Navitas Delivers Latest Gen 5 GaNFast™ Manufactured in the U.S. Through GlobalFoundries Partnership to Accelerate AI Infrastructure
Rhea-AI Summary
Navitas Semiconductor (Nasdaq: NVTS) announced that first shipments of its U.S.-manufactured 5th Generation GaNFast™ power semiconductors, produced in partnership with GlobalFoundries, will begin in September 2026. The devices are manufactured on GF’s 200 mm GaN-on-silicon line in Burlington, Vermont.
The long-term strategic partnership, initiated in November 2025, combines Navitas’ proprietary GaNFast technology and over 300 issued and pending GaN/SiC patents with GF’s high-volume U.S. production capabilities to provide a trusted domestic supply of advanced GaN power semiconductors for AI infrastructure, high-performance computing, industrial electrification, and critical national security applications.
The initial Gen 5 GaNFast family is expected to include 650 V GaN FETs with RDS(ON) options of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ, with first wafers shipping in September, internal samples in October, and strategic customer samples targeted before year-end.
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Market reaction after Gen 5 GaN partnership: NVTS -3.62%
Following this news, NVTS has declined 3.62%, reflecting a moderate negative market reaction. Our momentum scanner has triggered 2 alerts so far, indicating moderate trading interest and price volatility. The stock is currently trading at $11.17.
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Key Figures
Previous Partnership,AI Reports
| Date | Event | Sentiment | 24h Move | Catalyst |
|---|---|---|---|---|
| Jun 03 | AI infrastructure partnership | Positive | +19.3% | NVIDIA MGX collaboration supported 800 VDC AI data-center architectures. |
| Dec 08 | India GaN partnership | Positive | +1.3% | Cyient partnership targeted local GaN products and manufacturing in India. |
| Apr 09 | AI power partnership | Positive | +16.6% | Great Wall partnership targeted 400V-DC AI data-center power architecture. |
| Apr 03 | AI power partnership | Positive | -16.0% | Great Wall partnership introduced a 2.5kW converter for AI data centers. |
24h Move is the share-price change in the day after each event; other market factors may also have contributed.
Tag-specific partnership/AI announcements showed mixed reactions, including three positive responses and one negative divergence.
Key Terms
gallium nitride technical
GaN-on-silicon technical
process design kits technical
RDS(ON) technical
silicon carbide technical
AI-generated analysis. How Rhea-AI works. Not financial advice.
Combining Navitas’ proprietary Gen 5 GaNFast™ technology and expertise with GlobalFoundries’ advanced U.S. 200mm manufacturing and process baseline strengthens U.S. leadership in GaN and secures the domestic supply chain for next-generation AI and critical infrastructure
TORRANCE, Calif., Sept. 01, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that the first shipments of U.S.-manufactured 5th Generation GaNFast™ technology, in partnership with GlobalFoundries (GF), will begin in September, marking a major milestone in strengthening the domestic GaN ecosystem for AI infrastructure and critical national security applications.
In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate U.S. GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power integrated circuits (ICs) for production at GF’s US based 200mm GaN-on-Si manufacturing facility in Burlington, Vermont.
The first shipment of the Gen 5 GaNFast family marks a major milestone in the Navitas-GF collaboration, bringing Navitas’ next-generation GaNFast technology into a U.S. production foundry for AI infrastructure, performance computing, industrial electrification, and critical national security applications.
Since 2014, Navitas has pioneered GaN power semiconductor innovation, establishing industry leadership in GaNFast FETs and power ICs that integrate power, drive, control, sensing and protection. With more than 300 issued and pending patents across GaN and SiC, Navitas has built deep proprietary expertise in GaN process design kits (PDKs), device architectures and integrated power technologies.
Working closely with GF, Navitas applied this expertise to optimize its proprietary Gen 5 GaNFast technology and device architectures for manufacturing on GF’s advanced 200 mm GaN-on-silicon platform. Combined with GF’s decades of semiconductor manufacturing expertise and high-volume production capabilities, the partnership delivers a trusted U.S.-based supply of advanced GaN power semiconductors for AI infrastructure and other critical applications.
“This milestone demonstrates the strength of American innovation and manufacturing,” said Chris Allexandre, President and CEO of Navitas. “Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the U.S. semiconductor ecosystem.”
“The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business. “By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling the high-efficiency power solutions needed for AI infrastructure and other critical applications while strengthening the resilience of the U.S. semiconductor ecosystem.”
The initial product family is expected to include 650 V GaN FETs with RDS(ON) values of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ, with first wafers scheduled to ship in September, internal samples in October, and strategic customer samples before the end of the year.
To learn more about Navitas’s capabilities in GaN technology, please contact a Navitas Representative or email: info@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide-bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented ‘trench-assisted planar technology’ to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
About GlobalFoundries
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for automotive, aerospace and defense, data center, smart mobile devices, internet of things and other high-growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, https://gf.com/.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com
GlobalFoundries
Stephanie Gonzalez
stephanie.gonzalez@gf.com
Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com
Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/13ece1b8-bb44-4193-967f-12611bb3a173
