Navitas Semiconductor Corporation develops next-generation power semiconductors built around gallium nitride and silicon carbide technologies. Its GaNFast power ICs integrate GaN power, drive, control, sensing and protection functions, while GeneSiC devices serve high-voltage SiC power applications. Company updates frequently address AI data centers, performance computing, energy and grid infrastructure, industrial electrification, e-mobility, telecommunications and fast-charging markets.
Recurring Navitas news covers financial results, the company’s shift toward high-power markets, product platforms such as DC-DC power delivery boards, technology licensing and supply-chain partnerships, and governance changes including finance leadership and board appointments.
Navitas Semiconductor (NVTS) announces an "AI Tech Night" event in Taipei to showcase its next-generation OCP data center power supply unit (PSU) reference design. The company will demonstrate how its GaNSafe™ and GeneSiC™ technologies are revolutionizing AI data center infrastructure.
The event highlights Navitas' progression in PSU development, from their initial 2.7 kW CRPS offering 2x higher power density, to their groundbreaking 8.5kW AI data-center power supply achieving 98% efficiency. Their latest innovation, IntelliWeave™, combined with GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies of 99.3% and reduces power losses by 30%.
The company will also present the world's first mass-produced 650V Bi-Directional GaNFast™ power ICs and IsoFast™ high-speed isolated gate drivers, enabling a shift from two-stage to single-stage power topologies for optimized data center power supply design.
Navitas Semiconductor (NVTS) has appointed Cristiano Amoruso to its board of directors, effective immediately. Amoruso, former CEO of Suniva and partner at Lion Point Capital, brings significant operating expertise in technology and renewable energy industries. The appointment comes at a strategic time as Navitas aims to capitalize on multi-billion dollar market opportunities in GaN and SiC semiconductor technology, particularly for applications in datacenters, solar power plants, and electric vehicles.
Board Chair Richard Hendrix emphasized that Amoruso's appointment strengthens corporate governance and supports the company's path to profitability. Amoruso will stand for election as an independent Class I director at the company's 2025 annual stockholders' meeting alongside Gene Sheridan and Ranbir Singh.
Navitas Semiconductor (NVTS) has unveiled a new family of GaNSense™ Motor Drive ICs designed for home appliances and industrial drives up to 600W. The integrated solution combines two GaN FETs in a half-bridge configuration, offering significant advantages over traditional silicon IGBT solutions, including 4% higher efficiency, 40% smaller PCB footprint, and 15% lower system cost.
The 650V family includes models NV6257, NV6287, and NV6288, featuring bidirectional lossless current sensing, adjustable slew rates, and autonomous freewheeling function. Key applications include air conditioners, heat pumps, washing machines, dryers, dishwashers, refrigerators, hair dryers, and industrial drives for pumps, circulators, and fans.
The ICs incorporate comprehensive safety features including short circuit protection, over-temperature protection, and 2kV ESD protection on all pins.Navitas Semiconductor (NVTS) has announced significant corporate governance changes to enhance stockholder value. Richard Hendrix, an independent director since 2021, has been appointed as Board Chair, replacing CEO Gene Sheridan who remains on the board and continues as CEO.
The company has formed an Executive Steering Committee focused on expense management, product roadmap acceleration, go-to-market strategies, and executive appointments. The committee will be chaired by Dr. Ranbir Singh, with Richard Hendrix and David Moxam as members.
In another key change, Daniel Kinzer, co-founder and CTO/COO, has stepped down from his executive roles and board position but will continue as an advisor for GaN technology. The board plans to appoint a new independent director for election as a Class I director at the 2025 annual stockholders' meeting.
Navitas Semiconductor (NVTS) will showcase several breakthrough technologies in GaN and SiC power semiconductors at PCIM 2025. The company announced the world's first production-released 650V bi-directional GaNFast ICs with IsoFast drivers, enabling single-stage topologies for EV charging and solar applications.
Key innovations include automotive-qualified GaNSafe ICs, advanced SiCPAK power modules with 5x lower thermal resistance, and new GaNSense Motor Drive ICs. The company also introduced GaNSlim™ for integrated power solutions and demonstrated the world's first 8.5kW AI data center power supply achieving 98% efficiency, along with a 4.5kW power supply featuring 137 W/in³ density.
Navitas Semiconductor (NVTS) has scheduled its Q1 2025 financial results announcement for Monday, May 5th, 2025, after market close. The company will host a conference call and live webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern the same day.
Investors and analysts can access the conference call via toll-free numbers (888) 596-4144 or (646) 968-2525 using Conference ID: 2033529. A live webcast will be available, and a replay can be accessed through the Investor Relations section of Navitas' website.
Navitas Semiconductor (NVTS) has unveiled its latest SiCPAK™ power modules featuring advanced epoxy-resin potting technology and proprietary trench-assisted planar SiC MOSFET technology. The new 1200V modules demonstrate 5x lower thermal resistance increase after thermal shock testing compared to conventional silicone-gel-filled modules.
Key features include:
- Enhanced reliability in high-humidity environments
- Up to 20% lower losses and cooler operation
- Superior isolation test performance compared to silicone-gel modules
- Available in ratings from 4.6 mΩ to 18.5 mΩ
The modules target multiple applications including EV DC fast chargers, industrial motor drives, power supplies, solar inverters, energy storage systems, industrial welding, and induction heating. The products are immediately available for mass production with optional pre-applied Thermal Interface Material.
Navitas Semiconductor (NVTS) has achieved a significant milestone with its high-power GaNSafe™ ICs receiving both AEC-Q100 and AEC-Q101 automotive qualifications. The company's 4th generation GaNSafe family integrates advanced features including 350ns max latency short-circuit protection, 2kV ESD protection, and programmable slew rate control, all managed through a simplified 4-pin interface.
The qualification validates both discrete power FET stage and IC solution compliance with automotive standards. Navitas' comprehensive reliability report, analyzing over 7 years of production data, demonstrates field failure rates approaching 100 parts per billion (ppb) across more than 250 million shipped units.
In March 2025, Navitas also introduced the first 650V Bi-Directional GaNFast ICs with IsoFast Drivers, enabling single-stage topologies in AC-DC and AC-AC conversion. This innovation promises up to 10% cost savings, 20% energy savings, and 50% size reductions in EV on-board chargers.