Axcelis Announces Joint Development Program with GE Aerospace For the Development of High Voltage Superjunction Power Devices

Rhea-AI Summary

Axcelis Technologies (Nasdaq: ACLS) has announced a strategic Joint Development Program (JDP) with GE Aerospace to develop production-worthy 6.5 to 10kV superjunction power devices. The collaboration will utilize Axcelis' Purion XEmax™ high energy implanter, which offers the industry's highest beam currents up to 15MeV.

The partnership is part of the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub project led by North Carolina State University. The initiative focuses on developing Silicon Carbide (SiC) wide bandgap semiconductors, which offer superior performance in voltage, operating temperatures, and frequencies compared to traditional Silicon devices. These advanced semiconductors are crucial for aerospace, defense, AI, quantum computing, autonomous vehicles, and power grid applications.

Positive

• Strategic partnership with industry leader GE Aerospace strengthens market position
• Access to GE's world-leading SiC technology IP portfolio
• Expansion into high-growth markets including aerospace, defense, AI, and quantum computing
• Technology leadership with Purion XEmax offering industry's highest beam currents

Negative

• None.

Insights

Semiconductor Manufacturing Expert

Axcelis' partnership with GE Aerospace strengthens its position in high-power semiconductor manufacturing, potentially opening new revenue streams in emerging markets.

This strategic Joint Development Program between Axcelis and GE Aerospace represents a significant technological collaboration in the advanced semiconductor space. Axcelis' Purion XEmax™ high energy implanter—capable of delivering up to 15MeV beam energies—will be central to developing 6.5-10kV superjunction power devices based on Silicon Carbide (SiC) technology.

The market implications are substantial. This partnership positions Axcelis at the forefront of wide bandgap semiconductor manufacturing, a rapidly growing sector driven by demanding applications in aerospace, defense, AI, quantum computing, and electric grid infrastructure. SiC devices deliver superior performance characteristics—higher voltage handling, temperature tolerance, and switching frequencies—compared to traditional silicon, creating substantial value in power-intensive applications.

Technically, this collaboration leverages Axcelis' expertise in ion implantation—a critical process in semiconductor manufacturing where dopant ions are accelerated and embedded into semiconductor materials to modify their electrical properties. The Purion XEmax's ability to optimize implant profiles while reducing application steps offers manufacturing cost advantages, while the 7μm aluminum implanted depth capability enables the development of specialized high-voltage devices required for extreme operating environments.

For Axcelis, this partnership could accelerate adoption of their equipment in the SiC manufacturing ecosystem, potentially expanding their addressable market beyond traditional silicon semiconductor manufacturing. By aligning with GE Aerospace's established SiC intellectual property portfolio built over three decades, Axcelis gains credibility in emerging high-performance computing and transportation electrification markets where SiC adoption is accelerating.

BEVERLY, Mass., Aug. 20, 2025 /PRNewswire/ -- Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced a Joint Development Program (JDP) with GE Aerospace focused on the development of production-worthy 6.5 to 10kV superjunction power devices. Processes will be developed on Axcelis' Purion XEmax^™ high energy implanter, which provides the industry's highest beam currents over the broadest energy range — up to 15MeV.

This JDP supports the 'Advanced High Voltage Silicon Carbide Switches' project led by GE Aerospace as part of the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub, which is headed by North Carolina State University. This project will aim to improve the performance of power switches used in important emerging applications.

Silicon Carbide (SiC) wide bandgap semiconductors deliver higher voltages, operating temperatures and frequencies compared to traditional Silicon (Si) devices. These semiconductor devices are enabling for many applications in the aerospace and defense sector through reduced power consumption and smaller packaging of critical systems. On the commercial side, high voltage wide bandgap semiconductors are expected to play an important role in emerging critical technologies like artificial intelligence, quantum computing, autonomous vehicles and a more resilient power grid.

President and CEO Russell Low commented, "We are proud to collaborate with GE Aerospace in this endeavor, which has the potential to accelerate superjunction technology adoption. Axcelis is committed to providing equipment and process expertise that enables our customers' superjunction device roadmaps."

Axcelis' Purion XEmax provides maximum flexibility in energy ranges to optimize the profile in depth and concentration, enables a more cost-effective approach by reducing the number of application steps, and excels in channeling over 7µm of aluminum implanted depth.

GE Aerospace, through its Research Center in Niskayuna, NY, has built up a world-leading IP portfolio in SiC technologies over more than three decades and sells SiC- based electric power products today through its Electrical Power business to support the avionics and electrical systems aboard commercial aircraft and ground vehicles. More recently, GE Aerospace researchers have been focusing SiC developments to enable future flight operations in more extreme operating environments such as with hypersonic vehicles and space travel, and to support developments with electric propulsion.

Dr. Ljubisa Stevanovic, chief engineer at GE Aerospace Research, stated: "High voltage SiC power devices are an important enabler for a wide array of critical emerging applications and future endeavors, including hypersonic travel, electric propulsion, and space exploration. We are excited to partner with Axcelis on this project, due to their expertise in ion implantation for Silicon Carbide power devices, and their market leading portfolio of Purion high energy ion implanters."

About Axcelis:

Axcelis (Nasdaq: ACLS), headquartered in Beverly, Mass., has been providing innovative, high-productivity solutions for the semiconductor industry for over 45 years. Axcelis is dedicated to developing enabling process applications through the design, manufacture and complete life cycle support of ion implantation systems, one of the most critical and enabling steps in the IC manufacturing process. Learn more about Axcelis at www.axcelis.com.

Safe Harbor Statement
Statements made in this press release that are not of known historical fact are forward-looking statements and are subject to the safe harbor provisions created by the Private Securities Litigation Reform Act of 1995. These statements, which include our plans with respect to a Joint Development Program, are based on management's current expectations and should be viewed with caution. They are subject to various risks and uncertainties that could cause actual results to differ materially from those in the forward-looking statements, including the risks and uncertainties that are described in the documents filed or furnished by us with the Securities and Exchange Commission, including specifically the risk factors described in our annual report on Form 10-K for the fiscal year ended December 31, 2024. The Company undertakes no obligation to update the information or statements made in this press release.

CONTACTS:

Press/Media Relations Contact: 
Maureen Hart
Senior Director, Corporate & Marketing Communications
Telephone: (978) 787-4266
Email: Maureen.Hart@axcelis.com

Axcelis Investor Relations Contact:
David Ryzhik
Senior Vice President, Investor Relations and Corporate Strategy
Telephone: (978) 787-2352
Email: David.Ryzhik@axcelis.com

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SOURCE Axcelis Technologies, Inc.

FAQ

What is the purpose of Axcelis and GE Aerospace's Joint Development Program?

The JDP aims to develop production-worthy 6.5 to 10kV superjunction power devices using Axcelis' Purion XEmax high energy implanter technology.

What are the advantages of Silicon Carbide semiconductors being developed by ACLS and GE?

SiC semiconductors deliver higher voltages, operating temperatures and frequencies compared to traditional Silicon devices, enabling reduced power consumption and smaller packaging for critical systems.

What markets will benefit from Axcelis and GE's semiconductor development?

The technology will benefit aerospace, defense, artificial intelligence, quantum computing, autonomous vehicles, and power grid applications.

What is the role of Axcelis' Purion XEmax in the development program?

The Purion XEmax provides maximum flexibility in energy ranges and enables cost-effective processing by reducing application steps, with beam currents up to 15MeV.

How will this partnership impact Axcelis' market position in semiconductor technology?

The partnership gives Axcelis access to GE's world-leading SiC technology IP portfolio and strengthens its position in high-growth markets like aerospace and defense.