Navitas Semiconductor Corp Stock Price, News & Analysis

Navitas Semiconductor (Nasdaq: NVTS) has introduced its 3rd generation 650 V 'fast' silicon carbide (SiC) MOSFETs in a robust TOLL package. These Gen-3 'Fast' (G3F) SiC MOSFETs are designed for high-power, high-reliability applications such as AI data centers, EV charging, and energy storage solutions. Key features include:

- Best-in-class low on-resistance of 20 to 55 mΩ
- Optimized for fastest switching speed and highest efficiency
- Up to 25°C lower case temperatures and up to 3x longer life than alternatives
- 9% reduction in junction-to-case thermal resistance
- 30% smaller PCB footprint and 60% smaller size than D2PAK-7L

Navitas' 4.5 kW AI power system reference design, featuring the G3F SiC MOSFET, achieves a peak efficiency above 97% and a power density of 137 W/inch³, making it the world's highest power density AI PSU.

Navitas Semiconductor (Nasdaq: NVTS) has unveiled a groundbreaking 4.5 kW AI data center power supply reference design, featuring optimized GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. This design achieves the world's highest power density at 137 W/in3 with over 97% efficiency, addressing the increasing power demands of next-generation AI GPUs like NVIDIA's Blackwell B100 and B200.

The design combines 650 V G3F SiC MOSFETs for the PFC stage and 650 V GaNSafe power ICs for the stage, exploiting the strengths of each semiconductor technology. This innovation enables higher frequency operation, cooler performance, and improved reliability. The company reports over 30 data center customer projects in development, potentially driving millions in GaN and SiC revenue from 2024 into 2025.

Navitas Semiconductor (Nasdaq: NVTS) has announced it will release its second quarter 2024 financial results on Monday, August 5th, 2024, after the market closes. The company will host a conference call and live webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern on the same day to present the results and answer questions from financial analysts.

Investors and interested parties can access the conference call via toll-free dial-in numbers: (800) 715-9871 or (646) 307-1963, using Conference ID: 6394013. A live webcast will be available at https://edge.media-server.com/mmc/p/5g4qt2xi. Following the event, a replay of the call will be accessible from the Investor Relations section of Navitas Semiconductor's website at https://ir.navitassemi.com/.

Navitas Semiconductor, the leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced a collaboration with J Rep, their Japanese partner, at the Techno-Frontier trade show.

The event, happening from July 24-26, 2024, at Tokyo Big Sight, will showcase Navitas' innovative technologies like GaNSafe™ GaN power IC, Gen-4 GaNSense™ Half-Bridge ICs, and Gen-3 Fast GeneSiC power FETs.

These products offer high efficiency and reliability for AI data centers, EVs, industrial systems, and fast charging applications.

Techno-Frontier, established in 1981, is Japan's premier exhibition for power supplies and components, expecting over 400 exhibitors and 34,000 visitors.

Navitas Semiconductor (Nasdaq: NVTS) announced that its GaNFast power ICs will be used in Lenovo's latest GaN chargers—the Xiaoxin 105 W and Legion C170 W. The Xiaoxin 105 W charger is designed for daily travel, offering 105 W of power, three ports, and is lightweight at 206 grams. The Legion C170 W charger caters to gamers, delivering 170 W of power and weighing 245 grams. This collaboration marks a continued partnership that has previously resulted in high-performance chargers for Lenovo's gaming and travel segments. Both companies are also committed to sustainability, with Lenovo verified by SBTi for net zero targets and Navitas being CarbonNeutral® certified. Navitas' technology enables efficient, lightweight chargers that reduce carbon emissions.

Navitas Semiconductor (Nasdaq: NVTS) has introduced its Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs, optimized for rapid switching, high efficiency, and increased power density. These components are designed to enhance the performance of AI data centers and EV charging infrastructures.

The G3F MOSFETs showcase a 40% improvement in hard-switching figures-of-merit compared to competitors, enabling next-gen AI power supply units to increase output up to 10 kW and rack power up to 120 kW. Utilizing 'trench-assisted planar' technology, these devices offer superior performance, robustness, and lower power losses, with a 25°C lower case temperature and up to three times longer life than competing products.

In the AI sector, Navitas' latest 4.5 kW high-power density AI Server PSU boasts a power density of 138 W/inch³ and over 97% efficiency. For the EV market, the 1,200 V/34 mOhm G3F FETs enable 22 kW, 800V bi-directional OBC and 3 kW DC-DC converters to reach a power density of 3.5 kW/L and 95.5% peak efficiency.

Navitas Semiconductor (Nasdaq: NVTS) will showcase its latest gallium nitride (GaN) and silicon carbide (SiC) technologies at PCIM 2024 in Nuremberg, Germany from June 11-13. The company will highlight its GaNFast™ and GeneSiC™ semiconductors, emphasizing their applications in AI, EVs, industrial processes, solar energy, and energy storage. Navitas' booth, 'Planet Navitas,' will display technologies promising increased portability, longer range, faster charging, and grid independence, while also contributing to reduced carbon emissions. The event features key presentations on high-efficiency AC-DC converters and evaluations of SiC devices for high-frequency applications, enhancing Navitas' $1.6 billion customer pipeline within a $22 billion market opportunity.

Navitas Semiconductor, a leading pure-play power semiconductor company, announced its participation in several upcoming investor events. The company, known for its GaNFast™ gallium nitride (GaN) power ICs and GeneSiC™ silicon carbide (SiC) technology, aims to review the drivers of its $1.6 billion pipeline and its mission to “Electrify Our World™.”

Key events include the MESH Ventures Call on May 14th, the Craig-Hallum Institutional Investor Conference on May 29th, the Baird Global Consumer, Technology & Services Conference on June 4-5th, the William Blair Growth Stock Conference on June 6th, the Rosenblatt Virtual Technology Summit on June 13th, and the ROTH London Conference on June 26th. Executives like CEO Gene Sheridan, CFO Janet Chou, and VP Investor Relations Stephen Oliver will be presenting and available for 1-on-1 meetings.

Live webcasts and replays of presentations will be available on Navitas Semiconductor's website.

Navitas Semiconductor announced its first quarter 2024 financial results, showcasing a 73% increase in revenue driven by GaN adoption in various sectors. The company highlighted new GaNSlim™ technology for enhanced system integration and cost-efficiency. Despite market challenges, Navitas CEO expressed optimism due to strong customer demand and a growing $1.6 billion pipeline.

Financially, revenue reached $23.2 million, while GAAP loss from operations was $31.6 million. Cash reserves stood at $129.7 million. The company reported significant milestones in AI data centers, EV chargers, solar applications, and industrial sectors. Navitas expects Q2 revenues around $20 million, with a focus on innovation and growth.