Welcome to our dedicated page for Tower Semiconductor news (Ticker: TSEM), a resource for investors and traders seeking the latest updates and insights on Tower Semiconductor stock.
Tower Semiconductor Ltd. reports developments tied to its role as a pure-play specialty foundry for high-value analog semiconductor solutions. The company provides technology, development and process platforms for IDMs and fabless companies across consumer, industrial, automotive, mobile, infrastructure, medical, aerospace and defense markets.
Recurring updates cover analog and specialty process platforms including SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS and non-imaging sensors, displays, integrated power management, silicon photonics and MEMS. Company announcements also address customer and partner demonstrations, aerospace and defense foundry applications, AI infrastructure and optical networking technologies, quarterly financial results, conference participation, and the multi-fab manufacturing footprint in Israel, the United States, Japan and Italy.
OpenLight and Tower Semiconductor (NASDAQ/TASE: TSEM) have successfully demonstrated a 400G/lane modulator on Tower's integrated silicon photonics platform PH18DA. The innovation achieved a better than 3.5db extinction ratio using PAM-4 modulation format at 0.6 volts peak-to-peak drive voltage.
The demonstration, built using OpenLight's IP on Tower's existing platform, supports next-generation optical communication architectures from 100G to 400G/lane. Operating across all four CWDM wavelengths, it enables a commercially viable path for DR8 and FR4 next-generation 3.2Tb solutions.
The technology offers significant advantages for datacom and AI applications, including small size, high bandwidth, low drive voltage, and volume manufacturability. The platform also supports heterogeneous integration of modulators, lasers, and optical amplifiers on a single, compact photonic integrated circuit (PIC).
OpenLight and Tower Semiconductor (NASDAQ/TASE: TSEM) have successfully demonstrated a 400G/lane modulator on Tower's PH18DA integrated silicon photonics platform. The demonstration achieved a better than 3.5db extinction ratio using PAM-4 modulation format at 0.6 volts peak-to-peak drive voltage.
Built using OpenLight's IP on Tower's existing platform, which already supports 100G and 200G/lane, this innovation enables a scalable solution for high-speed data transfer in cloud computing, AI and ML applications. Operating across all four CWDM wavelengths, it provides a commercially viable path for DR8 and FR4 next-generation 3.2Tb solutions.
The platform offers heterogeneous integration of 400G modulators, lasers, and optical amplifiers on a single, compact photonic integrated circuit (PIC), providing advantages in size, bandwidth, and low drive voltage while maintaining volume manufacturability.
Tower Semiconductor (NASDAQ/TASE: TSEM) and Innolight have expanded their collaboration to ramp up production of next-generation Silicon Photonics (SiPho) solutions for AI and data centers. The breakthrough technology reduces external optical components and halves the required number of lasers per module, streamlining optical module design and improving cost efficiency.
The partnership focuses on delivering solutions for:
- 100Gbps per lane (400G/800G)
- 200Gbps per lane (1.6T)
- Future 400Gbps per lane (3.2T) optical modules
Tower's new SiPho platform features industry-leading edge coupling efficiency and higher-performance modulators, enabling reduced complexity, improved system reliability, and enhanced supply chain robustness. The collaboration aims to meet the increasing demand for high-speed optical connectivity in AI-driven data centers and cloud infrastructure.
Tower Semiconductor (NASDAQ/TASE: TSEM) announced its participation in the 2025 Applied Power Electronics Conference (APEC) from March 17-19 in Atlanta, Georgia. The company will showcase its advanced power management technology platform, featuring its 300mm 65nm 3.3V-based BCD solution.
The presentation will highlight Tower's power management solutions targeting Automotive, AI, Mobile PMIC, and Data Center power delivery applications. The company's 0.18μm (200mm) and 65nm (300mm) Bipolar-CMOS-DMOS (BCD) platforms support various applications including driver ICs, battery management, and high-voltage gate drivers.
Dr. Mete Erturk, Sr. Director of Power Management Marketing, will present 'Tower Semiconductor's BCD Technology Foundry Offerings: From Automotive to Datacenter Power' on March 19, 2025, at 12:45 PM in room A312.
Tower Semiconductor (TSEM) reported Q4 2024 financial results with revenues of $387 million, showing 5% quarter-over-quarter and 10% year-over-year growth. Q4 net profit reached $55 million with $0.49 EPS. Full-year 2024 revenues totaled $1.44 billion with net profit of $208 million ($1.87 basic EPS).
The company completed its 6-inch fab consolidation, discontinuing legacy 150mm flows in Fab1 and transferring strategic flows to Fab2 200mm factory. For Q1 2025, Tower guides revenues of $358 million (±5%), projecting approximately 10% year-over-year growth. Management expects sequential quarter-over-quarter revenue growth throughout 2025, with acceleration in the second half, supported by increasing production shipments as capacity investments near final customer qualifications.
Tower Semiconductor (NASDAQ/TASE: TSEM) has announced it will release its fourth quarter and fiscal year 2024 earnings report on February 10, 2025. The company will host a conference call on the same day at 10:00 a.m. Eastern Time to discuss the financial results and provide guidance for the first quarter of 2025.
The earnings call will be accessible via webcast through Tower Semiconductor's Investor Relations website. Participants interested in joining the call must complete a pre-registration form to receive dial-in details and a unique PIN. The teleconference recording will remain available for replay for 90 days following the event.
Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry specializing in high-value analog semiconductor solutions, has announced its participation in the 27th Annual Needham Growth Conference. The event will be held on January 14-15, 2025, at the Lotte New York Palace Hotel in New York.
The company will offer one-on-one meetings with investors during the conference. Interested investors can arrange meetings through either the conference organizers or by contacting Tower's investor relations team at towersemi@kcsa.com.
Tower Semiconductor (NASDAQ/TASE: TSEM) has announced its new 300mm 65nm 3.3V-based BCD Power management platform (PML), complementing its existing 5V-based offering currently in high-volume production in Japan and undergoing qualification in Albuquerque, New Mexico.
The platform features LDMOS devices with ultra-low on-resistance and best-in-class figure-of-merit, designed for high power efficiency in mobile devices, AI, and data center applications. The technology includes power devices with wide voltage range and 3.3V gate voltage capability, suitable for PMIC, Audio IC, and high-power voltage regulators for GPU and CPU applications.
Tower Semiconductor (NASDAQ/TASE: TSEM) has received an award from Semtech for Manufacturing Excellence and Partnership in Execution of CY2024 Wafer Shipments. The recognition highlights Tower's successful high-volume production ramp-up of advanced SiGe (Silicon Germanium) integrated circuits during peak demand periods.
The partnership between Tower and Semtech has resulted in significant market share in SiGe products for AI and data center applications, including transimpedance amplifiers, drivers, clock and data recovery, and active copper cable components. These components are important for meeting the increasing demand in AI and data center applications.
Tower Semiconductor (NASDAQ/TASE: TSEM) has announced the release of its new 300mm Silicon Photonics (SiPho) process as a standard foundry offering. This advanced process complements their existing 200mm (PH18) platform, which is currently in high-volume production. The new offering features industry-leading silicon waveguides and advanced low-loss silicon nitride waveguide technology. The larger wafer size improves compatibility with industry-standard OSAT platforms, enabling better integration with electronic components and enhanced efficiency.