Welcome to our dedicated page for Navitas Semiconductor news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor stock.
Navitas Semiconductor Corporation develops next-generation power semiconductors built around gallium nitride and silicon carbide technologies. Its GaNFast power ICs integrate GaN power, drive, control, sensing and protection functions, while GeneSiC devices serve high-voltage SiC power applications. Company updates frequently address AI data centers, performance computing, energy and grid infrastructure, industrial electrification, e-mobility, telecommunications and fast-charging markets.
Recurring Navitas news covers financial results, the company’s shift toward high-power markets, product platforms such as DC-DC power delivery boards, technology licensing and supply-chain partnerships, and governance changes including finance leadership and board appointments.
Navitas Semiconductor (NVTS) reported Q4 2024 and full-year financial results, highlighting record GaN revenues despite industry headwinds. Total revenue for Q4 2024 was $18.0 million, down from $26.1 million in Q4 2023. Full-year 2024 revenue grew 5% to $83.3 million.
The company secured $450 million in customer design-wins and expanded its customer pipeline by 92% to $2.4 billion. Notable growth was seen in Data Center and EV sectors, with AI driving the fastest-growing end-market. The company maintains a strong cash position of $86.7 million.
For Q1 2025, Navitas expects revenues between $13.0-15.0 million with a non-GAAP gross margin of approximately 38%. The company plans to unveil breakthrough power conversion technology on March 12th, expected to drive improvements in energy efficiency across multiple markets.
Navitas Semiconductor (NVTS) will showcase its latest advances in GaN and SiC technologies at APEC 2025 in Atlanta from March 16-20. The company will unveil a new 'paradigm in power conversion' during a live-streamed event on March 12th.
Key highlights include the world's first 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply delivering 4.5 kW with 137 W/in3 and over 97% efficiency. The company will also present GaNSlim™, a new generation of integrated GaN power ICs for mobile devices and laptops, and automotive-qualified Gen-3 Fast SiC MOSFETs with trench-assisted planar technology.
The technology showcase demonstrates Navitas' commitment to transitioning from legacy silicon to next-generation power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) has announced a groundbreaking live-streamed event scheduled for March 12th, 2025, where it will unveil significant innovations in power conversion technology. The company will present new developments in both semiconductor and system innovations, expected to enhance energy efficiency and power density while accelerating the adoption of gallium nitride (GaN) and silicon carbide (SiC) technologies over traditional silicon.
The event will feature presentations from company co-founders Gene Sheridan (CEO), Dan Kinzer (CTO, COO), and Jason Zhang (VP Engineering), who will detail the technology, provide specific application examples, and discuss market impacts and business opportunities. The presentation will be streamed twice, at 8 am PST and 6 pm PST, with Chinese and English language options available.
Navitas Semiconductor (NVTS) has announced its schedule to report Q4 and full year 2024 financial results on Monday, February 24th, 2025, after market close. The company will host a conference call and webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern on the same day, where management will present financial results and answer analyst questions.
Following the earnings call, Navitas will participate in three major investor events: the Susquehanna 14th Annual Technology Conference (February 28th, virtual), the Morgan Stanley Technology, Media & Telecom Conference (March 3rd, San Francisco), and the 37th Annual Roth Conference (March 17th, Dana Point). CFO Todd Glickman will attend all events, while CEO Gene Sheridan will join for the Morgan Stanley conference, which includes a fire-side chat at 2:35pm Pacific.
Navitas Semiconductor (NVTS) announced the integration of its GaNFast and GeneSiC power technologies into Dell's family of notebook adapters, ranging from 60W to 360W. The technology enables 3x more power and 3x faster charging in half the size and weight compared to traditional silicon power devices.
The implementation supports Dell's new AI notebooks featuring Neural Processor Units (NPUs). The adapters demonstrate significant environmental benefits, requiring up to 50% less plastic and utilizing post-recycled materials. Each GaNFast power IC saves 4 kg CO2, while each SiC MOSFET saves 25 kg CO2 compared to legacy silicon chips.
The collaboration between Dell and Navitas, which began in 2020, focuses on improving charging speed, efficiency, size, weight, and environmental impact.
Navitas Semiconductor (Nasdaq: NVTS), a leading power semiconductor company specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in an upcoming CICC investor call. The event is scheduled for Wednesday, December 11th at 6pm US Pacific time (9pm US Eastern, December 12th at 10am Beijing/Shanghai/Hong Kong time).
The group call will feature presentations from Gene Sheridan (CEO), Todd Glickman (CFO), and Charles Zha (VP, GM Navitas China). Interested participants can register by contacting Carla Lai at the CICC Research Department.
Navitas Semiconductor (NVTS) will showcase breakthrough technologies at CES 2025 in Las Vegas, focusing on AI data centers, EVs, and mobile applications. The company will present several innovations including the world's only 650V bi-directional GaNFast power ICs, an 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply at 137 W/in3.
Key highlights include automotive-qualified Gen-3 Fast SiC MOSFETs, GaNSlim integrated solutions for mobile devices, and SiCPAK high-power modules for EV charging. The company's technologies aim to advance the transition from legacy silicon to next-generation GaN and SiC power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) has appointed Dr. Ranbir Singh to its board of directors. Dr. Singh, formerly Executive Vice President at Navitas and founder/CEO of GeneSiC Semiconductor, brings over 20 years of Silicon Carbide (SiC) innovation experience, including 8 years at Wolfspeed. As a recognized leader in power electronics, he holds numerous accolades, including over 200 published papers and 40 US patents.
Dr. Singh joined Navitas through the GeneSiC acquisition, which he founded in 2004. He holds degrees from the Indian Institute of Technology and North Carolina State University, where he was inducted into the ECE Alumni Hall of Fame in 2022. His appointment strengthens Navitas' position in next-generation power semiconductors, particularly in GaN power ICs and SiC technology.
Navitas Semiconductor (NVTS), a leader in next-generation power semiconductors specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announces participation in two upcoming investor events. The company will join the MESH Ventures Investor Call on December 2nd, 2024, featuring CEO Gene Sheridan and CFO Todd Glickman. Additionally, Navitas will attend the Needham 27th Annual Growth Conference on January 14-15th, 2025, in New York, which includes one-on-one meetings and a fireside chat hosted by Senior Analyst Quinn Bolton.
Navitas Semiconductor (NVTS) has been recognized in Deloitte's Technology Fast 500™ for the third consecutive year, achieving 571% revenue growth from 2020 to 2023. The growth was driven by strong demand for their advanced gallium nitride (GaN) and silicon carbide (SiC) power components across multiple markets. The company is expanding its presence in mobile fast chargers, AI data centers, and EV markets, with new product introductions including GaNSafe™, Gen-3 'Fast' SiC, and a 48V-focused range in partnership with Infineon. These innovations target applications from 20W to 20MW, addressing a market opportunity exceeding $22B annually.