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Navitas Powers Samsung Galaxy S24 with Integrated AI

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Navitas Semiconductor (NVTS) announces the use of GaNFast™ technology in Samsung's Galaxy S24 for 'Super-Fast Charging'. The 25W GaNFast unit charges the 4000mAh battery by 50% in 30 minutes, offering compatibility with various Samsung products. The technology enables a 75% reduction in power consumption during sleep mode, with a 30% size shrink compared to conventional chargers.
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The introduction of Navitas Semiconductor's GaNFast™ technology in Samsung's new Galaxy S24 smartphone represents a significant advancement in charging efficiency and device compatibility. The adoption of such technology by a major player like Samsung could signal a broader industry shift towards gallium nitride (GaN) power ICs, potentially influencing market dynamics in the semiconductor sector. From a market research perspective, the ability of GaNFast™ to provide a 50% charge in 30 minutes is a strong selling point that may enhance consumer satisfaction and brand loyalty. Additionally, the compatibility with other Samsung devices creates a cohesive ecosystem, which can lead to increased sales across multiple product lines.

Furthermore, the emphasis on sustainability with a 75% reduction in power consumption during sleep mode aligns with the growing consumer demand for environmentally friendly products. This approach could bolster Samsung's brand image and market position in the green technology space. It is worth monitoring the market response to this innovation and assessing whether competitors will accelerate their own GaN technology integration to keep pace.

Navitas Semiconductor's announcement could have financial implications for both Navitas and Samsung. The partnership and technology integration might lead to increased revenue streams for Navitas as demand for GaN-based solutions grows. For Samsung, the differentiation provided by the GaNFast™ technology in its Galaxy S24 may contribute to a competitive edge in the smartphone market, potentially translating to higher sales volumes and improved profit margins.

Investors should note that the success of this technological integration will depend on consumer adoption rates and the operational efficiency of manufacturing and distributing the new chargers. The long-term financial impact will also hinge on the durability of the technology and its ability to maintain performance advantages over traditional silicon-based solutions. It's crucial to analyze future financial disclosures from both companies to gauge the actual market impact of this partnership.

The environmental sustainability aspect of Navitas Semiconductor's GaNFast™ technology is noteworthy. A 75% reduction in power consumption during sleep mode represents a significant leap in energy efficiency. This not only reduces electricity usage but also diminishes the carbon footprint associated with charging devices. As businesses and consumers increasingly prioritize sustainability, such innovations could drive regulatory support and consumer preference, leading to market expansion opportunities for Navitas and Samsung.

However, it is essential to consider the full lifecycle environmental impact of the technology, including production and end-of-life disposal. The true sustainability of the GaNFast™ technology should be assessed in a broader context, taking into account the environmental costs of raw material extraction, manufacturing processes and potential recycling challenges. This comprehensive understanding can inform stakeholders about the net environmental benefits of adopting GaN technology over its entire lifespan.

Next-gen gallium nitride (GaNFast™) technology enables “Super-Fast Charging” (SFC)

TORRANCE, Calif., Feb. 21, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology has announced that its GaNFast™ power ICs drive Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced Galaxy S24 smartphone.

Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120 Hz screen, plus the Galaxy S24 delivers innovative and practical AI features to help transform the way users communicate, create and discover the world. Galaxy AI features like Live Translate, Chat Assist and new “Circle to Search” with Google, to improve nearly every experience that S24 users can enjoy.

The 25 W GaNFast unit delivers 50% charge to the high-capacity 4000 mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C) specification makes it compatible with other Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and Galaxy A23.

Designed with sustainability in mind, the 25 W power adapter features a 75% reduction in power consumption sleep mode. Navitas’ GaNFast technology is deployed in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz – 3x faster than standard silicon designs – and delivers a 30% size shrink vs. conventional charger designs.

“We are excited to extend our relationship with Samsung as they continue to develop groundbreaking mobile phone technology,” said David Carroll, Sr. VP Worldwide Sales for Navitas. “Deploying GaNFast ICs has allowed Samsung to create an ultra-compact, lightweight and efficient 25W adapter that can rapidly re-charge the new Galaxy S24 and a variety of other phones and accessories in the Samsung range.”

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. As of August 2023, over 125 million GaN and 12 million SiC units have been shipped, and with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/d68f94c9-d19c-4094-a427-d9072412c4c0


Navitas Semiconductor announced the use of GaNFast™ technology for 'Super-Fast Charging' in Samsung's Galaxy S24.

The 25W GaNFast unit can charge the high-capacity 4000mAh battery by 50% in just 30 minutes.

The 25W GaNFast unit is compatible with various Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip, and Galaxy A23.

The 25W power adapter with GaNFast technology offers a 75% reduction in power consumption during sleep mode.

The GaNFast charger offers a 30% size shrink compared to conventional charger designs.
Navitas Semiconductor Corporation

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About NVTS

navitas semiconductor enables new classes of high frequency, high efficiency & high density power electronics by introducing the world’s first and fastest allgan™ power ics. headquartered in el segundo, california, usa with a highly successful and proven team of power semiconductor professionals, navitas has over 150 years of combined experience and more than 100 patents to date, and is dedicated to delivering significant end-customer value. navitas gan patents in core device, circuit, packaging and system technology complement extensive trade secrets, access to over $100m of r&d equipment, and ongoing r&d collaboration with the hughes research lab (hrl) for future power gan generations.