Enphase Energy and Infineon Announce World’s First 900 V GaN Bidirectional Switch Devices for AI Data Center Solid-State Transformers

Enphase Energy (NASDAQ: ENPH) plans to deploy Infineon’s 900 V gallium nitride bidirectional switches in its solid-state transformer power modules.

Rhea-AI Summary

Enphase Energy (NASDAQ: ENPH) plans to deploy Infineon’s 900 V gallium nitride bidirectional switches in its solid-state transformer power modules. Gallium nitride, or GaN, is a semiconductor material used for power conversion; bidirectional switches handle current in both directions.

The devices have been successfully tested and are being integrated into development builds of the IQ Solid-State Transformer, Enphase’s platform for AI data centers. Production qualification is expected to follow. Enphase says the higher-voltage devices allow fewer converters while retaining high-frequency switching and components rated below 1 kV. The companies also expect the devices to benefit commercial solar inverters for 480 V applications in the United States and 400 V applications elsewhere.

Key Figures

GaN switch voltage: 900 V Existing GaN BDS voltage: 650 V Unipolar DC generation: 800 V +1 more

GaN switch voltage

900 V

New bidirectional switch devices for IQ SST development builds

Existing GaN BDS voltage

650 V

Devices Enphase says it has brought into volume production power electronics

Unipolar DC generation

800 V

Article contrasts this with split ±400 V buses

Future DC bus architecture

1,500 VDC

Supported through split ±750 V generation

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1 past event · Latest: Sep 08

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1. Sep 08

   IQ SST development

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   Enphase began building 4 kW IQ SST modules in Texas for AI data-center racks.

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Key Terms

gallium nitride (gan), monolithic bidirectional switch (bds), hemt, unidirectional switch (uds), +2 more

6 terms

gallium nitride (gan) technical

"900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices"

Gallium nitride (GaN) is a durable semiconductor material used to build electronic components that switch power and radio signals faster and with less energy loss than older silicon parts. Think of it as a more efficient, high-performance engine that lets devices be smaller, run cooler, and handle higher voltages; investors watch GaN adoption because it can lower manufacturing and operating costs, enable new products, and shift competitive advantage and profit margins across chipmakers and equipment makers.

monolithic bidirectional switch (bds) technical

"gallium nitride (GaN) monolithic bidirectional switch (BDS) devices"

A monolithic bidirectional switch (BDS) is a single semiconductor device, fabricated on one integrated die, that can electrically connect or disconnect two nodes while permitting current to flow in either direction when closed. It typically implements back‑to‑back MOSFETs or equivalent internal structures to provide low on‑resistance and remove intrinsic diode conduction when off; its practical limits include on‑resistance, voltage and current ratings, and thermal constraints that determine switching losses and safe operating conditions.

hemt technical

"GaN HEMT technology is already operating in Enphase IQ9™ Microinverters"

A HEMT is a type of electronic switch made from layered semiconductor materials that lets electrical signals move much faster and with less loss than ordinary transistors; think of it as a high-speed highway for electrons. It matters to investors because HEMTs enable faster, more efficient wireless, radar, and power electronics products, so companies that design, manufacture, or use them can gain performance advantages, larger markets, and potentially higher profit margins.

unidirectional switch (uds) technical

"higher-voltage unidirectional switch (UDS) devices allow power to be generated"

An unidirectional switch is an electrical switching device or circuit that permits current or signal flow in only one direction when closed and blocks flow in the opposite direction when open or reversed. It can be implemented with components such as diodes, transistor arrangements, or specialized semiconductor switches; unlike a bidirectional switch, it requires correct polarity and may introduce a forward voltage drop or on-resistance that affects the passed signal. The practical consequence is that it prevents reverse conduction but cannot conduct or transfer power/signal equally in both directions without additional circuitry.

silicon carbide (sic) technical

"power conversion typically governed by silicon carbide (SiC)"

Silicon carbide (SiC) is a very durable material made from silicon and carbon, often used in high-performance electronics and industrial tools. It matters because it can handle extreme heat and voltage better than regular materials, making devices more efficient and longer-lasting, especially in electric vehicles and power systems.

electromagnetic interference (emi) technical

"high-frequency switching, low electromagnetic interference (EMI), and fewer points of failure"

Electromagnetic interference (EMI) is unwanted disturbance in electronic devices caused by stray electromagnetic signals from other equipment, power lines, or wireless transmissions that can disrupt performance. Investors care because EMI can lead to product malfunctions, safety issues, regulatory non‑compliance or expensive redesigns and recalls—similar to static that makes a radio or appliance fail and forces a company to spend more or face reputational and legal costs.

AI-generated analysis. How Rhea-AI works. Not financial advice.

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FREMONT, Calif., Oct. 26, 2026 (GLOBE NEWSWIRE) -- Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that Enphase will deploy the world’s first 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices, designed to operate in Enphase solid-state transformer power modules. The devices extend GaN technology to 900 V while retaining the high-frequency switching capabilities that enable compact, efficient power conversion.

Enphase has pioneered the system-level development and demonstration, building on more than 10 years of in-house research into GaN power conversion, with device technology and engineering expertise from Infineon. Enphase is among the first to bring 650 V GaN BDS devices into volume production power electronics, and GaN HEMT technology is already operating in Enphase IQ9™ Microinverters deployed in the field. Extending that work with Infineon beyond 650 V, using Infineon's CoolGaN™ bidirectional switch portfolio, opens the door further to medium-voltage systems.

The 900 V GaN devices allow Enphase to continue using components rated below 1 kV, expanding the design options towards high-performance power conversion typically governed by silicon carbide (SiC). This supports a single-stage architecture with high-frequency switching, low electromagnetic interference (EMI), and fewer points of failure. Switching at such high frequency shrinks the transformers and other magnetics needed in the power stage, cutting size, weight, and cost.

Higher-voltage switches within that low-voltage envelope change the economics of power conversion. In a solid-state transformer, a medium-voltage input can be handled by fewer inverters connected in series while retaining the low switching losses and intrinsic bidirectionality of GaN BDS. Fewer building blocks means lower system-level losses at the same input current, fewer components in the power path, and a lower total switch count. On the DC side, higher-voltage unidirectional switch (UDS) devices allow power to be generated at a unipolar 800 volts rather than split +/-400 V buses, and support future 1,500 VDC bus architectures through split +/-750 V generation with fewer switches and lower bridge losses.

The technology is particularly relevant to the Enphase IQ^® Solid-State Transformer (IQ SST), the company's solid-state transformer platform for AI data centers, where power density, efficiency, and uptime drive the economics of every megawatt deployed. The same devices are expected to benefit commercial solar inverters by enabling three-phase, line-to-line designs for 480 V applications in the United States and 400 V applications elsewhere, again with fewer switches, lower losses, and lower cost.

"Enphase asks more of our technology than almost anyone, and medium-voltage solid-state transformers are exactly where high-voltage GaN proves its value," said Johannes Schoiswohl, senior vice president and head of GaN Systems Business Line at Infineon. "Moving past 650 V lets system designers strip cost and loss out of the architecture rather than optimizing around it."

"GaN is not new to us. It has been running in Enphase IQ9 Microinverters in the field, and that field data is why we trust it in a megawatt-class system," said Hans van Antwerpen, senior vice president and chief technology officer at Enphase Energy. "Moving to 900 V gives us more voltage headroom without giving up high-frequency switching, and it allows us to stay with components rated below 1 kV while reducing the number of converters in the system. Fewer parts in the power path means higher efficiency and fewer things that can fail."

The 900 V GaN BDS devices have been successfully tested and are now being integrated into IQ SST development builds, with production qualification expected to follow. Learn more about the use of GaN in Enphase products in its white paper.

About Enphase Energy, Inc.

Enphase Energy is a global energy technology company advancing intelligent power systems for homes, businesses, and next-generation AI data centers. The company designs semiconductor-based energy technologies spanning solar, batteries, EV charging, energy management, and virtual power plants, and is developing solid-state transformer technology to address the rapidly growing power demands of AI data centers. Based in Fremont, California, Enphase is the world’s leading supplier of microinverter-based solar and battery systems. The company revolutionized the solar industry with its microinverter technology and has shipped approximately 89.4 million microinverters, with approximately 5.3 million Enphase-based systems deployed in more than 165 countries. Enphase products enable people to harness the sun to make, use, save, and sell their own power, all controlled through the Enphase App. For more information, visit https://enphase.com/.

©2026 Enphase Energy, Inc. All rights reserved. Enphase Energy, Enphase, the “e” logo, IQ, and certain other marks listed at https://enphase.com/trademark-usage-guidelines are trademarks or service marks of Enphase Energy, Inc. Other names are for informational purposes and may be trademarks of their respective owners.

Forward-Looking Statements

This press release contains forward-looking statements, including statements regarding the expected capabilities and performance of Enphase Energy's IQ SST, including safety, quality, reliability, efficiency, scalability, and power conversion capabilities; the expected capabilities, performance, and benefits of 900 V GaN BDS devices, including operation in IQ SST power modules; the expected benefits of extending GaN technology beyond 650 V, including reduced losses, lower system cost, higher power density, fewer components, lower switch counts, and improved system efficiency; the expected benefits of Enphase's collaboration with Infineon Technologies AG; the integration, qualification, and deployment of 900 V GaN BDS devices in IQ SST and other Enphase products; the expected benefits of such devices for AI data center infrastructure, commercial solar inverters, and other power conversion applications; the anticipated use of 900 V GaN BDS devices in future power architectures, including medium-voltage systems and higher-voltage DC bus configurations; and the availability and timing of future product development and production qualification activities. These forward-looking statements are based on Enphase Energy's current expectations and inherently involve significant risks and uncertainties. Actual results and the timing of events could differ materially from those contemplated by these forward-looking statements as a result of such risks and uncertainties. Such risks include, but are not limited to, technological development and validation risks; market demand for AI data center infrastructure, commercial solar products, and related power conversion solutions; competitive developments; the ability to achieve anticipated performance, reliability, efficiency, scalability, and cost objectives; manufacturing and supply chain availability and costs; the successful integration, testing, qualification, and commercialization of new semiconductor technologies; and changes in regulatory or compliance requirements. Such risks and uncertainties are more fully described in Enphase Energy's filings with the Securities and Exchange Commission, including in the sections entitled "Risk Factors" and elsewhere in Enphase Energy's most recently filed Annual Report on Form 10-K and Quarterly Reports on Form 10-Q, as well as other documents that Enphase Energy files from time to time with the Securities and Exchange Commission. Enphase Energy undertakes no duty or obligation to update any forward-looking statements contained in this release as a result of new information, future events or changes in its expectations, except as required by law.

Contact:

Enphase Energy
press@enphaseenergy.com