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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
Access curated press releases and analysis covering earnings reports, product launches, and sustainability initiatives. Stay informed about NVTS' leadership in energy-efficient power conversion technologies serving mobile, EV, and data center markets.
Discover updates on patent milestones, manufacturing expansions, and industry collaborations that demonstrate Navitas' technical expertise in high-frequency power ICs. Our collection ensures you never miss critical developments impacting this semiconductor innovator.
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Navitas Semiconductor (Nasdaq: NVTS) has announced a global agreement with Mouser Electronics to distribute its GaN and SiC power ICs. This partnership aims to meet the rising demand in the $22 billion market for efficient, integrated wide band-gap (WBG) semiconductors. The GaNFast™ power ICs will provide faster charging and energy savings, while GeneSiC devices are tailored for high-power applications. According to David Carroll, Senior VP Worldwide Sales at Navitas, the collaboration enhances accessibility to their advanced technologies for electronic designers. Mouser, a prominent distributor, anticipates improved customer service and logistics for these innovative power devices. With over 75 million GaN units shipped and a 20-year warranty, Navitas continues to establish itself as a leader in the semiconductor industry.
Navitas Semiconductor (Nasdaq: NVTS) showcased its advanced gallium nitride (GaN) and silicon carbide (SiC) power products at the PCIM 2023 conference in Nuremberg, Germany, from May 9-11, 2023. The event, a key platform for power electronics, attracted over 400 technical presentations. Navitas highlighted products designed for the EV, solar, energy storage, home appliance, and industrial markets, emphasizing their reliability and efficiency. Key technologies include GaNFast™ power ICs and GeneSiC™ devices, promising significant reductions in CO2 emissions by 2050. The company is committed to its mission, 'Electrify our World™,' providing insights through demonstrations and panel sessions.
Navitas Semiconductor (Nasdaq: NVTS) has achieved a significant milestone with its GaNFast™ technology, enabling the world’s first 240 W ultra-fast charger for the realme GT3 smartphone. This charger can fully charge the device’s 4600 mAh battery in just 9.5 minutes, with a 50% charge possible in 4 minutes. The ultra-compact design of the charger, weighing only 173 g, delivers a power density of 2.42 W/cc. The GaNFast ICs also utilize GaNSense™ technology for real-time power monitoring and efficiency. Realme's GT3, launched during Mobile World Conference 2023, incorporates this cutting-edge charging solution, marking a significant advancement in fast-charging technology.
Navitas Semiconductor (Nasdaq: NVTS) has launched a new family of GaNSense Control ICs, showcasing advanced performance and integration of gallium nitride (GaN) and low-voltage silicon technology. These innovations allow for charging systems that operate up to 20x faster while reducing size and energy consumption. The initial product range supports various applications including smartphone and laptop chargers, with over one million units shipped. The integration of high-speed controller technology is set to unlock an additional $1B/year market opportunity, enhancing Navitas' influence in sectors like renewable energy, EVs, and data centers.
Navitas Semiconductor (Nasdaq: NVTS) has entered a distribution agreement with Richardson Electronics to promote next-generation silicon carbide (SiC) semiconductors across the Americas. This partnership aims to leverage Richardson's technical expertise and market presence in sectors like renewable energy, medical, and transportation. The GeneSiC portfolio includes devices rated from 650 V to 6.5 kV, employing advanced trench-assisted planar-gate technology, optimizing performance and reliability. With over 100 components, these devices are designed for high efficiency and versatility, enhancing system performance while reducing size and weight.
Navitas Semiconductor (Nasdaq: NVTS) announced its participation in a Taiwan Investor Meeting on March 13, 2023, at 9:30 PM US Eastern time, hosted by MESH Ventures. The event will feature CFO Ron Shelton and VP of Corporate Marketing Stephen Oliver discussing recent innovations and market developments, followed by a Q&A session. Investors interested in attending can register via the MESH Ventures website. Navitas specializes in next-generation power semiconductors, focusing on GaN and SiC technologies, and aims to penetrate the $22 billion market opportunity by replacing legacy silicon chips.
Navitas Semiconductor (Nasdaq: NVTS) announced participation in non-deal roadshows on March 7, 2023, showcasing its GaNFast gallium nitride power ICs and GeneSiC silicon carbide power devices. The company aims to capture a share of a $22 billion market by expanding its technology and market presence, emphasizing its commitment to sustainability. CEO Gene Sheridan expressed optimism for continued growth in 2023 as the shift from fossil fuels accelerates. Navitas is recognized for shipping over 70 million GaN units and holds over 185 patents, with a unique 20-year warranty on its products.
Navitas Semiconductor (Nasdaq: NVTS) reported a remarkable 60% revenue growth in 2022, totaling $37.9 million. The fourth quarter revenues reached $12.3 million, representing a 68% increase year-over-year. However, gross margins declined, with GAAP gross margin at 31.5% for the year, down from 45% in 2021. The company reported a GAAP loss from operations of $121 million in 2022, an increase from $68.5 million in 2021. Looking ahead, first-quarter 2023 revenues are projected to grow approximately 85% year-over-year. CEO Gene Sheridan emphasized the company's expansion into high-growth markets including EV, solar, and data centers.
Navitas Semiconductor (Nasdaq: NVTS) announced its GaNFast technology successfully fast-charges the new OnePlus 11 5G smartphone, featuring a Qualcomm Snapdragon 8 Gen 2 chipset. The 100 W SUPERVOOC charger utilizes an NV6134 GaNFast IC, enabling charging speeds up to three times faster compared to traditional silicon options, with 40% energy savings. This compact charger weighs just 112 g, achieving a power density of 1.18 W/cc. The partnership highlighted Navitas as a key collaborator at the OnePlus launch event on February 7, 2023 in New Delhi. Navitas continues to advance its technology and maintain strong ties with OnePlus, showcasing its growing influence in the power semiconductor industry.