amperage per SiC area

Gen 5-based systems can achieve the highest current possible at high temperatures when compared to competitive 5 x 5 mm footprint silicon carbide MOSFETs. Wolfspeed’s continued optimization of R_DS(ON) resolves two compelling design challenges:

• It significantly improves system-level conduction losses via an up to 27% reduction in R_SP over today’s commercially available competitive 1200-V solutions. The 1200 V QEM50120-25D10 achieves a 175℃ chip-level R_SP of 3.4 mΩ-cm², and the 750 V QEM50075-025D10 achieves a 175℃ chip-level R_SP of 2.0 mΩ-cm².
• It reduces the need for system-level design margin with ultra-low +/- 18% R_DS(ON) distribution for both voltage nodes.

Powering designs that will endure

Wolfspeed Gen 5 includes the same body diode introduced with the Gen 4 technology platform but has an improved junction temperature of 200℃ continuous (215℃ limited life) – further demonstrating Wolfspeed’s commitment to helping customers build truly durable systems. The MOSFETs achieve benchmark R_DS(ON) while maintaining excellent switching energy with the soft body diode; overall switching losses are also reduced with further improvement in reverse recovery charge.

Designed on a commercially mature platform

Gen 5 gives customers a direct, low-risk path from design-in to volume production with no impact to automotive ramp readiness, even with surging AI demand. This is the second Wolfspeed MOSFET technology generation to be designed, manufactured, and qualified within Wolfspeed’s ramp-ready 200 mm device fabrication facility in Mohawk Valley, N.Y. New product introductions (NPI), sampling, and customer validation will be completed using 200 mm production material. Furthermore, no new manufacturing toolsets are required for volume production.

“Our planar MOSFET technology still has innovation runway. We established Gen 5 on tools and processes our customers are familiar with to create a low-risk upgrade path for next-generation programs,” said Dr. Adam Barkley, Vice President of Power Device and Package Development. “For customers facing compressed development timelines, that means faster validation, faster qualification, and faster time to market — without sacrificing the performance they know and trust.”

To gain insights into how Wolfspeed achieved the above performance, read Dr. Barkley’s article Engineering for Outcomes: Three Ways Gen 5 Achieves Real-World Performance.

Availability & Resources

Samples for QEM50120-025D10 and QEM50075-025D10 are available for select customers through Wolfspeed’s direct sales representatives. New 750 V to 1200 V products are expected to continue launching throughout 2026 and into early 2027 as market demand and customer requirements become finalized.

Wolfspeed is proud to be demonstrating Gen 5 this week at PCIM Booth 7-435.

About Wolfspeed Inc.

Wolfspeed (NYSE: WOLF) leads the market in the worldwide adoption of silicon carbide technologies that power the world’s most disruptive innovations. As the pioneers of silicon carbide, and creators of the most advanced semiconductor technology on earth, we are committed to powering a better world for everyone. Through silicon carbide material, Power Modules, Discrete Power Devices and Power Die Products targeted for various applications, we will bring you The Power to Make It Real™. Learn more at wolfspeed.com.

Wolfspeed^® is a registered trademark and The Power to Make It Real™ is a trademark of Wolfspeed, Inc.

Forward-Looking Statements

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause Wolfspeed’s actual results to differ materially from those indicated in the forward-looking statements. Forward-looking statements by their nature address matters that are, to different degrees, uncertain, such as statements about Wolfspeed’s strategic plans, priorities, growth opportunities, and ability to achieve profitability. Actual results could differ materially due to factors detailed in Wolfspeed’s filings with the U.S. Securities and Exchange Commission (“SEC”), including its most recent Annual Report on Form 10-K and subsequent SEC filings. These forward-looking statements represent Wolfspeed’s judgment as of the date of this release. Except as required under U.S. federal securities laws, Wolfspeed disclaims any intent or obligation to update any forward-looking statements after the date of this release.

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Source: Wolfspeed